32results about How to "Constant on-resistance" patented technology

The invention discloses an arc gate field plate current aperture power device, which is mainly used to solve the problem that the field plate structure in the existing vertical power device fails to effectively modulate the electric field distribution in the device. The arc gate field plate current aperture power device comprises a substrate (1), a drift layer (2), an aperture layer (3), a two-step current blocking layer (4), a channel layer (6), a barrier layer (7), and a passivation layer (12). Grooves (8) are formed through etching at the two sides of the channel layer and the barrier layer. Sources (9) are deposited in the grooves respectively. A gate (10) is deposited on the barrier layer between the sources. An aperture (5) is formed between the two steps of the current blocking layer. A drain (11) is deposited under the substrate. The passivation layer wraps all areas except the bottom of the drain. The two sides of the passivation layer are engraved with arc steps (13). Metal is deposited at the arc steps to form arc field plates (14). The arc field plates are electrically connected with the gate. The arc gate field plate current aperture power device of the invention has the advantages of high breakdown voltage, simple process, low on resistance and high yield, and can be used in power electronic systems.

The invention discloses an enhanced grid field plate GaN-based current aperture heterojunction field-effect device and a fabrication method thereof. The enhanced grid field plate GaN-based current aperture heterojunction field-effect device comprises an n<+> type GaN substrate (1), an n<-> type GaN drift layer (2), an n type GaN aperture layer (3), current blocking layers (4), a GaN channel layer (6) and a barrier layer (7), wherein sources (11) are deposited at two sides of the barrier layer, a p<+> type GaN cap layer (8) is arranged on the barrier layer between the sources, steps (9) are etched at two sides of the p<+> type GaN cap layer, a grid (12) is deposited on the p<+> type GaN cap layer, a drain (13) is deposited under the n<+> type GaN substrate, a passivation layer (14) wraps other regions except a bottom part of the drain, stepped field plates (15) are arranged at two sides of the passivation layer and are electrically connected with the grid, and a protection layer (16) is arranged on the passivation layer and the stepped field plates. The enhanced grid field plate GaN-based current aperture heterojunction field-effect device has the advantages of high breakdown voltage, simple process and small conduction resistance, and can be used for a power electronic system.

The invention discloses an arc-shaped source field plate based power electronic device with a vertical structure, which comprises a substrate (1), a drift layer (2), an aperture layer (3), two bilaterally symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7) and a passivation layer (12), and is characterized in that both sides of the channel layer (6) and the barrier layer (7) are etched with a source channel (8), two source electrodes (9) are respectively deposited in the source channels (8) at the two sides, a grid electrode (10) is deposited on the barrier layer between the source electrodes (9), a drain electrode (11) is deposited below a substrate (1), the passivation layer (12) completely covers all regions except for the bottom of the drain electrode (11), two sides of the passivation layer are engraved with arc-shaped source steps (13) respectively, metal is deposited at the arc-shaped source steps so as to form arc-shaped source field plates (14) respectively, and the arc-shaped source field plates are electrically connected with the source electrode. The arc-shaped source field plate based power electronic device with a vertical structure is high in breakdown voltage, simple in process, low in on resistance, high in finished product ratio and capable of being applied to a power electronic system.

The invention discloses a vertical power device based on a gate field plate and a drain field plate. The vertical power device comprises a Schottky drain (11), a substrate (1), a drift layer (2), an aperture layer (3), two symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7) and a grid (10) from bottom to top; source grooves (8) are carved at two sides of the channel layer and the barrier layer; sources (9) are deposited in the source grooves; a passivation layer (12) wraps all areas, except the bottom of the Schottky drain; an aperture (5) is between the current blocking layers; a two-stage step structure is adopted in the two current blocking layers; gate steps and drain steps are respectively carved at the upper part and the back at two sides of the passivation layer; metal is deposited on the steps; therefore, a step gate field plate (13) and a step drain filed plate (14) are formed; and the step gate field plate and the step drain filed plate are electrically connected with the grid and the Schottky drain separately. The vertical power device disclosed by the invention has high two-way breakdown voltage, low conduction resistance and high yield, and can be used for power electronic systems.

