Groove gate type gate-leakage composite field plate transistor with high electron mobility

A technology of high electron mobility and leakage field plate, which is applied in the field of microelectronics, can solve the problems of reducing device yield, complex manufacturing process, and increasing device difficulty, and achieve the goals of increasing area, improving breakdown voltage, and enhancing reliability. Effect

Inactive Publication Date: 2009-04-22
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the manufacturing process of the high electron mobility transistor using the stacked field plate structure is relatively complicated. Each additional layer of field plate requires additional process steps such as photolithography, metal deposition, insulating dielectric material depositi

Method used

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  • Groove gate type gate-leakage composite field plate transistor with high electron mobility
  • Groove gate type gate-leakage composite field plate transistor with high electron mobility
  • Groove gate type gate-leakage composite field plate transistor with high electron mobility

Examples

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Example Embodiment

[0052] Example 1

[0053] The substrate is sapphire and the passivation layer is SiO 2 , the protective layer is SiO 2 And the composite field plate high electron mobility transistor in which each field plate is a combination of Ti / Au metal, the process is:

[0054] 1. An undoped transition layer 2 with a thickness of 1 μm is epitaxially formed on a sapphire substrate 1 by metal organic chemical vapor deposition technology. The transition layer is composed of GaN materials with thicknesses of 35 nm and 0.965 μm from bottom to top. The process conditions used for the epitaxial lower layer GaN material are: the temperature is 535°C, the pressure is 105 Torr, the hydrogen flow rate is 5100sccm, the ammonia gas flow rate is 5100sccm, and the gallium source flow rate is 35 μmol / min; the process conditions used for the epitaxial upper layer GaN material are: the temperature is 1050°C, the pressure is 105 Torr, the flow rate of hydrogen gas is 5100 sccm, the flow rate of ammonia ga...

Example Embodiment

[0062] Embodiment 2

[0063] The process of fabricating a composite field plate high electron mobility transistor with a silicon carbide substrate, a passivation layer of SiN, a protective layer of SiN and each field plate of Ni / Au metal combination is as follows:

[0064] 1. An undoped transition layer 2 with a thickness of 2.6 μm is epitaxially formed on a silicon carbide substrate 1 using metal organic chemical vapor deposition technology. The transition layer is composed of AlN material with a thickness of 20 nm and a thickness of 2.58 μm from bottom to top. Made of GaN material. The process conditions used for the epitaxial lower layer AlN material are: the temperature is 980°C, the pressure is 110 Torr, the hydrogen flow rate is 4300sccm, the ammonia gas flow rate is 4300sccm, and the aluminum source flow rate is 5 μmol / min; the process conditions used for the epitaxial upper layer GaN material are: the temperature is 980°C, the pressure is 110 Torr, the flow rate of hy...

Example Embodiment

[0072] Embodiment 3

[0073] The production substrate is silicon and the passivation layer is Al 2 O 3 , the protective layer is Al 2 O 3 And each field plate is a combination of Pt / Au metal composite field plate high electron mobility transistor, the process is:

[0074] 1. An undoped transition layer 2 with a thickness of 5 μm is epitaxially formed on a silicon substrate 1 using metal organic chemical vapor deposition technology. The transition layer consists of AlN material with a thickness of 100 nm and a GaN material with a thickness of 4.9 μm from bottom to top constitute. The process conditions used for the epitaxial lower layer AlN material are: the temperature is 810°C, the pressure is 120 Torr, the hydrogen flow rate is 4100sccm, the ammonia gas flow rate is 4100sccm, and the aluminum source flow rate is 20 μmol / min; the process conditions used for the epitaxial upper layer GaN material are: the temperature is 950°C, the pressure is 120 Torr, the flow rate of hy...

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Abstract

The invention discloses a groove-gate type gate-drain composite field plate transistor with high electron mobility. The transistor comprises, from bottom to top, a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), a groove gate (7), a passivation layer (8), a gate field plate (9), a drain field plate (11) and a protection layer (12); the drain field plate (11) is electrically connected with the drain electrode (5), the groove gate (7) is electrically connected with the gate field plate (9), wherein, a groove (6) is opened on the barrier layer (3); and n floating field plates (10) are deposited on the passivation layer arranged between the gate field plate and the drain field plate. All the floating field plates have the same size and are in a floating state, and the floating field plates are equidistantly distributed between the gate field plate and the drain field plate. The n floating plates, the gate field plate and the drain plate are completed on the passivation layer by one-time process. The transistor has the advantages of simple process, good reliability and high breakdown voltage, and can be used for fabricating high power devices based on a wide band gap compound semiconductor material heterojunction.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to semiconductor devices, in particular to a groove gate type gate-drain compound field plate high electron mobility transistor based on a heterojunction structure of a wide bandgap compound semiconductor material, which can be used as a basic device of a high-power system. technical background [0002] In today's world, power semiconductor devices such as power rectifiers and power switches have been widely used in many power fields such as switching power supplies, automotive electronics, industrial control, radio communications, and motor control. Power semiconductor devices must have the following two important properties, namely high breakdown voltage and low on-resistance. The Baliga figure of merit reflects the compromise relationship between breakdown voltage and on-resistance in power semiconductor devices. to explore. Silicon material is the most commonly used mat...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/06H01L21/335
Inventor 毛维郝跃杨翠过润秋马晓华张进成张金风
Owner XIDIAN UNIV
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