74results about How to "Avoid process complications" patented technology

The invention discloses an insulated gate type source-drain composite field plate transistor with high electron mobility and a fabrication method thereof. The transistor comprises a substrate, a transition layer, a barrier layer, a source electrode, a drain electrode, an insulated gate electrode, a passivation layer, a source field plate, a drain field plate and a protection layer from bottom to top,; the source field plate is electrically connected with the source electrode, the drain field plate is electrically connected with the drain electrode, wherein, an insulation medium layer is deposited on the upper part of the source electrode, the upper part of the drain electrode as well as the upper part of the barrier layer between the source electrode and the drain electrode; and n floating field plates are deposited on the passivation layer arranged between the source field plate and the drain field plate. All the floating field plates have the same size and are mutually independent in floating state, and the floating field plates are equidistantly distributed between the source field plate and the drain field plate. The n floating plates, the source field plate and the drain plate are completed on the passivation layer by one-time process. The transistor has the advantages of simple process, strong reliability and high breakdown voltage, and the transistor and the fabrication method can be used for fabricating high power devices based on a wide band gap compound semiconductor material heterojunction.

The invention discloses a heterojunction field effect transistor of a composite source field plate based on medium modulation. The heterojunction field effect transistor of the composite source filed plate based on the medium modulation is mainly used for solving the problem that the process for realizing high breakdown voltage in the existing field plate technology is complex. The heterojunction field effect transistor comprises a substrate (1), a transitional layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), a table board (6), a passivation layer (9) and a protective layer (13), wherein a gate slot (7) is etched in the barrier layer between the source electrode and the drain electrode; a grid electrode (8) is deposited in the grid slot (7); a groove (10) is etched in the passivation layer (9) between the grid electrode and the drain electrode; a high dielectric constant medium (11) is completely filled in the groove (10); a source field plate (12) is deposited between the passivation layer (9) and the protective layer (13); the source field plate is electrically connected with a source electrode; and the source field plate (12) and the high dielectric constant medium (11) form a composite source field plate. The heterojunction field effect transistor of the composite source filed plate based on the medium modulation has the advantages of a simple manufacturing process, high breakthrough voltage, high field plate efficiency, high reliability and high yield.

The invention discloses a groove-gate type source field plate device with high electron mobility and a fabrication method thereof. The device comprises, from bottom to top, a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), a groove gate (7), a passivation layer (8), a source field plate (9) and a protection layer (11); the groove gate (7) is arranged in a groove (6) of the barrier layer, the source field plate (9) is electrically connected with the source electrode (4), wherein, n floating field plates (10) are deposited on the passivation layer (8), the floating field plates and the source field plate are positioned at the same level. The floating field plate have the same size and are mutually independent, and the spacing between two adjacent floating field plates successively increases based on the number of the floating field plates arranged along the direction from the source field plate to the drain electrode. The n floating field plates and the source field plate are completed on the passivation layer by one time process. The device has the advantages of simple process, high output power and good reliability, and the device and the method can be used for fabricating microwave power devices based on a compound semiconductor material heterojunction.

The invention discloses an arc gate field plate current aperture power device, which is mainly used to solve the problem that the field plate structure in the existing vertical power device fails to effectively modulate the electric field distribution in the device. The arc gate field plate current aperture power device comprises a substrate (1), a drift layer (2), an aperture layer (3), a two-step current blocking layer (4), a channel layer (6), a barrier layer (7), and a passivation layer (12). Grooves (8) are formed through etching at the two sides of the channel layer and the barrier layer. Sources (9) are deposited in the grooves respectively. A gate (10) is deposited on the barrier layer between the sources. An aperture (5) is formed between the two steps of the current blocking layer. A drain (11) is deposited under the substrate. The passivation layer wraps all areas except the bottom of the drain. The two sides of the passivation layer are engraved with arc steps (13). Metal is deposited at the arc steps to form arc field plates (14). The arc field plates are electrically connected with the gate. The arc gate field plate current aperture power device of the invention has the advantages of high breakdown voltage, simple process, low on resistance and high yield, and can be used in power electronic systems.

The invention discloses an infrared detector array and a manufacturing method of the infrared detector array. The detector array comprises an n-type InSb substrate (1) and a passivation layer (7), t*t tabletops (2) are etched on the n-type InSb substrate (1), wherein t is an integer and is greater than or equal to one; an anode (5) is deposited on each tabletop (2), and an cathode (6) shaped like the Chinese character 'hui' is deposited on the upper portion of the edge of the n-type InSb substrate (1); the upper portion of the n-type InSb substrate (1) and the side face of each tabletop (2) are each provided with a protection layer (4) in a deposited mode; m*m identical p-type conical doping areas (3) are arranged in the positions, under each tabletop (2), of the n-type InSb substrate (1) to from a p-type conical doping area array, and one pn junction is formed between each p-type conical doping area (3) and the n-type InSb substrate (1), wherein m is an integer and is greater than or equal to one. The infrared detector array has the advantages of being simple in process, high in quantum efficiency and low in crosstalk, and can be used for the fields of infrared investigation and infrared medical treatment.