The invention discloses a vertical power transistor based on an arc leakage field plate and a Schottky drain electrode. The transistor comprises a substrate (1), a drift layer (2), an aperture layer (3), a blocking layer (4), a channel layer (6), a barrier layer (7) and a passivation layer (12). Two sides of the channel layer and the barrier layer are etched with grooves (8). Source electrodes (9) are deposited in the grooves of the two sides. A grid electrode (10) is deposited on the barrier layer between the source electrodes. An aperture (5) is formed between the blocking layers. A Schottky drain electrode (11) is deposited below the substrate. The passivation layer (12) wraps all the areas, except for a bottom of the Schottky drain electrode. Two sides of a back side of the passivation layer are etched with arc steps (13). Metal is deposited on the arc steps so as to form an arc field plate (14). The arc field plate is eclectically connected to the Schottky drain electrode and a lower portion is completely filled with a protective layer (15). In the invention, a reverse breakdown voltage is high, a technology is simple, a conduction resistance is small, a yield is high and the transistor can be used for a power electronics system.

The invention discloses a composite source field plate-based current aperture heterojunction field effect transistor. The heterojunction field effect transistor comprises a drain (13), a GaN substrate (1), a GaN drifting layer (2), an aperture layer (3), two symmetrical two-stage-step-shaped current blocking layers (4), a channel layer (6), a barrier layer (7), a cap layer (8) and a gate (12) from the bottom up; source grooves (10) are etched in the two sides of the channel layer and the barrier layer; two sources (11) are deposited in the source grooves; two steps (9) are etched in the two sides of the cap layer; all regions, except the drain bottom, are covered with a passivation layer (14); a composite source field plate is manufactured in the passivation layer on the two sides; the composite source field plate consists of multiple mutually-independent floating field plates and a source field plate; the source field plate is electrically connected with the sources; and an aperture (5) is formed between the two current blocking layers (4). The heterojunction field effect transistor has high breakdown voltage, simple process, low conduction resistance and high rate of finished products, and can be used for a power electronic system.

The invention discloses an arc-shaped source field plate based power electronic device with a vertical structure, which comprises a substrate (1), a drift layer (2), an aperture layer (3), two bilaterally symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7) and a passivation layer (12), and is characterized in that both sides of the channel layer (6) and the barrier layer (7) are etched with a source channel (8), two source electrodes (9) are respectively deposited in the source channels (8) at the two sides, a grid electrode (10) is deposited on the barrier layer between the source electrodes (9), a drain electrode (11) is deposited below a substrate (1), the passivation layer (12) completely covers all regions except for the bottom of the drain electrode (11), two sides of the passivation layer are engraved with arc-shaped source steps (13) respectively, metal is deposited at the arc-shaped source steps so as to form arc-shaped source field plates (14) respectively, and the arc-shaped source field plates are electrically connected with the source electrode. The arc-shaped source field plate based power electronic device with a vertical structure is high in breakdown voltage, simple in process, low in on resistance, high in finished product ratio and capable of being applied to a power electronic system.

The invention discloses a vertical power electronic device based on a floating gate-drain composite field plate. The vertical power electronic device comprises a Schottky drain (13), a substrate (1), a drift layer (2), an aperture layer (3), two symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7), a cap layer (8) and a grid (10) from bottom to top; an aperture (5) is formed between the two current blocking layers (4); two sources (12) are deposited at two sides of the barrier layer; two injection areas (11) are below the two sources; a passivation layer (15) wraps all areas, except the bottom of the Schottky drain, wherein a floating gate-drain composite field plate (14) is manufactured in the passivation layer at two sides; the floating gate-drain composite field plate is composed of a gate field plate, a drain field plate, multiple gate floating field plates and multiple drain floating field plates; and a two-stage step structure is adopted in the current blocking layers. The vertical power electronic device disclosed by the invention has high breakdown voltage, simple process, low conduction resistance and high yield, and can be used for power electronic systems.

The invention discloses a vertical power electronic device based on a floating gate-drain composite field plate. The vertical power electronic device comprises a Schottky drain (13), a substrate (1), a drift layer (2), an aperture layer (3), two symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7), a cap layer (8) and a grid (10) from bottom to top; an aperture (5) is formed between the two current blocking layers (4); two sources (12) are deposited at two sides of the barrier layer; two injection areas (11) are below the two sources; a passivation layer (15) wraps all areas, except the bottom of the Schottky drain, wherein a floating gate-drain composite field plate (14) is manufactured in the passivation layer at two sides; the floating gate-drain composite field plate is composed of a gate field plate, a drain field plate, multiple gate floating field plates and multiple drain floating field plates; and a two-stage step structure is adopted in the current blocking layers. The vertical power electronic device disclosed by the invention has high breakdown voltage, simple process, low conduction resistance and high yield, and can be used for power electronic systems.

