Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photovoltaic detector array and manufacturing method thereof

A detector array, photovoltaic type technology, applied in the direction of photovoltaic power generation, semiconductor devices, electrical components, etc., can solve the problems that affect the generation of photogenerated carriers and the difficulty of realization, so as to enhance the ability, improve the quantum efficiency, and increase the junction density. area effect

Inactive Publication Date: 2016-08-17
XIDIAN UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this invention requires the heteroepitaxial InSb material on the silicon substrate, which will cause a large number of dislocations or defects in the n-type InSb region, especially near the interface between the silicon substrate and the n-type InSb region, and affect the flow of photogenerated carriers. Generate and capture a large number of photogenerated carriers. In addition, the invention also needs to prepare silicon microlenses, so the invention is difficult to realize

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photovoltaic detector array and manufacturing method thereof
  • Photovoltaic detector array and manufacturing method thereof
  • Photovoltaic detector array and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Embodiment 1: The protective layer is SiN, the passivation layer is SiN, the number of p-type conical doped regions directly below each mesa is m=4, and the array size is 50×50 photovoltaic detector arrays.

[0040] Step 1, etching and manufacturing 50×50 mesas 2 on the n-type InSb substrate 1, such as Figure 5 a.

[0041] 1a) At a thickness k of 22 μm and a doping concentration of 1×10 16 cm -3 For the first time, a mask is made on the n-type InSb substrate 1. The mask pattern is an array of 50×50 squares whose side length L is 52 μm. The distance between two adjacent squares is d 1 , and the distance d between the most edge square and the edge of n-type InSb substrate 1 2 Both are 50μm;

[0042] 1b) Use the mask to etch 50×50 mesas 2 on the n-type InSb substrate 1 by reactive ion etching technology, where the height H of each mesa is 8 μm. After the n-type InSb substrate 1 is etched The thickness s is 14 μm. The process conditions used for etching the mesa are:...

Embodiment 2

[0068] Embodiment 2: Making the protective layer is SiO 2 , the passivation layer is SiO 2 , the number of p-type tapered doped regions directly under each mesa is m=2, and the array size is a photovoltaic detector array of 1024×1024.

[0069] Step 1, etching and manufacturing 1024×1024 mesas 2 on the n-type InSb substrate 1, such as Figure 5 a.

[0070] At a thickness k of 14 μm and a doping concentration of 1×10 14 cm -3 The n-type InSb substrate 1 made a mask for the first time, using inductively coupled plasma reactive etching technology, in Ar / CH 4 / H 2 Under the process conditions of a flow ratio of 1:3:10, a pressure of 15Pa, and a power of 600W, 1024×1024 mesa heights H of 4 μm were etched on the n-type InSb substrate 1, and the upper and lower surfaces were both square and A mesa 2 with a side length L of 30 μm, where the distance between two adjacent mesas is d 1 , the distance d between the edge of the mesa and the edge of the n-type InSb substrate 2 Both a...

Embodiment 3

[0087] Embodiment three: making protective layer is SiN, and passivation layer is SiO 2 , the number of p-type tapered doped regions directly below each mesa is m=1, and the array size is a photovoltaic detector array of 30000×30000.

[0088] Step A, etching and manufacturing 30000×30000 mesas 2 on the n-type InSb substrate 1, such as Figure 5 a.

[0089] At a thickness k of 4.4 μm and a doping concentration of 1×10 11 cm -3 For the first time, a mask was made on the n-type InSb substrate 1, and 30000×30000 square mesas 2 with a side length of 5 μm were etched on the n-type InSb substrate 1 by inductively coupled plasma reactive etching technology. The distance d between two tables 1 , the distance d between the edge of the mesa 2 and the edge of the n-type InSb substrate 1 2 Both are 1 μm, the height H of each mesa is 0.4 μm, and the thickness s of the n-type InSb substrate 1 after etching is 4 μm. The process conditions for etching the mesa are: Ar / CH 4 / H 2 The flo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a photovoltaic type detector array and a manufacturing method of the photovoltaic type detector array. The detector array comprises an n-type InSb substrate (1) and a passivation layer (7), t*t tabletops (2) are etched on the n-type InSb substrate (1), wherein t is an integer and is greater than or equal to one; an anode (5) is deposited on each tabletop (2), and an cathode (6) shaped like the Chinese character 'hui' is deposited on the upper portion of the edge of the n-type InSb substrate (1); the upper portion of the n-type InSb substrate (1) and the side face of each tabletop (2) are each provided with a protection layer (4) in a deposited mode; m identical p-type conical doping areas (3) are arranged in the positions, under each tabletop (2), of the n-type InSb substrate (1), and one pn junction is formed between each p-type conical doping area (3) and the n-type InSb substrate (1), wherein m is an integer and is greater than or equal to one. The photovoltaic type detector array has the advantages of being simple in process, high in quantum efficiency and low in crosstalk, and can be used for the fields of infrared detection and infrared medical treatment.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photovoltaic detection devices, in particular to a photovoltaic detector array, which can be used for infrared detection, infrared guidance and infrared medical treatment. technical background [0002] The infrared focal plane detector array is the core component of the infrared system, and its function is to convert infrared radiation into other signals that we can recognize. Infrared focal plane array device is an advanced imaging sensor with both infrared information acquisition and information processing functions. It has important and extensive applications in military and civilian fields such as space ground observation, photoelectric countermeasures, robot vision, medical and industrial thermal imaging, search and tracking, and missile precision guidance. High-performance large-scale infrared focal plane arrays have been widely used It is used in various major national security proje...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/101H01L31/18
CPCH01L31/035281H01L31/101H01L31/184Y02E10/544
Inventor 杨翠马京立林宏杰张延涛马琳张小雷孟超陈晓冬吕衍秋司俊杰
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com