The invention discloses a GaN-based T-shaped source field plate power device and a manufacture method thereof. The GaN-based T-shaped source field plate power device and the manufacture method thereof mainly solve the problem that processes are complex when an existing field plate technology is used to achieve high breakdown voltage. The GaN-based T-shaped source field plate power device comprises a substrate (1), a transition layer (2), a barrier layer (3), an insulation medium layer (7), a passive layer (9) and a protection layer (12), wherein a source electrode (4) and a drain electrode (5) are deposited on the barrier layer (3), a table board (6) is formed on the side face of the barrier layer (3), a grid electrode (8) is deposited on the insulation medium layer (7), a groove (10) is engraved in the passive layer (9), a T-shaped source field plate (11) is deposited between the passive layer (9) and the protection layer (12), the groove (10) is completely filled with the lower end of the T-shaped source field plate (11), and the T-shaped source field plate (11) is electrically connected with the source electrode (14). The GaN-based T-shaped source field plate power device and the manufacture method thereof have the advantages of being simple in process, high in breakdown voltage, high in reliability and high in rate of finished products.

The invention discloses an enhanced grid field plate GaN-based current aperture heterojunction field-effect device and a fabrication method thereof. The enhanced grid field plate GaN-based current aperture heterojunction field-effect device comprises an n<+> type GaN substrate (1), an n<-> type GaN drift layer (2), an n type GaN aperture layer (3), current blocking layers (4), a GaN channel layer (6) and a barrier layer (7), wherein sources (11) are deposited at two sides of the barrier layer, a p<+> type GaN cap layer (8) is arranged on the barrier layer between the sources, steps (9) are etched at two sides of the p<+> type GaN cap layer, a grid (12) is deposited on the p<+> type GaN cap layer, a drain (13) is deposited under the n<+> type GaN substrate, a passivation layer (14) wraps other regions except a bottom part of the drain, stepped field plates (15) are arranged at two sides of the passivation layer and are electrically connected with the grid, and a protection layer (16) is arranged on the passivation layer and the stepped field plates. The enhanced grid field plate GaN-based current aperture heterojunction field-effect device has the advantages of high breakdown voltage, simple process and small conduction resistance, and can be used for a power electronic system.

The invention discloses an arc-shaped source field plate based power electronic device with a vertical structure, which comprises a substrate (1), a drift layer (2), an aperture layer (3), two bilaterally symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7) and a passivation layer (12), and is characterized in that both sides of the channel layer (6) and the barrier layer (7) are etched with a source channel (8), two source electrodes (9) are respectively deposited in the source channels (8) at the two sides, a grid electrode (10) is deposited on the barrier layer between the source electrodes (9), a drain electrode (11) is deposited below a substrate (1), the passivation layer (12) completely covers all regions except for the bottom of the drain electrode (11), two sides of the passivation layer are engraved with arc-shaped source steps (13) respectively, metal is deposited at the arc-shaped source steps so as to form arc-shaped source field plates (14) respectively, and the arc-shaped source field plates are electrically connected with the source electrode. The arc-shaped source field plate based power electronic device with a vertical structure is high in breakdown voltage, simple in process, low in on resistance, high in finished product ratio and capable of being applied to a power electronic system.

The invention discloses a vertical power device based on a gate field plate and a drain field plate. The vertical power device comprises a Schottky drain (11), a substrate (1), a drift layer (2), an aperture layer (3), two symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7) and a grid (10) from bottom to top; source grooves (8) are carved at two sides of the channel layer and the barrier layer; sources (9) are deposited in the source grooves; a passivation layer (12) wraps all areas, except the bottom of the Schottky drain; an aperture (5) is between the current blocking layers; a two-stage step structure is adopted in the two current blocking layers; gate steps and drain steps are respectively carved at the upper part and the back at two sides of the passivation layer; metal is deposited on the steps; therefore, a step gate field plate (13) and a step drain filed plate (14) are formed; and the step gate field plate and the step drain filed plate are electrically connected with the grid and the Schottky drain separately. The vertical power device disclosed by the invention has high two-way breakdown voltage, low conduction resistance and high yield, and can be used for power electronic systems.

