Floating type leakage field plate current aperture device and manufacturing method thereof

Abstract

The invention discloses a floating type drain field plate-based current aperture device. The current aperture device comprises a schottky drain (11), a GaN substrate (1), a GaN drifting layer (2), an aperture layer (3), two symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7) and a gate (10) from the bottom up; two source grooves (8) are etched in the two sides of the barrier layer (7); two sources (9) are deposited in the two source grooves; all regions, except the schottky drain bottom, are covered with a passivation layer (13); a floating type drain field plate (12) is manufactured in the passivation layer on the two sides; the floating type drain field plate consists of multiple mutually-independent floating field plates and a first field plate electrically connected with the schottky drain; and an aperture (5) is formed between the two current blocking layers (4). The current aperture device has high breakdown voltage, simple process, low conduction resistance and high rate of finished products, and can be used for a power electronic system.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor device, in particular to a floating type leakage field plate current aperture device, which can be used in a power electronic system. [0002] technical background [0003] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the performance of traditional first-generat...

AI Technical Summary

Problems solved by technology

However, the existing GaN-based current aperture heterojunction field effect devices all use ohmic drains. When a very low reverse voltage is applied to the device drain, the current blocking layer in the device will fail, resulting in a large drain-source leakage. current, and as the reverse voltage of the drain increases, the gate of the device will also be turned on forward, and a large gate current will pass through, eventually leading to device failure

Therefore, none of the existing GaN-based current aperture heterojunction field effect devices can realize the reverse blocking function. break feature has no effect

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