Source step field plate vertical power transistor

A power transistor and vertical technology, applied in the field of microelectronics, can solve the problems that the field plate structure cannot effectively modulate the electric field distribution in the device, and the performance of the device has not been improved, so as to achieve easy implementation, increase breakdown voltage, and increase yield Effect

Active Publication Date: 2017-08-18
XIDIAN UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, up to now, there is still no precedent of the field plate structure being successfully applied to GaN-based current aperture heterojunction field effect devices at home and abroad. This is mainly due to the inherent defects in the structure of GaN-based current aperture heterojunction field effect devices. As a result, the strongest electric field peak in the device drift layer is located near the interface between the current blocking layer and the aperture layer, and the electric field peak is far away from the surfaces on both sides of the drift layer, so the field plate structure can hardly play the role of effectively modulating the electric field distribution in the device, even in GaN The field plate structure is used in the base current aperture heterojunction field effect device, and there is almost no improvement in device performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Source step field plate vertical power transistor
  • Source step field plate vertical power transistor
  • Source step field plate vertical power transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] Embodiment 1: Fabricate a source stepped field plate vertical power transistor in which the passivation layer is SiN and the step number of the stepped field plate is 1.

[0060] Step 1. Epitaxial n on substrate 1 - type GaN, forming a drift layer 2, such as image 3 a.

[0061] use n + Type GaN is used as the substrate 1, and the epitaxial thickness is 100 μm and the doping concentration is 1×10 15 cm -3 the n - type GaN semiconductor material to form a drift layer 2, wherein:

[0062] The process conditions used for epitaxy are: temperature is 950°C, pressure is 40Torr, hydrogen flow rate is 4000sccm, SiH 4 As the doping source, the flow rate of ammonia gas is 4000 sccm, and the flow rate of gallium source is 100 μmol / min.

[0063] Step 2. Epitaxial n-type GaN on the drift layer to form an aperture layer 3, such as image 3 b.

[0064] Using the metal-organic chemical vapor deposition technique, the epitaxial thickness h on the drift layer 2 is 0.5 μm, and th...

Embodiment 2

[0109] Embodiment 2: Making the passivation layer is SiO 2 , and the step number of the step field plate is 2 source step field plate vertical type power transistor.

[0110] Step 1. Epitaxial n on substrate 1 - type GaN, forming a drift layer 2, such as image 3 a.

[0111] At a temperature of 1000°C and a pressure of 45Torr, SiH 4 is the dopant source, the flow rate of hydrogen gas is 4400 sccm, the flow rate of ammonia gas is 4400 sccm, and the flow rate of gallium source is 110 μmol / min. + Type GaN is used as the substrate 1, and the epitaxial thickness is 10 μm and the doping concentration is 5×10 16 cm -3 the n - type GaN material to complete the fabrication of the drift layer 2 .

[0112] The second step. Epitaxial n-type GaN on the drift layer to form the aperture layer 3, such as image 3 b.

[0113] At a temperature of 1000°C and a pressure of 45Torr, SiH 4 As the doping source, the flow rate of hydrogen gas is 4400sccm, the flow rate of ammonia gas is 4400...

Embodiment 3

[0151] Embodiment three: making passivation layer is SiO 2 , and the step number of the step field plate is 3 source step field plate vertical type power transistor.

[0152] Step A. The temperature is 950°C, the pressure is 40Torr, and SiH 4 As the doping source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the flow rate of gallium source is 100 μmol / min. + Type GaN is used as the substrate 1, using the metal-organic chemical vapor deposition technique, the epitaxial thickness on the substrate is 3 μm, and the doping concentration is 1×10 18 cm -3 the n - Type GaN material, making drift layer 2, such as image 3 a.

[0153] Step B. The temperature is 950°C, the pressure is 40Torr, and SiH 4 is the dopant source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the flow rate of gallium source is 100 μmol / min. Using metal organic chemical vapor deposition technology, the epitaxial thic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Widthaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a source step field plate vertical power transistor comprising a substrate (1), a drift layer (2), an aperture layer (3), a three-step blocking layer (4), a channel layer (6), a barrier layer (7), and a passivation layer (12). Sources (9) are deposited at the two sides of the barrier layer. A gate (10) is deposited on the barrier layer between the sources. A drain (11) is deposited under the substrate. The passivation layer (12) wraps all areas except the bottom of the drain. The two sides of the passivation layer are engraved with steps. Metal is deposited on the steps to form step field plates (13). The step field plates are electrically connected with the sources. The source step field plate vertical power transistor of the invention has the advantages of high breakdown voltage, simple process, low on resistance and high yield, and can be used in power electronic systems.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor device, in particular to a vertical power transistor with a source stepped field plate, which can be used in a power electronic system. [0002] technical background [0003] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the performance of traditional first-gener...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/40H01L29/778H01L29/06H01L21/335
CPCH01L29/0615H01L29/404H01L29/66462H01L29/7787
Inventor 毛维王海永艾治州郝跃张弘
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap