Groove grating type right angle composite grating field plate heterogeneous junction device and manufacture method thereof

A compound gate and heterojunction technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of reducing device yield, cumbersome process debugging, and increasing device difficulty, so as to improve reliability and reduce Electric field, effect of reducing gate leakage current

Active Publication Date: 2015-03-11
XIDIAN UNIV
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  • Application Information

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Problems solved by technology

However, the process of GaN-based double-layer field plate HEMT devices is complex and the manufacturing cost is higher. The fabrication of each field plate requires process steps such as photolithography, metal deposition, and passivation dielectric deposition.
Moreover, in order to optimize the thickness of the dielectric material under the field plates of each layer to maximize the breakdown voltage, tedious process debugging and optimization must be carried out, which greatly increases the difficulty of device manufacturing and reduces the yield of devices.

Method used

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  • Groove grating type right angle composite grating field plate heterogeneous junction device and manufacture method thereof
  • Groove grating type right angle composite grating field plate heterogeneous junction device and manufacture method thereof
  • Groove grating type right angle composite grating field plate heterogeneous junction device and manufacture method thereof

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Experimental program
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Effect test

Embodiment 1

[0042] Embodiment one: making substrate is sapphire, and passivation layer is Al 2 o 3 , the protective layer is SiN, and the high dielectric constant dielectric is HfO 2 , the in-line gate field plate is a groove gate type right-angle compound gate field plate heterojunction device composed of Ti / Mo / Au metal.

[0043] Step 1. On the sapphire substrate 1, make the transition layer 2 by epitaxial GaN material from bottom to top, such as image 3 a.

[0044] An undoped transition layer 2 with a thickness of 1 μm is epitaxially formed on the sapphire substrate 1 by metal organic chemical vapor deposition technology, and the transition layer is composed of GaN materials with thicknesses of 30 nm and 0.97 μm from bottom to top. The process conditions used for the epitaxial lower layer GaN material are: temperature 530°C, pressure 45 Torr, hydrogen gas flow rate 4400 sccm, ammonia gas flow rate 4400 sccm, gallium source flow rate 22 μmol / min; the process conditions for the epitax...

Embodiment 2

[0065] Embodiment 2: The substrate is made of silicon carbide, and the passivation layer is SiO 2 , the protective layer is SiN, and the high dielectric constant dielectric is Al 2 o 3 , the inline gate field plate is a groove gate type right-angle compound gate field plate heterojunction device composed of Ti / Ni / Au metal.

[0066] Step 1. Epitaxially AlN and GaN materials on the silicon carbide substrate 1 to form the transition layer 2, such as image 3 a.

[0067] 1.1) Using metal-organic chemical vapor deposition technology to epitaxially undoped AlN material with a thickness of 50nm on the silicon carbide substrate 1; the process conditions for the epitaxy are: temperature is 1000°C, pressure is 45Torr, hydrogen flow rate is 4600sccm, The flow rate of ammonia gas is 4600 sccm, and the flow rate of aluminum source is 5 μmol / min;

[0068] 1.2) Using metal-organic chemical vapor deposition technology to epitaxially GaN material with a thickness of 2.45 μm on the AlN mate...

Embodiment 3

[0102] Embodiment three: the substrate is made of silicon, the passivation layer is SiN, and the protective layer is SiO 2 , the high dielectric constant medium is HfO 2 , the inline gate field plate is a groove gate type right-angle compound gate field plate heterojunction device composed of Ti / Pt / Au metal.

[0103] Step A. Epitaxial AlN and GaN materials on the silicon substrate 1 from bottom to top to make the transition layer 2, such as image 3 a.

[0104] A1) Using metal-organic chemical vapor deposition technology at a temperature of 800° C., a pressure of 40 Torr, a flow rate of hydrogen gas of 4000 sccm, a flow rate of ammonia gas of 4000 sccm, and a flow rate of aluminum source of 25 μmol / min, the epitaxy on the silicon substrate 1 AlN material with a thickness of 200nm;

[0105] A2) Using metal-organic chemical vapor deposition technology at a temperature of 980°C, a pressure of 45 Torr, a flow rate of hydrogen gas of 4000 sccm, a flow rate of ammonia gas of 4000...

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Abstract

The invention discloses a groove grating type right angle composite grating field plate heterogeneous junction device and a manufacture method thereof. The groove grating type right angle composite grating field plate heterogeneous junction device and the manufacture method thereof mainly solve the problem that processes are complex when an existing field plate technology is used to achieve high breakdown voltage. The groove grating type right angle composite grating field plate heterogeneous junction device comprises a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), a table board (6), a grating groove (7), a grid electrode (8), a passive layer (9) and a protection layer (13), wherein a groove (10) is engraved in the passive layer (9), the groove (10) is completely filled with high dielectric constant media (11), a cross-line-shaped grating field plate (12) is deposited between the protection layer (13) and the protection layer (13), the edge of one side of the cross-line-shaped grating field plate (12), close to the grid electrode (8), is aligned to the edge of one side of the groove (10), close to the grid electrode (8), the cross-line-shaped grating field plate (12) and the high dielectric constant media (11) form a right angle composite grating field plate, and the cross-line-shaped grating field plate (12) is electrically connected with the grid electrode (8). The groove grating type right angle composite grating field plate heterogeneous junction device has the advantages of being simple in manufacture process, high in breakdown voltage, high in reliability and high in rate of finished products, and can be used as a switch device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a groove gate type right-angle composite gate field plate heterojunction device, which can be used as a basic device of a power electronic system. technical background [0002] Power semiconductor devices are important components of power electronic systems and effective tools for power processing. In recent years, as energy and environmental issues have become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. However, in the research of power devices, there is a serious constraint relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this constraint relationship is the key to improving the overall performance of the device. As the market continues to put fo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/40H01L29/778H01L21/335H01L21/28
CPCH01L29/401H01L29/402H01L29/66462H01L29/778
Inventor 毛维佘伟波张延涛葛安奎杨翠郝跃
Owner XIDIAN UNIV
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