Single particle irradiation-resistant super junction VDMOS device

Abstract

A single particle radiation-resistant super junction VDMOS device belongs to the technical field of power semiconductor devices. According to the invention, in a super junction structure of a traditional super junction VDMOS device, a silicon dioxide dielectric layer (12) is introduced under a second conductive-type doped semiconductor column area (4). Compared with the traditional super junction VDMOS structure, through introducing the silicon dioxide dielectric layer (12), the amount of hole-electron pair generated by the super junction VDMOS device is greatly reduced when the super junction VDMOS device is irradiated by the single particle; the recombination rate is accelerated; a parasitic bipolar transistor can be prevented from avalanche injection-type secondary breakdown; the irradiation resistance ability of the super junction VDMOS device is improved; and the application field thereof is widened.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a super junction VDMOS device, especially a super junction VDMOS device with radiation resistance. Background technique [0002] At present, the application fields of power semiconductor devices are becoming wider and wider, and have become one of the foundations of modern industrial control and national defense equipment. Compared with bipolar transistors, vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOS) have the advantages of fast switching speed, low loss, high input impedance, low driving power, good frequency characteristics, and highly linear transconductance. The most widely used new power device at present. However, when applied in the high-voltage field, VDMOS will have a so-called "silicon limit" bottleneck, that is, the on-resistance increases with the withstand voltage (R on ∝BV 2.5 ) results in a drastic increas...

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Problems solved by technology

Nuclear arrest causes lattice damage to the irradiated material, while electronic arrest causes ionization of the constituent atoms of the irradiated material, generating secondary electrons with hundreds of energies or higher, and along the track of the secondary electrons, a large number of If the current is large enough, it may cause the parasitic bipolar transistor in the VDMOS device to turn on. If the drain-source voltage reaches the breakdown voltage BVceo of the parasitic BJT, the collector area of ​​the parasitic BJT will be Avalanche multiplication occurs, forming a positive feedback, which eventually leads to the burning of VDMOS

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