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110results about How to "Raise the bias" patented technology

Self-ionized and inductively-coupled plasma for sputtering and resputtering

A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.
Owner:APPLIED MATERIALS INC

Insulated gate type source-leakage composite field plate transistor with high electron mobility and preparing method thereof

The invention discloses an insulated gate type source-drain composite field plate transistor with high electron mobility and a fabrication method thereof. The transistor comprises a substrate, a transition layer, a barrier layer, a source electrode, a drain electrode, an insulated gate electrode, a passivation layer, a source field plate, a drain field plate and a protection layer from bottom to top,; the source field plate is electrically connected with the source electrode, the drain field plate is electrically connected with the drain electrode, wherein, an insulation medium layer is deposited on the upper part of the source electrode, the upper part of the drain electrode as well as the upper part of the barrier layer between the source electrode and the drain electrode; and n floating field plates are deposited on the passivation layer arranged between the source field plate and the drain field plate. All the floating field plates have the same size and are mutually independent in floating state, and the floating field plates are equidistantly distributed between the source field plate and the drain field plate. The n floating plates, the source field plate and the drain plate are completed on the passivation layer by one-time process. The transistor has the advantages of simple process, strong reliability and high breakdown voltage, and the transistor and the fabrication method can be used for fabricating high power devices based on a wide band gap compound semiconductor material heterojunction.
Owner:XIDIAN UNIV

Self-ionized and inductively-coupled plasma for sputtering and resputtering

A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.
Owner:APPLIED MATERIALS INC
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