The invention discloses an analog switch circuit. The analog switch circuit comprises a voltage generation circuit and a first field-effect transistor; the first end of the voltage generation circuitis connected with the voltage input end, the second end of the voltage generation circuit is connected with the grid electrode of the first field-effect transistor, the third end of the voltage generation circuit is connected with the source electrode of the first field-effect transistor, the source electrode of the first field-effect transistor is further connected with the signal input end, andthe drain electrode of the first field-effect transistor is connected with the signal output end; and the voltage generation circuit is used for generating the voltage for enabling the first field-effect transistor to achieve the constant on resistance. The analog switch circuit thoroughly eliminates the influences of the temperature on the on resistance of an analog switch and can enable the on resistance of the analog switch to be constant, and the performances of the analog switch circuit are improved to a great extent.

The invention discloses a constant on-resistance switching circuit and an analog switch. The circuit comprises a high-voltage driving module, a voltage stabilizing module and a main switching tube, the width-to-length ratio of the main switch tube is greater than a preset threshold value; the output end of the high-voltage driving module is electrically connected with the grid electrode of the main switch tube, the input end of the voltage stabilizing module is electrically connected with the grid electrode of the main switch tube, and the output end of the voltage stabilizing module is electrically connected with the substrate of the main switch tube; a first voltage division circuit is arranged between the source electrode of the main switch tube and the substrate, and a second voltage division circuit is arranged between the drain electrode of the main switch tube and the substrate, so that the substrate voltage of the main switch tube is half of the sum of the source electrode voltage and the drain electrode voltage of the main switch tube. A high-level signal is input into the grid electrode of the main switch tube through the high-voltage driving module, the main switch tube is switched on, and the voltage difference between the grid electrode of the main switch tube and the substrate meets the preset voltage threshold value based on the voltage stabilizing module, the first voltage dividing circuit and the second voltage dividing circuit, so that the main switch tube reaches the constant on-resistance, and the linearity of the analog switch is improved.

The invention discloses a source step field plate vertical power transistor comprising a substrate (1), a drift layer (2), an aperture layer (3), a three-step blocking layer (4), a channel layer (6), a barrier layer (7), and a passivation layer (12). Sources (9) are deposited at the two sides of the barrier layer. A gate (10) is deposited on the barrier layer between the sources. A drain (11) is deposited under the substrate. The passivation layer (12) wraps all areas except the bottom of the drain. The two sides of the passivation layer are engraved with steps. Metal is deposited on the steps to form step field plates (13). The step field plates are electrically connected with the sources. The source step field plate vertical power transistor of the invention has the advantages of high breakdown voltage, simple process, low on resistance and high yield, and can be used in power electronic systems.

The invention discloses an arc gate-drain composite field plate-based current aperture heterojunction device. The heterojunction device comprises a schottky drain (13), a substrate (1), a drifting layer (2), an aperture layer (3), two two-stage-step-structured current blocking layers (4), an aperture (5), a channel layer (6), a barrier layer (7), a cap layer (8) and a gate (10) from the bottom up; stages (9) are etched on the two sides of the cap layer; source grooves (11) are etched in the two sides of the channel layer and the barrier layer; sources (12) are deposited in the source grooves (11); all regions, except the schottky drain bottom, are covered with a passivation layer (14); arc-shaped steps are etched on the upper part and the back surface of the left and right sides of the passivation layer respectively; metal is deposited on the arc-shaped stages to form an arc-shaped gate field plate (15) and an arc-shaped drain field plate (16); and the arc-shaped gate field plate and the arc-shaped drain field plate are electrically connected with the gate and the schottky drain respectively. The heterojunction device has high bidirectional blocking function, low conduction resistance and high rate of finished products, and can be used for a power electronic system.

The invention discloses a floating source field plate and floating drain field plate-based vertical type heterojunction field effect device. The heterojunction field effect device comprises a schottky drain (11), a substrate (1), a drifting layer (2), an aperture layer (3), two symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7) and a gate (10) from the bottom up; an aperture (5) is formed between the two current blocking layers (4); two sources (9) are deposited on the two sides of the barrier layer; injection regions (8) are arranged below the sources; all regions, except the schottky drain bottom, are covered with a passivation layer (14); the device is characterized in that a floating drain field plate (12) is manufactured on the inner lower part of the passivation layer on the two sides, and a floating source field plate (13) is manufactured on the upper part; and the current blocking layers adopt a two-stage-step structure. The heterojunction field effect device has the advantages of high breakdown voltage, simple process, low conduction resistance and high rate of finished products, and can be used for a power electronic system.

