Enhanced grid field plate gan-based current aperture heterojunction field effect device and fabrication method thereof
An enhanced, base current technology, applied in the field of microelectronics, can solve the problems that the field plate structure cannot effectively modulate the electric field distribution in the device, and the device performance is not improved. effect achieved
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Embodiment 1
[0062] Embodiment 1: Fabricate a current aperture heterojunction field effect device in which both the passivation layer and the protective layer are SiN, and the step number of the step field plate is 1.
[0063] Step 1. Epitaxial n on the substrate - type GaN, forming n - type GaN drift layer 2, such as image 3 a.
[0064] Using metal-organic chemical vapor deposition techniques, the n + Type GaN substrate 1 with an epitaxial thickness of 100 μm and a doping concentration of 1×10 15 cm -3 the n - type GaN drift layer 2 .
[0065] The process conditions used for epitaxy are: the temperature is 950°C, the pressure is 40Torr, and the SiH 4 As the doping source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the flow rate of gallium source is 100 μmol / min.
[0066] Step 2. Epitaxial n-type GaN on the drift layer to form an n-type GaN aperture layer 3, such as image 3 b.
[0067] Using metal-organic chemical vapor deposition...
Embodiment 2
[0118] Embodiment 2: Both the passivation layer and the protective layer are made of SiO 2 , and the current aperture heterojunction field effect device with the step number of the step field plate being 2.
[0119] Step 1. Epitaxial n on the substrate - type GaN, forming n - type GaN drift layer 2, such as image 3 a.
[0120] At a temperature of 1000°C and a pressure of 45Torr, SiH 4 As the dopant source, the flow rate of hydrogen gas is 4400sccm, the flow rate of ammonia gas is 4400sccm, and the flow rate of gallium source is 110μmol / min, using metal organic chemical vapor deposition technology, at n + The epitaxial thickness on the GaN substrate 1 is 20 μm, and the doping concentration is 1×10 16 cm -3 the n - type GaN material, complete n - Type GaN drift layer 2 fabrication.
[0121] The second step. Epitaxial n-type GaN on the drift layer to form an n-type GaN aperture layer 3, such as image 3 b.
[0122] At a temperature of 1000°C and a pressure of 45Torr, ...
Embodiment 3
[0164] Embodiment three: making passivation layer is SiO 2 , the protective layer is SiN, and the number of steps of the step field plate is 4 current aperture heterojunction field effect devices.
[0165] Step A. The temperature is 950°C, the pressure is 40Torr, and SiH 4As the doping source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the process conditions of gallium source flow rate are 100 μmol / min, using metal organic chemical vapor deposition technology, at n + Type GaN substrate 1 with an epitaxial thickness of 3 μm and a doping concentration of 1×10 18 cm -3 the n - type GaN drift layer 2, such as image 3 a.
[0166] Step B. The temperature is 950°C, the pressure is 40Torr, and SiH 4 As the doping source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the process conditions of gallium source flow rate are 100 μmol / min, using metal organic chemical vapor deposition technol...
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