Insulated Gate Right Angle Gate-Drain Composite Field Plate Power Device

Abstract

The invention discloses an insulated gate type power device of a right-angled gate-drain composite field plate. The insulated gate type power device comprises a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a schottky drain electrode (5), a table board (6), an insulated medium layer (7), an insulated gate electrode (8), a passivation layer (9) and a protective layer (14), wherein a gate slot (10) and a drain slot (11) are etched in the passivation layer; a right-angled gate field plate (12) and a right-angled drain field plate (13) are deposited between the passivation layer and the protective layer; the right-angled gate field plate is electrically connected with the insulated gate electrode, and the gate slot is completely filled in the lower end of the right-angled gate field plate; the right-angled drain field plate is electrically connected with the schottky drain electrode, and the drain slot is completely filled in the lower end of the right-angled drain field plate; the right-angled gate field plate is close to one side edge of the insulated gate electrode and aligned with one side edge, close to the insulated gate electrode, of the gate slot; the right-angled drain field plate is close to one side edge of the schottky drain electrode and aligned with one side edge, close to the schottky drain electrode, of the drain slot. The insulated gate type power device of the right-angled gate-drain composite field plate has a simple process, good positive and negative characteristics, and a high yield, and can be used as a switching device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor device, in particular to an insulating gate type right-angle gate-drain composite field plate power device, which can be used as a basic device of a power electronic system. [0002] technical background [0003] Power semiconductor devices are important components of power electronic systems and effective tools for power processing. In recent years, as energy and environmental issues have become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. However, in the research of power devices, there is a serious constraint relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this constraint relationship is the key to improving the overall performance of th...

AI Technical Summary

Problems solved by technology

However, the process of double-layer field plate HEMT power devices is complicated and the manufacturing cost is higher. The fabrication of each layer of field plate requires process steps such as photolithography, metal deposition, and passivation dielectric deposition.

Moreover, in order to optimize the thickness of the dielectric material under the field plates of each layer to maximize the breakdown voltage, tedious process debugging and optimization must be carried out, which greatly increases the difficulty of device manufacturing and reduces the yield of devices.

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