The invention discloses a current aperture hetero-junction transistor based on a drain field plate, and a manufacturing method thereof. The current aperture hetero-junction transistor comprises a substrate (1), a drift layer (2), an aperture layer (3), current blocking layers (4), a channel layer (6) and a barrier layer (7); sources (11) are deposited at two sides of the barrier layer; a cap layer (8) extends on the barrier layer between the sources; steps (9) are carved at two sides of the cap layer; a grid (12) is deposited on the cap layer; an aperture (5) is formed between the two current blocking layers; a Schottky drain (13) is deposited below the substrate; a passivation layer (14) wraps all areas, except the bottom of the Schottky drain; steps are carved at two sides of the back of the passivation layer; metal is deposited on the steps; therefore, a slant field plate (15) is formed; the slant field plate is electrically connected with the Schottky drain; and a protective layer (16) fully fills the bottom of the slant field plate. The current aperture hetero-junction transistor disclosed by the invention has high reverse breakdown voltage, simple process, low conduction resistance and high yield, and can be used for power electronic systems.

The invention provides a broadband sampling holding circuit used for a successive approximation type analog-to-digital converter front end. The objective of the invention is to eliminate the defects of an existing sampling holding circuit. The broadband sampling holding circuit is composed of a first-stage voltage buffer, a clock processing unit, a sampling switched capacitor sub circuit and a second-stage voltage buffer; the output end of the first-stage voltage buffer is connected with the input end of the sampling switched capacitor sub circuit controlled by a voltage bootstrapping unit circuit; a signal output end of the sampling switched capacitor sub circuit is connected with a signal input end of the second-stage voltage buffer; and the clock processing unit provides clock signals for the first-stage voltage buffer and the sampling switched capacitor sub circuit respectively. According to the broadband sampling holding circuit of the invention, the broadband-reinforced and clock-controlled first-stage voltage buffer and the second-stage voltage buffer of a PMOS source follower which is used for performing replication unit biasing on N wells are adopted, and therefore, the bandwidth of input sampling signals can be improved, and at the same time, a requirement for signal linearity can be satisfied with extremely low power consumption.

The invention discloses a subsection gate field plate vertical type current aperture power device. The current aperture power device comprises a drain (11), a substrate (1), a drifting layer (2), an aperture layer (3), two symmetrical two-stage-step-shaped current blocking layers (4), a channel layer (6), a barrier layer (7) and a gate (10) from the bottom up; two sources (9) are deposited on the two sides of the barrier layer (7); two injection regions (8) are formed below the two sources (9) through ion implantation; all regions, except the drain bottom, are covered with a passivation layer (13); a subsection gate field plate (12) is manufactured in the passivation layer on the two sides separately; the subsection gate field plate consists of multiple mutually-independent floating field plates and a gate field plate; the gate field plate is electrically connected with the gate; and an aperture (5) is formed between the two current blocking layers (4). The current aperture power device has high breakdown voltage, simple process, low conduction resistance and high rate of finished products, and can be used for a power electronic system.

The invention discloses a floating type drain field plate-based current aperture device. The current aperture device comprises a schottky drain (11), a GaN substrate (1), a GaN drifting layer (2), an aperture layer (3), two symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7) and a gate (10) from the bottom up; two source grooves (8) are etched in the two sides of the barrier layer (7); two sources (9) are deposited in the two source grooves; all regions, except the schottky drain bottom, are covered with a passivation layer (13); a floating type drain field plate (12) is manufactured in the passivation layer on the two sides; the floating type drain field plate consists of multiple mutually-independent floating field plates and a first field plate electrically connected with the schottky drain; and an aperture (5) is formed between the two current blocking layers (4). The current aperture device has high breakdown voltage, simple process, low conduction resistance and high rate of finished products, and can be used for a power electronic system.

The invention discloses an arc gate field plate current aperture power device, which is mainly used to solve the problem that the field plate structure in the existing vertical power device fails to effectively modulate the electric field distribution in the device. The arc gate field plate current aperture power device comprises a substrate (1), a drift layer (2), an aperture layer (3), a two-step current blocking layer (4), a channel layer (6), a barrier layer (7), and a passivation layer (12). Grooves (8) are formed through etching at the two sides of the channel layer and the barrier layer. Sources (9) are deposited in the grooves respectively. A gate (10) is deposited on the barrier layer between the sources. An aperture (5) is formed between the two steps of the current blocking layer. A drain (11) is deposited under the substrate. The passivation layer wraps all areas except the bottom of the drain. The two sides of the passivation layer are engraved with arc steps (13). Metal is deposited at the arc steps to form arc field plates (14). The arc field plates are electrically connected with the gate. The arc gate field plate current aperture power device of the invention has the advantages of high breakdown voltage, simple process, low on resistance and high yield, and can be used in power electronic systems.