The invention discloses a vertical power transistor based on an arc leakage field plate and a Schottky drain electrode. The transistor comprises a substrate (1), a drift layer (2), an aperture layer (3), a blocking layer (4), a channel layer (6), a barrier layer (7) and a passivation layer (12). Two sides of the channel layer and the barrier layer are etched with grooves (8). Source electrodes (9) are deposited in the grooves of the two sides. A grid electrode (10) is deposited on the barrier layer between the source electrodes. An aperture (5) is formed between the blocking layers. A Schottky drain electrode (11) is deposited below the substrate. The passivation layer (12) wraps all the areas, except for a bottom of the Schottky drain electrode. Two sides of a back side of the passivation layer are etched with arc steps (13). Metal is deposited on the arc steps so as to form an arc field plate (14). The arc field plate is eclectically connected to the Schottky drain electrode and a lower portion is completely filled with a protective layer (15). In the invention, a reverse breakdown voltage is high, a technology is simple, a conduction resistance is small, a yield is high and the transistor can be used for a power electronics system.

The invention discloses an insulated gate type source field plate heterojunction field effect transistor. The transistor comprises, from bottom to top, a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), an insulating medium layer (6), an insulated gate electrode (7), a passivation layer (8), a source field plate (9) and a protection layer (11); the source field plate (9) is arranged on the passivation layer (8) and is electrically connected with the source electrode (4), wherein, n floating field plates (10) are deposited on the passivation layer (8) along the direction from the source field plate to the drain electrode. The floating field plates have the same size and are mutually independent, and the spacing between two adjacent floating field plates successively increases based on the number of the floating field plates arranged along the direction from the source field plate to the drain electrode. The n floating field plates and the source field plate are completed on the passivation layer by one time process. The transistor has the advantages of simple process, high breakdown voltage and good reliability, and can be used for fabricating high-frequency high-power devices based on an III-V group compound semiconductor material heterojunction structure.

The invention discloses a gamma gate heterojunction field effect transistor and a fabrication method thereof. The transistor comprises, from bottom to top, a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), a passivation layer (6), a gamma gate (8) and a protection layer (10); a groove (7) is opened on the passivation layer (6), wherein, nfloating field plates (9) are deposited on the passivation layer (6) arranged between the gamma gate (8) and drain electrode (5) to form a composite gate field plate structure (n is not less than 1).All the floating field plates have the same size and are mutually independent, and the distance between two adjacent floating field plates increases based on the number of the floating field plates arranged along the direction from the gamma gate to the drain electrode. The n floating field plates are in a floating state and completed together with the gamma gate by one-time process. The transistor has the advantages of simple process, good reliability, strong stability, good frequency characteristic and high output power, and the transistor and the fabrication method can be used for fabricating high-frequency high power devices based on III-V group compound semiconductor heterojunction structure.

The invention discloses a groove-gate type source-drain composite field plate heterojunction field effect transistor and a fabrication method thereof. The transistor comprises, from bottom to top, a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), a groove gate (7), a passivation layer (8), a source field plate (9), a drain field plate (11) and a protection layer (12); the drain field plate is electrically connected with the drain electrode, the source field plate is electrically connected with the source electrode, wherein, a groove (6) is opened on the barrier layer (3); and n floating field plates (10) are deposited on the passivation layer arranged between the source field plate and drain field plate. All the floating field plate have the same size and are in a floating state, and the floating field plates are equidistantly distributed between the source field plate and the drain field plate. The n floating field plates, the source field plate and the drain field plate are completed on the passivation layer by one-time process. The transistor has the advantages of high yield, good reliability and high output power, and the transistor and the fabrication method can be used for fabricating power devices based on a wide band gap compound semiconductor material heterojunction.

The invention discloses a composite source field plate-based current aperture heterojunction field effect transistor. The heterojunction field effect transistor comprises a drain (13), a GaN substrate (1), a GaN drifting layer (2), an aperture layer (3), two symmetrical two-stage-step-shaped current blocking layers (4), a channel layer (6), a barrier layer (7), a cap layer (8) and a gate (12) from the bottom up; source grooves (10) are etched in the two sides of the channel layer and the barrier layer; two sources (11) are deposited in the source grooves; two steps (9) are etched in the two sides of the cap layer; all regions, except the drain bottom, are covered with a passivation layer (14); a composite source field plate is manufactured in the passivation layer on the two sides; the composite source field plate consists of multiple mutually-independent floating field plates and a source field plate; the source field plate is electrically connected with the sources; and an aperture (5) is formed between the two current blocking layers (4). The heterojunction field effect transistor has high breakdown voltage, simple process, low conduction resistance and high rate of finished products, and can be used for a power electronic system.

