Heterojunction field effect transistor of composite source field plate based on medium modulation

Abstract

The invention discloses a heterojunction field effect transistor of a composite source field plate based on medium modulation. The heterojunction field effect transistor of the composite source filed plate based on the medium modulation is mainly used for solving the problem that the process for realizing high breakdown voltage in the existing field plate technology is complex. The heterojunction field effect transistor comprises a substrate (1), a transitional layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), a table board (6), a passivation layer (9) and a protective layer (13), wherein a gate slot (7) is etched in the barrier layer between the source electrode and the drain electrode; a grid electrode (8) is deposited in the grid slot (7); a groove (10) is etched in the passivation layer (9) between the grid electrode and the drain electrode; a high dielectric constant medium (11) is completely filled in the groove (10); a source field plate (12) is deposited between the passivation layer (9) and the protective layer (13); the source field plate is electrically connected with a source electrode; and the source field plate (12) and the high dielectric constant medium (11) form a composite source field plate. The heterojunction field effect transistor of the composite source filed plate based on the medium modulation has the advantages of a simple manufacturing process, high breakthrough voltage, high field plate efficiency, high reliability and high yield.

Description

technical field

[0001] The invention belongs to the technical field of semiconductor devices, in particular to a compound source field plate heterojunction field effect transistor based on dielectric modulation, which can be used as a basic device of a power electronic system. technical background

[0002] Power semiconductor devices are important components of power electronic systems and effective tools for power processing. In recent years, as energy and environmental issues have become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. However, in the research of power devices, there is a serious constraint relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this constraint relationship is the key to improving the overall performance of the device. As the market...

Examples

Embodiment 1

[0041] Embodiment one: making substrate is sapphire, and passivation layer is Al 2 o 3 , the protective layer is SiO 2 , the high dielectric constant medium 11 is HfO 2 , The source field plate is a composite source field plate heterojunction field effect transistor based on dielectric modulation with Ti / Mo / Au metal combination.

[0042] Step 1. On the sapphire substrate 1, make the transition layer 2 by epitaxial GaN material from bottom to top, such as image 3 a.

[0043] An undoped transition layer 2 with a thickness of 1 μm is epitaxially formed on the sapphire substrate 1 by metal organic chemical vapor deposition technology, and the transition layer is composed of GaN materials with thicknesses of 30 nm and 0.97 μm from bottom to top. The process conditions used for the epitaxial lower layer GaN material are: temperature 530°C, pressure 45 Torr, hydrogen gas flow rate 4400 sccm, ammonia gas flow rate 4400 sccm, gallium source flow rate 22 μmol / min; the process condi...

Embodiment 2

[0064] Embodiment 2: The substrate is made of silicon carbide, and the passivation layer is SiO 2 , the protective layer is SiN, and the high dielectric constant dielectric 11 is Al 2 o 3 , The source field plate is a composite source field plate heterojunction field effect transistor based on dielectric modulation with Ti / Ni / Au metal combination.

[0065] Step 1. Epitaxially AlN and GaN materials on the silicon carbide substrate 1 to form the transition layer 2, such as image 3 a.

[0066] 1.1) Using metal-organic chemical vapor deposition technology to epitaxially undoped AlN material with a thickness of 50nm on the silicon carbide substrate 1; the process conditions for the epitaxy are: temperature is 1000°C, pressure is 45Torr, hydrogen flow rate is 4600sccm, The flow rate of ammonia gas is 4600 sccm, and the flow rate of aluminum source is 5 μmol / min;

[0067] 1.2) Using metal-organic chemical vapor deposition technology to epitaxially GaN material with a thickness o...

Embodiment 3

[0101] Embodiment three: the substrate is made of silicon, the passivation layer is SiN, and the protective layer is SiO 2 , the high dielectric constant medium 11 is HfO 2 , The source field plate is a composite source field plate heterojunction field effect transistor based on dielectric modulation with Ti / Pt / Au metal combination.

[0102] Step A. Epitaxial AlN and GaN materials on the silicon substrate 1 from bottom to top to make the transition layer 2, such as image 3 a.

