Groove gate type gate-leakage composite field plate transistor with high electron mobility

Abstract

The invention discloses a groove-gate type gate-drain composite field plate transistor with high electron mobility. The transistor comprises, from bottom to top, a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), a groove gate (7), a passivation layer (8), a gate field plate (9), a drain field plate (11) and a protection layer (12); the drain field plate (11) is electrically connected with the drain electrode (5), the groove gate (7) is electrically connected with the gate field plate (9), wherein, a groove (6) is opened on the barrier layer (3); and n floating field plates (10) are deposited on the passivation layer arranged between the gate field plate and the drain field plate. All the floating field plates have the same size and are in a floating state, and the floating field plates are equidistantly distributed between the gate field plate and the drain field plate. The n floating plates, the gate field plate and the drain plate are completed on the passivation layer by one-time process. The transistor has the advantages of simple process, good reliability and high breakdown voltage, and can be used for fabricating high power devices based on a wide band gap compound semiconductor material heterojunction.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to semiconductor devices, in particular to a groove gate type gate-drain compound field plate high electron mobility transistor based on a heterojunction structure of a wide bandgap compound semiconductor material, which can be used as a basic device of a high-power system. technical background [0002] In today's world, power semiconductor devices such as power rectifiers and power switches have been widely used in many power fields such as switching power supplies, automotive electronics, industrial control, radio communications, and motor control. Power semiconductor devices must have the following two important properties, namely high breakdown voltage and low on-resistance. The Baliga figure of merit reflects the compromise relationship between breakdown voltage and on-resistance in power semiconductor devices. to explore. Silicon material is the most commonly used mat...

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Problems solved by technology

However, the manufacturing process of the high electron mobility transistor using the stacked field plate structure is relatively complicated. Each additional layer of field plate requires additional process steps such as photolithography, metal deposition, insulating dielectric material deposition, stripping, and cleaning. To make the insulating dielectric material deposited under the field plates of each layer have an appropriate thickness, cumbersome process debugging must be carried out, thus greatly increasing the difficulty of device manufacturing and reducing the yield of devices

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