The invention discloses an analog switch circuit. The analog switch circuit includes: a voltage generating circuit and a first field effect transistor; wherein, the first end of the voltage generating circuit is connected to a voltage input end, and the voltage generating circuit The second terminal is connected to the gate of the first field effect transistor, the third terminal of the voltage generating circuit is connected to the source of the first field effect transistor, and the source of the first field effect transistor is also connected to the source of the first field effect transistor. The signal input terminal is connected, and the drain of the first field effect transistor is connected to the signal output terminal; the voltage generating circuit is used to generate a voltage that makes the first field effect transistor have a constant on-resistance. The analog switch circuit completely eliminates the influence of temperature on the on-resistance of the analog switch, can make the on-resistance of the analog switch constant, and greatly improves the performance of the analog switch circuit.

The invention discloses a vertical power transistor based on an arc leakage field plate and a Schottky drain electrode. The transistor comprises a substrate (1), a drift layer (2), an aperture layer (3), a blocking layer (4), a channel layer (6), a barrier layer (7) and a passivation layer (12). Two sides of the channel layer and the barrier layer are etched with grooves (8). Source electrodes (9) are deposited in the grooves of the two sides. A grid electrode (10) is deposited on the barrier layer between the source electrodes. An aperture (5) is formed between the blocking layers. A Schottky drain electrode (11) is deposited below the substrate. The passivation layer (12) wraps all the areas, except for a bottom of the Schottky drain electrode. Two sides of a back side of the passivation layer are etched with arc steps (13). Metal is deposited on the arc steps so as to form an arc field plate (14). The arc field plate is eclectically connected to the Schottky drain electrode and a lower portion is completely filled with a protective layer (15). In the invention, a reverse breakdown voltage is high, a technology is simple, a conduction resistance is small, a yield is high and the transistor can be used for a power electronics system.

The invention discloses a source-drain composite field plate vertical type power electronic device. The vertical type power electronic device comprises a schottky drain (11), a substrate (1), a drifting layer (2), an aperture layer (3), two symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7) and a gate (10) from the bottom up; two sources (9) are deposited on the two sides of the barrier layer; two injection regions (8) are arranged below the two sources; all regions, except the schottky drain bottom, are covered with a passivation layer (12); an aperture (5) is formed between the two current blocking layers; the current blocking layers adopt a two-stage-step structure; an integral number of source steps and drain steps are etched on the upper part and the back surface of the left and right sides of the passivation layer respectively; metal is deposited on the steps to form a source field plate (13) and a drain field plate (14) respectively; and the source field plate is electrically connected with the sources while the drain field plate is electrically connected with the drain. The vertical type power electronic device has high bidirectional blocking function, low conduction resistance and high rate of finished products, and can be used for a power electronic system.

The invention discloses a vertical power device based on a gate field plate and a drain field plate. The vertical power device comprises a Schottky drain (11), a substrate (1), a drift layer (2), an aperture layer (3), two symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7) and a grid (10) from bottom to top; source grooves (8) are carved at two sides of the channel layer and the barrier layer; sources (9) are deposited in the source grooves; a passivation layer (12) wraps all areas, except the bottom of the Schottky drain; an aperture (5) is between the current blocking layers; a two-stage step structure is adopted in the two current blocking layers; gate steps and drain steps are respectively carved at the upper part and the back at two sides of the passivation layer; metal is deposited on the steps; therefore, a step gate field plate (13) and a step drain filed plate (14) are formed; and the step gate field plate and the step drain filed plate are electrically connected with the grid and the Schottky drain separately. The vertical power device disclosed by the invention has high two-way breakdown voltage, low conduction resistance and high yield, and can be used for power electronic systems.

The invention discloses an enhanced grid field plate GaN-based current aperture heterojunction field-effect device and a fabrication method thereof. The enhanced grid field plate GaN-based current aperture heterojunction field-effect device comprises an n<+> type GaN substrate (1), an n<-> type GaN drift layer (2), an n type GaN aperture layer (3), current blocking layers (4), a GaN channel layer (6) and a barrier layer (7), wherein sources (11) are deposited at two sides of the barrier layer, a p<+> type GaN cap layer (8) is arranged on the barrier layer between the sources, steps (9) are etched at two sides of the p<+> type GaN cap layer, a grid (12) is deposited on the p<+> type GaN cap layer, a drain (13) is deposited under the n<+> type GaN substrate, a passivation layer (14) wraps other regions except a bottom part of the drain, stepped field plates (15) are arranged at two sides of the passivation layer and are electrically connected with the grid, and a protection layer (16) is arranged on the passivation layer and the stepped field plates. The enhanced grid field plate GaN-based current aperture heterojunction field-effect device has the advantages of high breakdown voltage, simple process and small conduction resistance, and can be used for a power electronic system.