Arc-shaped source field plate based power electronic device with vertical structure

A power electronic device, vertical structure technology, applied in the field of microelectronics, can solve the problems of no improvement in device performance, inability to effectively modulate the electric field distribution of the device, etc. Effect

Active Publication Date: 2017-09-05
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, up to now, there is still no precedent of the field plate structure being successfully applied to GaN-based current aperture heterojunction field-effect devices at home and abroad. This is mainly due to the inherent defects in the structure of GaN-based current aperture heterojunction field-effect devices. As a result, the strongest electric field peak in the drift layer of the device is located near the interface between the barrier layer and the aperture layer, and the electric field peak is far away from the surfaces on both sides of the drift layer. Therefore, the field plate structure can hardly play the role of effectively modulating the electric field distribution in the device, even in GaN-based The field plate structure is used in the current aperture heterojunction field effect device, and there is almost no improvement in device performance

Method used

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  • Arc-shaped source field plate based power electronic device with vertical structure
  • Arc-shaped source field plate based power electronic device with vertical structure
  • Arc-shaped source field plate based power electronic device with vertical structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057]Embodiment 1: Fabricate a vertical structure power electronic device based on an arc-shaped source field plate in which both the passivation layer and the protective layer are SiN.

[0058] Step 1. Epitaxial n on the substrate - type GaN, forming a drift layer 2, such as image 3 a.

[0059] use n + Type GaN is used as the substrate 1, and the epitaxial thickness is 3 μm and the doping concentration is 1×10 on the substrate 1 by metal organic chemical vapor deposition technology. 15 cm -3 the n - type GaN material to form a drift layer 2, wherein:

[0060] The process conditions used for epitaxy are: the temperature is 950°C, the pressure is 40Torr, and the SiH 4 As the doping source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the flow rate of gallium source is 100 μmol / min.

[0061] Step 2. Epitaxial n-type GaN on the drift layer to form an aperture layer 3, such as image 3 b.

[0062] Using the metal-organic che...

Embodiment 2

[0102] Embodiment 2: Both the passivation layer and the protective layer are made of SiO 2 Vertically structured power electronic devices based on arc-shaped source-field plates.

[0103] Step 1. Epitaxial n on the substrate - type GaN, forming a drift layer 2, such as image 3 a.

[0104]At a temperature of 1000°C and a pressure of 45Torr, SiH 4 is the dopant source, the flow rate of hydrogen gas is 4400 sccm, the flow rate of ammonia gas is 4400 sccm, and the flow rate of gallium source is 110 μmol / min. + Type GaN is used as the substrate 1, and the epitaxial thickness is 10 μm and the doping concentration is 4×10 16 cm -3 the n - type GaN material to complete the fabrication of the drift layer 2 .

[0105] The second step. Epitaxial n-type GaN on the drift layer to form the aperture layer 3, such as image 3 b.

[0106] At a temperature of 1000°C, a pressure of 45Torr, and a dopant source of SiH 4 , the flow rate of hydrogen gas is 4400 sccm, the flow rate of ammo...

Embodiment 3

[0137] Embodiment three: making passivation layer is SiO 2 , a vertical structure power electronic device based on a curved source field plate with a protective layer of SiN.

[0138] Step A. Choose n + Type GaN is used as the substrate 1, the temperature is 950°C, the pressure is 40Torr, and SiH 4 As the doping source, the flow rate of hydrogen gas is 4000sccm, the flow rate of ammonia gas is 4000sccm, and the flow rate of gallium source is 100μmol / min. Using metal organic chemical vapor deposition technology, the epitaxial thickness on the substrate is 50μm, and the doping concentration is 1 ×10 18 cm -3 the n - Type GaN material, making drift layer 2, such as image 3 a.

[0139] Step B. The temperature is 950°C, the pressure is 40Torr, and SiH 4 is the dopant source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the flow rate of gallium source is 100 μmol / min. Using metal organic chemical vapor deposition technology, the ...

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Abstract

The invention discloses an arc-shaped source field plate based power electronic device with a vertical structure, which comprises a substrate (1), a drift layer (2), an aperture layer (3), two bilaterally symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7) and a passivation layer (12), and is characterized in that both sides of the channel layer (6) and the barrier layer (7) are etched with a source channel (8), two source electrodes (9) are respectively deposited in the source channels (8) at the two sides, a grid electrode (10) is deposited on the barrier layer between the source electrodes (9), a drain electrode (11) is deposited below a substrate (1), the passivation layer (12) completely covers all regions except for the bottom of the drain electrode (11), two sides of the passivation layer are engraved with arc-shaped source steps (13) respectively, metal is deposited at the arc-shaped source steps so as to form arc-shaped source field plates (14) respectively, and the arc-shaped source field plates are electrically connected with the source electrode. The arc-shaped source field plate based power electronic device with a vertical structure is high in breakdown voltage, simple in process, low in on resistance, high in finished product ratio and capable of being applied to a power electronic system.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular to a power electronic device with a vertical structure based on an arc-shaped source field plate, which can be used in a power electronic system. [0002] technical background [0003] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the perform...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/06H01L29/40H01L21/335H01L21/28
CPCH01L21/28H01L29/0607H01L29/0684H01L29/404H01L29/66462H01L29/7788
Inventor 毛维石朋毫郝跃薛军帅
Owner XIDIAN UNIV
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