Vertical Power Transistor Based on Arc Drain Plate and Schottky Drain

A power transistor, vertical technology, applied in the field of microelectronics, can solve the problems of inability to realize the reverse blocking function, failure of the current blocking layer, large drain-source leakage current, etc., and achieve easy implementation and continuous increase of reverse breakdown voltage , Improve the effect of reverse breakdown voltage

Active Publication Date: 2019-08-13
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing GaN-based current aperture heterojunction transistors all use ohmic drains. When a very low reverse voltage is applied to the drain of the device, the current blocking layer in the device will fail, resulting in a large drain-source leakage current. Moreover, as the reverse voltage of the drain increases, the gate of the device will also be turned on forwardly, and a large gate current will pass through it, which will eventually cause the device to fail.
Therefore, none of the existing GaN-based current aperture heterojunction transistors can realize the reverse blocking function. Even if the field plate structure is applied to the GaN-based current aperture heterojunction transistor, it will not improve the reverse blocking characteristics of the device. any effect

Method used

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  • Vertical Power Transistor Based on Arc Drain Plate and Schottky Drain
  • Vertical Power Transistor Based on Arc Drain Plate and Schottky Drain
  • Vertical Power Transistor Based on Arc Drain Plate and Schottky Drain

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Embodiment 1: Fabricate a vertical power transistor based on a curved drain field plate and a Schottky drain in which both the passivation layer and the protective layer are SiN.

[0058] Step 1. Epitaxial n on the substrate - type GaN, forming a drift layer 2, such as image 3 a.

[0059] use n - type semiconductor material as the substrate 1, using the metal-organic chemical vapor deposition technique, the epitaxial thickness on the substrate 1 is 3 μm, and the doping concentration is 1×10 15 cm -3 the n - type GaN material to form a drift layer 2, wherein:

[0060] The process conditions used for epitaxy are: the temperature is 950°C, the pressure is 40Torr, and the SiH 4 As the doping source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the flow rate of gallium source is 100 μmol / min.

[0061] Step 2. Epitaxial n-type GaN on the drift layer to form an aperture layer 3, such as image 3 b.

[0062] Using metal-orga...

Embodiment 2

[0099] Embodiment 2: Both the passivation layer and the protective layer are made of SiO 2 Vertical power transistor based on curved drain field plate and Schottky drain.

[0100] Step 1. Epitaxial n on substrate 1 - type GaN, forming a drift layer 2, such as image 3 a.

[0101] At a temperature of 1000°C and a pressure of 45Torr, SiH 4 is the dopant source, the flow rate of hydrogen gas is 4400 sccm, the flow rate of ammonia gas is 4400 sccm, and the flow rate of gallium source is 110 μmol / min. - type semiconductor material as the substrate 1, using the metal-organic chemical vapor deposition technique, the epitaxial thickness on the substrate 1 is 25 μm, and the doping concentration is 1×10 16 cm -3 the n - type GaN material to complete the fabrication of the drift layer 2 .

[0102] The second step. Epitaxial n-type GaN on the drift layer to form the aperture layer 3, such as image 3 b.

[0103] At a temperature of 1000°C and a pressure of 45Torr, SiH 4 As the d...

Embodiment 3

[0132] Embodiment three: making passivation layer is SiO 2 , a vertical power transistor based on a curved drain field plate and a Schottky drain whose protective layer is SiN.

[0133] Step A. Take n - type semiconductor material as substrate 1, using metal-organic chemical vapor deposition technology, using a temperature of 950°C and a pressure of 40Torr, using SiH 4 As the doping source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, the flow rate of gallium source is 100 μmol / min, the epitaxial thickness on the substrate is 50 μm, and the doping concentration is 1×10 18 cm -3 the n - Type GaN material, making drift layer 2, such as image 3 a.

[0134] Step B. The temperature is 950°C, the pressure is 40Torr, and SiH 4 is the dopant source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the flow rate of gallium source is 100 μmol / min. Using metal organic chemical vapor deposition tech...

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Abstract

The invention discloses a vertical power transistor based on an arc leakage field plate and a Schottky drain electrode. The transistor comprises a substrate (1), a drift layer (2), an aperture layer (3), a blocking layer (4), a channel layer (6), a barrier layer (7) and a passivation layer (12). Two sides of the channel layer and the barrier layer are etched with grooves (8). Source electrodes (9) are deposited in the grooves of the two sides. A grid electrode (10) is deposited on the barrier layer between the source electrodes. An aperture (5) is formed between the blocking layers. A Schottky drain electrode (11) is deposited below the substrate. The passivation layer (12) wraps all the areas, except for a bottom of the Schottky drain electrode. Two sides of a back side of the passivation layer are etched with arc steps (13). Metal is deposited on the arc steps so as to form an arc field plate (14). The arc field plate is eclectically connected to the Schottky drain electrode and a lower portion is completely filled with a protective layer (15). In the invention, a reverse breakdown voltage is high, a technology is simple, a conduction resistance is small, a yield is high and the transistor can be used for a power electronics system.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular to a vertical power transistor based on an arc-shaped drain field plate and a Schottky drain, which can be used in a power electronic system. [0002] technical background [0003] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the performance...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/40H01L29/47H01L21/335
CPCH01L29/404H01L29/407H01L29/475H01L29/66462H01L29/7788
Inventor 毛维边照科郝跃李康张进成陈大政杨凌张鹏
Owner XIDIAN UNIV
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