Groove gate type source-leakage composite field plate heterojunction field effect transistor and preparation method thereof

A heterojunction field effect and leaky field plate technology, applied in the field of microelectronics, can solve problems such as complex manufacturing process, lower device yield, cumbersome process debugging, etc., to achieve the goal of reducing electric field, increasing breakdown voltage, and enhancing reliability Effect

Active Publication Date: 2009-04-22
XIAN CETC XIDIAN UNIV RADAR TECH COLLABORATIVE INNOVATION INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the manufacturing process of the heterojunction field effect transistor using the stacked field plate structure is relatively complicated. Each additional layer of field plate requires additional process steps such as photolithography, metal deposition, insulating dielectric material depos

Method used

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  • Groove gate type source-leakage composite field plate heterojunction field effect transistor and preparation method thereof
  • Groove gate type source-leakage composite field plate heterojunction field effect transistor and preparation method thereof
  • Groove gate type source-leakage composite field plate heterojunction field effect transistor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] The production substrate is sapphire and the passivation layer is SiO 2 , the protective layer is SiO 2 The compound field plate heterojunction field effect transistor with each field plate being a combination of Ti / Au metal, the process is:

[0055] 1. Epitaxial undoped transition layer 2 with a thickness of 1 μm on the sapphire substrate 1 by metal organic chemical vapor deposition technology, the transition layer is composed of GaN materials with thicknesses of 37 nm and 0.963 μm from bottom to top. The process conditions adopted for the epitaxial lower layer GaN material are: temperature 538°C, pressure 120 Torr, hydrogen gas flow rate 5200 sccm, ammonia gas flow rate 5200 sccm, gallium source flow rate 40 μmol / min; the process conditions adopted for the epitaxial upper layer GaN material are: temperature 1060°C, pressure 120 Torr, hydrogen flow rate 5200 sccm, ammonia gas flow rate 5200 sccm, gallium source flow rate 170 μmol / min.

[0056] 2. Deposit an undoped b...

Embodiment 2

[0064] The process of manufacturing a composite field plate heterojunction field effect transistor with a substrate of silicon carbide, a passivation layer of SiN, a protective layer of SiN, and a combination of Ni / Au metal for each field plate is as follows:

[0065] 1. Using metal organic chemical vapor deposition technology to epitaxially have an undoped transition layer 2 with a thickness of 2.2 μm on a silicon carbide substrate 1, the transition layer is composed of an AlN material with a thickness of 30 nm and a thickness of 2.17 μm from bottom to top. Made of GaN material. The process conditions used for the epitaxial lower layer AlN material are: temperature 990°C, pressure 122 Torr, hydrogen gas flow rate 4400 sccm, ammonia gas flow rate 4400 sccm, aluminum source flow rate 6 μmol / min; the process conditions for the epitaxial upper layer GaN material are: temperature 990°C, the pressure is 122 Torr, the flow rate of hydrogen gas is 4400 sccm, the flow rate of ammonia ...

Embodiment 3

[0074] The production substrate is silicon, and the passivation layer is Al 2 o 3 , the protective layer is Al 2 o 3 The compound field plate heterojunction field effect transistor with each field plate being a combination of Pt / Au metal, the process is:

[0075] 1. Using metal organic chemical vapor deposition technology to epitaxially undoped transition layer 2 with a thickness of 5 μm on the silicon substrate 1, the transition layer is composed of AlN material with a thickness of 105 nm and GaN material with a thickness of 4.895 μm from bottom to top constitute. The process conditions used for the epitaxial lower layer AlN material are: temperature 820°C, pressure 130 Torr, hydrogen gas flow rate 4300 sccm, ammonia gas flow rate 4300 sccm, aluminum source flow rate 25 μmol / min; the process conditions for the epitaxial upper layer GaN material are: temperature 980°C, the pressure is 130 Torr, the flow rate of hydrogen gas is 4300 sccm, the flow rate of ammonia gas is 430...

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Abstract

The invention discloses a groove-gate type source-drain composite field plate heterojunction field effect transistor and a fabrication method thereof. The transistor comprises, from bottom to top, a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), a groove gate (7), a passivation layer (8), a source field plate (9), a drain field plate (11) and a protection layer (12); the drain field plate is electrically connected with the drain electrode, the source field plate is electrically connected with the source electrode, wherein, a groove (6) is opened on the barrier layer (3); and n floating field plates (10) are deposited on the passivation layer arranged between the source field plate and drain field plate. All the floating field plate have the same size and are in a floating state, and the floating field plates are equidistantly distributed between the source field plate and the drain field plate. The n floating field plates, the source field plate and the drain field plate are completed on the passivation layer by one-time process. The transistor has the advantages of high yield, good reliability and high output power, and the transistor and the fabrication method can be used for fabricating power devices based on a wide band gap compound semiconductor material heterojunction.

Description

technical field [0001] The invention belongs to the field of microelectronics technology, and relates to semiconductor devices, in particular to a trench-gate source-drain composite field plate heterojunction field effect transistor based on a heterojunction structure of a wide bandgap compound semiconductor material, which can be used as a basic device of a high-power system . technical background [0002] In today's world, power semiconductor devices such as power rectifiers and power switches have been widely used in many power fields such as switching power supplies, automotive electronics, industrial control, radio communications, and motor control. Power semiconductor devices must have the following two important parameters, namely high breakdown voltage and low on-resistance. The Baliga figure of merit reflects the compromise relationship between breakdown voltage and on-resistance in power semiconductor devices. to explore. Silicon material is the most commonly us...

Claims

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Application Information

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IPC IPC(8): H01L29/772H01L29/06H01L21/335
Inventor 郝跃毛维过润秋杨翠
Owner XIAN CETC XIDIAN UNIV RADAR TECH COLLABORATIVE INNOVATION INST CO LTD
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