[0103] A1) Using metal-organic chemical vapor deposition technology at a temperature of 800° C., a pressure of 40 Torr, a flow rate of hydrogen gas of 4000 sccm, a flow rate of ammonia gas of 4000 sccm, and a flow rate of aluminum source of 25 μmol / min, the epitaxy on the silicon substrate 1 AlN material with a thickness of 200nm;

[0104] A2) Using metal-organic chemical vapor deposition technology at a temperature of 980°C, a pressure of 45 Torr, a flow rate of hydrogen gas of 4000 sccm, a flow ra...

technical field

[0001] The invention belongs to the technical field of semiconductor devices, in particular to a compound source field plate heterojunction field effect transistor based on dielectric modulation, which can be used as a basic device of a power electronic system. technical background

[0002] Power semiconductor devices are important components of power electronic systems and effective tools for power processing. In recent years, as energy and environmental issues have become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. However, in the research of power devices, there is a serious constraint relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this constraint relationship is the key to improving the overall performance of the device. As the market...

Examples

Embodiment 1

[0041] Embodiment one: making substrate is sapphire, and passivation layer is Al 2 o 3 , the protective layer is SiO 2 , the high dielectric constant medium 11 is HfO 2 , The source field plate is a composite source field plate heterojunction field effect transistor based on dielectric modulation with Ti / Mo / Au metal combination.

[0042] Step 1. On the sapphire substrate 1, make the transition layer 2 by epitaxial GaN material from bottom to top, such as image 3 a.

[0043] An undoped transition layer 2 with a thickness of 1 μm is epitaxially formed on the sapphire substrate 1 by metal organic chemical vapor deposition technology, and the transition layer is composed of GaN materials with thicknesses of 30 nm and 0.97 μm from bottom to top. The process conditions used for the epitaxial lower layer GaN material are: temperature 530°C, pressure 45 Torr, hydrogen gas flow rate 4400 sccm, ammonia gas flow rate 4400 sccm, gallium source flow rate 22 μmol / min; the process condi...

Embodiment 2

[0064] Embodiment 2: The substrate is made of silicon carbide, and the passivation layer is SiO 2 , the protective layer is SiN, and the high dielectric constant dielectric 11 is Al 2 o 3 , The source field plate is a composite source field plate heterojunction field effect transistor based on dielectric modulation with Ti / Ni / Au metal combination.

[0065] Step 1. Epitaxially AlN and GaN materials on the silicon carbide substrate 1 to form the transition layer 2, such as image 3 a.

[0066] 1.1) Using metal-organic chemical vapor deposition technology to epitaxially undoped AlN material with a thickness of 50nm on the silicon carbide substrate 1; the process conditions for the epitaxy are: temperature is 1000°C, pressure is 45Torr, hydrogen flow rate is 4600sccm, The flow rate of ammonia gas is 4600 sccm, and the flow rate of aluminum source is 5 μmol / min;

[0067] 1.2) Using metal-organic chemical vapor deposition technology to epitaxially GaN material with a thickness o...

Embodiment 3

[0101] Embodiment three: the substrate is made of silicon, the passivation layer is SiN, and the protective layer is SiO 2 , the high dielectric constant medium 11 is HfO 2 , The source field plate is a composite source field plate heterojunction field effect transistor based on dielectric modulation with Ti / Pt / Au metal combination.

[0102] Step A. Epitaxial AlN and GaN materials on the silicon substrate 1 from bottom to top to make the transition layer 2, such as image 3 a.

[0103] A1) Using metal-organic chemical vapor deposition technology at a temperature of 800° C., a pressure of 40 Torr, a flow rate of hydrogen gas of 4000 sccm, a flow rate of ammonia gas of 4000 sccm, and a flow rate of aluminum source of 25 μmol / min, the epitaxy on the silicon substrate 1 AlN material with a thickness of 200nm;

[0104] A2) Using metal-organic chemical vapor deposition technology at a temperature of 980°C, a pressure of 45 Torr, a flow rate of hydrogen gas of 4000 sccm, a flow ra...

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