The invention provides an integrated method of a carbon nano tube heat dissipation structure and an electronic device and belongs to the technical field of microelectronic technology. The integrated method of the carbon nano tube heat dissipation structure and the electronic device is simple and highly-effective. A carbon nano tube array is used as the heat dissipation structure, a metal infiltration layer is deposited and a soldering tin layer is manufactured at a free end of the carbon nano tube array, and the carbon nano tube is then peeled off from a growing substrate so as to form a heat dissipation structure body. The soldering tin layer of the heat dissipation structure body is contacted with the metal infiltration layer of the electronic device for heating and soldering so that integration of the carbon nano tube heat dissipation structure and the electronic device is achieved. According to the method of the carbon nano tube heat dissipation structure and the electronic device, a carbon nano heat dissipation structure body with good performance can be directly integrated on the electronic device, and the technical problems that technology is complex and efficiency is low in other integrated methods of carbon nano heat dissipation structures are solved.

The invention discloses a heterojunction field effect transistor of a groove-insulated gate type composite source field plate. The transistor comprises a substrate, a transition layer, a barrier layer, a source electrode, a drain electrode, an insulation medium layer, an insulated groove gate, a passivation layer, a source field plate and a protection layer from bottom to top; a groove is opened on the barrier layer, the insulated groove gate is arranged on the insulation medium layer at the upper part of the groove, the source field plate is arranged on the passivation layer, and the source electrode is electrically connected with the source field plate, wherein, n floating field plates are deposited on the passivation layer arranged between the source field plate and the drain field plate. The floating field plates have the same size and are mutually independent, and the spacing between two adjacent floating field plates increases based on the number of the floating field plates arranged along the direction from the source field plate to the drain electrode. The n floating field plates are in floating state and completed together with the source field plate on the passivation layer by one-time process. The heterojunction field effect transistor has the advantages of simple process, good reliability, strong stability, good frequency characteristic and high output power, and can be used for fabricating microwave power devices based on III-V group compound semiconductor heterojunction structure.

The invention discloses a photovoltaic type detector array and a manufacturing method of the photovoltaic type detector array. The detector array comprises an n-type InSb substrate (1) and a passivation layer (7), t*t tabletops (2) are etched on the n-type InSb substrate (1), wherein t is an integer and is greater than or equal to one; an anode (5) is deposited on each tabletop (2), and an cathode (6) shaped like the Chinese character 'hui' is deposited on the upper portion of the edge of the n-type InSb substrate (1); the upper portion of the n-type InSb substrate (1) and the side face of each tabletop (2) are each provided with a protection layer (4) in a deposited mode; m identical p-type conical doping areas (3) are arranged in the positions, under each tabletop (2), of the n-type InSb substrate (1), and one pn junction is formed between each p-type conical doping area (3) and the n-type InSb substrate (1), wherein m is an integer and is greater than or equal to one. The photovoltaic type detector array has the advantages of being simple in process, high in quantum efficiency and low in crosstalk, and can be used for the fields of infrared detection and infrared medical treatment.

The invention relates to a safety belt hanger suitable for frameworks of multiple types. The safety belt hanger suitable for the framework of multiple types comprises a hanging rod and a clamping device which are fixedly connected; the clamping device comprises two sliding frames and two supporting frames provided with square spaces inside; the two sliding frames are fixedly connected to form an L-shaped structure; the two supporting frames can be fixed and form the L-shaped structure; one sliding frame is arranged in each square space; the extending direction of the sliding frames is perpendicular to the extending direction of the support frames where the sliding frames are inserted; the sliding frames and the supporting frames are enclosed to form a square clamping space; the clamping space is used for clamping a structural part of a transformer substation; and the distance that the sliding frames penetrate out of the supporting frames can be adjusted and fixed so as to adjust the size of the clamping space. The safety belt hanger suitable for the frameworks of multiple types can solve the problems that in an existing safety belt hanging device, the contact area of a pressing plate and a framework part is small, the pressing plate and the framework part can easily slide, and the safety belt hanger cannot be suitable for framework of multiple types.

The invention discloses an insulated gate type power device of a right-angled gate-drain composite field plate. The insulated gate type power device comprises a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a schottky drain electrode (5), a table board (6), an insulated medium layer (7), an insulated gate electrode (8), a passivation layer (9) and a protective layer (14), wherein a gate slot (10) and a drain slot (11) are etched in the passivation layer; a right-angled gate field plate (12) and a right-angled drain field plate (13) are deposited between the passivation layer and the protective layer; the right-angled gate field plate is electrically connected with the insulated gate electrode, and the gate slot is completely filled in the lower end of the right-angled gate field plate; the right-angled drain field plate is electrically connected with the schottky drain electrode, and the drain slot is completely filled in the lower end of the right-angled drain field plate; the right-angled gate field plate is close to one side edge of the insulated gate electrode and aligned with one side edge, close to the insulated gate electrode, of the gate slot; the right-angled drain field plate is close to one side edge of the schottky drain electrode and aligned with one side edge, close to the schottky drain electrode, of the drain slot. The insulated gate type power device of the right-angled gate-drain composite field plate has a simple process, good positive and negative characteristics, and a high yield, and can be used as a switching device.