Hetero junction field effect transistor for insulated gate type source field board

Abstract

The invention discloses an insulated gate type source field plate heterojunction field effect transistor. The transistor comprises, from bottom to top, a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), an insulating medium layer (6), an insulated gate electrode (7), a passivation layer (8), a source field plate (9) and a protection layer (11); the source field plate (9) is arranged on the passivation layer (8) and is electrically connected with the source electrode (4), wherein, n floating field plates (10) are deposited on the passivation layer (8) along the direction from the source field plate to the drain electrode. The floating field plates have the same size and are mutually independent, and the spacing between two adjacent floating field plates successively increases based on the number of the floating field plates arranged along the direction from the source field plate to the drain electrode. The n floating field plates and the source field plate are completed on the passivation layer by one time process. The transistor has the advantages of simple process, high breakdown voltage and good reliability, and can be used for fabricating high-frequency high-power devices based on an III-V group compound semiconductor material heterojunction structure.

Description

technical field [0001] The invention belongs to the field of microelectronic technology, and relates to semiconductor devices, in particular to an insulated gate type source field plate heterojunction field effect transistor based on a III-V compound semiconductor material heterojunction structure, which can be used as a microwave, millimeter wave communication system and radar The basic components of the system. technical background [0002] As is well known in the industry, semiconductor materials composed of group III elements and group V elements, that is, group III-V compound semiconductor materials, such as gallium nitride (GaN)-based, gallium arsenide (GaAs)-based, indium phosphide (InP)-based And other semiconductor materials, their bandgap widths are often quite different, so people usually use these III-V compound semiconductor materials to form various heterojunction structures. Due to the large difference in the band gap of III-V compound semiconductor materials...

AI Technical Summary

Problems solved by technology

However, the manufacturing process of the heterojunction field effect transistor using the stacked field plate structure is relatively complicated. Each additional layer of field plate requires additional process steps such as photolithography, metal deposition, insulating dielectric material deposition, stripping, and cleaning. To make the insulating dielectric material deposited under the field plates of each layer have an appropriate thickness, cumbersome process debugging must be carried out, which greatly increases the difficulty of device manufacturing and reduces the yield of devices.

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