Single particle irradiation-resistant super junction VDMOS device

An anti-single event radiation and device technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as VDMOS burnout

Inactive Publication Date: 2012-10-31
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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  • Abstract
  • Description
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Problems solved by technology

Nuclear arrest causes lattice damage to the irradiated material, while electronic arrest causes ionization of the constituent atoms of the irradiated material, generating secondary electrons with hundreds of energies or higher, and along the track of the secondary electrons, a large number of If the current is large eno...

Method used

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  • Single particle irradiation-resistant super junction VDMOS device
  • Single particle irradiation-resistant super junction VDMOS device
  • Single particle irradiation-resistant super junction VDMOS device

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Embodiment Construction

[0021] A super-junction VDMOS device resistant to single-event irradiation, the basic structure of which is shown in Figures 2a to 2c, including a heavily doped semiconductor substrate 2 of the first conductivity type, located on the back of the heavily doped semiconductor substrate 2 of the first conductivity type The metallized drain electrode 1, the lightly doped semiconductor epitaxial layer 3 of the first conductivity type located on the front surface of the heavily doped semiconductor substrate 2 of the first conductivity type; the top two sides of the lightly doped semiconductor epitaxial layer 3 of the first conductivity type respectively have A second conductivity type semiconductor base region 5, each second conductivity type semiconductor base region 5 respectively has a first conductivity type heavily doped semiconductor source region 6 and a second conductivity type heavily doped semiconductor body region 7; Both the heavily doped semiconductor source region 6 of t...

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Abstract

A single particle radiation-resistant super junction VDMOS device belongs to the technical field of power semiconductor devices. According to the invention, in a super junction structure of a traditional super junction VDMOS device, a silicon dioxide dielectric layer (12) is introduced under a second conductive-type doped semiconductor column area (4). Compared with the traditional super junction VDMOS structure, through introducing the silicon dioxide dielectric layer (12), the amount of hole-electron pair generated by the super junction VDMOS device is greatly reduced when the super junction VDMOS device is irradiated by the single particle; the recombination rate is accelerated; a parasitic bipolar transistor can be prevented from avalanche injection-type secondary breakdown; the irradiation resistance ability of the super junction VDMOS device is improved; and the application field thereof is widened.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a super junction VDMOS device, especially a super junction VDMOS device with radiation resistance. Background technique [0002] At present, the application fields of power semiconductor devices are becoming wider and wider, and have become one of the foundations of modern industrial control and national defense equipment. Compared with bipolar transistors, vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOS) have the advantages of fast switching speed, low loss, high input impedance, low driving power, good frequency characteristics, and highly linear transconductance. The most widely used new power device at present. However, when applied in the high-voltage field, VDMOS will have a so-called "silicon limit" bottleneck, that is, the on-resistance increases with the withstand voltage (R on ∝BV 2.5 ) results in a drastic increas...

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Application Information

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IPC IPC(8): H01L29/78
Inventor 任敏赵起越邓光敏张鹏宋询奕李泽宏张金平张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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