Arc gate field plate current aperture power device

Abstract

The invention discloses an arc gate field plate current aperture power device, which is mainly used to solve the problem that the field plate structure in the existing vertical power device fails to effectively modulate the electric field distribution in the device. The arc gate field plate current aperture power device comprises a substrate (1), a drift layer (2), an aperture layer (3), a two-step current blocking layer (4), a channel layer (6), a barrier layer (7), and a passivation layer (12). Grooves (8) are formed through etching at the two sides of the channel layer and the barrier layer. Sources (9) are deposited in the grooves respectively. A gate (10) is deposited on the barrier layer between the sources. An aperture (5) is formed between the two steps of the current blocking layer. A drain (11) is deposited under the substrate. The passivation layer wraps all areas except the bottom of the drain. The two sides of the passivation layer are engraved with arc steps (13). Metal is deposited at the arc steps to form arc field plates (14). The arc field plates are electrically connected with the gate. The arc gate field plate current aperture power device of the invention has the advantages of high breakdown voltage, simple process, low on resistance and high yield, and can be used in power electronic systems.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor device, in particular to a current aperture power device of an arc grid field plate, which can be used in a power electronic system. [0002] technical background [0003] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the performance of traditional first-generati...

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Problems solved by technology

However, up to now, there is still no precedent of the field plate structure being successfully applied to GaN-based current aperture heterojunction field-effect devices at home and abroad. This is mainly due to the inherent defects in the structure of GaN-based current aperture heterojunction field-effect devices. As a result, the strongest electric field peak in the drift layer of the device is located near the interface between the barrier layer and the aperture layer, and the electric field peak is far away from the surfaces on both sides of the drift layer. Therefore, the field plate structure can hardly play the role of effectively modulating the electric field distribution in the device, even in GaN-based The field plate structure is used in the current aperture heterojunction field effect device, and there is almost no improvement in device performance

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