Dielectric Modulation Composite Cross-Gate Power Device

A power device and overlapping gate technology, applied in the field of microelectronics, can solve the problems of complex structure and manufacturing process, reduce device yield, tedious process debugging, etc., and achieve the effects of improving distribution, improving reliability, and reducing electric field

Active Publication Date: 2017-03-01
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the structure and manufacturing process of GaN-based double-layer field plate HEMT devices are too complicated, and the manufacturing cost is high. The fabrication of each field plate requires process steps such as photolithography, metal deposition, and passivation dielectric deposition.
Moreover, in order to optimize the thickness of the dielectric material under the field plates of each layer to maximize the breakdown voltage, tedious process debugging and optimization must be carried out, which greatly increases the difficulty of device manufacturing and reduces the yield of devices.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Embodiment 1: The production substrate is sapphire, and the insulating dielectric layer is SiO 2 , the passivation layer is Al 2 o 3 , the protective layer is SiN, and the high dielectric constant dielectric is HfO 2 , the cross gate is a dielectric modulation compound cross gate power device with Ti / Mo / Au metal combination.

[0043] Step 1. On the sapphire substrate 1, make the transition layer 2 by epitaxial GaN material from bottom to top, such as image 3 a.

[0044] An undoped transition layer 2 with a thickness of 1 μm is epitaxially formed on the sapphire substrate 1 by metal organic chemical vapor deposition technology, and the transition layer is composed of GaN materials with thicknesses of 30 nm and 0.97 μm from bottom to top. The process conditions used for the epitaxial lower layer GaN material are: temperature 530°C, pressure 45 Torr, hydrogen gas flow rate 4400 sccm, ammonia gas flow rate 4400 sccm, gallium source flow rate 22 μmol / min; the process co...

Embodiment 2

[0065] Embodiment 2: The substrate is made of silicon carbide, and the insulating dielectric layer is HfO 2 , the passivation layer is SiO 2 , the protective layer is SiN, and the high dielectric constant dielectric is Al 2 o 3 , the cross gate is a dielectric modulation compound cross gate power device with Ti / Ni / Au metal combination.

[0066] Step 1. Epitaxially AlN and GaN materials on the silicon carbide substrate 1 to form the transition layer 2, such as image 3 a.

[0067] 1.1) Using metal-organic chemical vapor deposition technology to epitaxially undoped AlN material with a thickness of 50nm on the silicon carbide substrate 1; the process conditions for the epitaxy are: temperature is 1000°C, pressure is 45Torr, hydrogen flow rate is 4600sccm, The flow rate of ammonia gas is 4600 sccm, and the flow rate of aluminum source is 5 μmol / min;

[0068] 1.2) Using metal-organic chemical vapor deposition technology to epitaxially GaN material with a thickness of 2.45 μm o...

Embodiment 3

[0102] Embodiment three: making substrate is silicon, insulating dielectric layer is Al 2 o 3 , the passivation layer is SiO 2 , the protective layer is SiN, and the high dielectric constant dielectric is HfO 2 , the cross gate is a dielectric modulation compound cross gate power device with Ti / Pt / Au metal combination.

[0103] Step A. Epitaxial AlN and GaN materials on the silicon substrate 1 from bottom to top to make the transition layer 2, such as image 3 a.

[0104] A1) Using metal-organic chemical vapor deposition technology at a temperature of 800° C., a pressure of 40 Torr, a flow rate of hydrogen gas of 4000 sccm, a flow rate of ammonia gas of 4000 sccm, and a flow rate of aluminum source of 25 μmol / min, the epitaxy on the silicon substrate 1 AlN material with a thickness of 200nm;

[0105] A2) Using metal-organic chemical vapor deposition technology at a temperature of 980°C, a pressure of 45 Torr, a flow rate of hydrogen gas of 4000 sccm, a flow rate of ammoni...

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PUM

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Abstract

The invention discloses a medium-modulation power device of a composite overlapping gate. The medium-modulation power device of the composite overlapping gate is mainly used for solving the problem that the process for realizing high breakdown voltage is complex in the existing field plate technology. The medium-modulation device of the composite overlapping gate comprises a substrate (1), a transition layer (2), a barrier layer (3), a table board (6), an insulating medium layer (7), a passivation layer (8) and a protective layer (13), wherein a source electrode (4) and a drain electrode (5) are deposited on the barrier layer (3); a gate slot (9) and a groove (10) are etched in the passivation layer (8); the grid slot is close to the source electrode, the groove is close to the drain electrode, the depth of the grid slot is equal to the thickness of the passivation layer; a high dielectric constant medium (11) is completely filled in the groove (10); overlapping gates (12) are deposited on the upper part of the passivation layer in the grid slot between the grid slot and the drain electrode, and on the upper part of the high dielectric constant medium; the high dielectric constant medium and the overlapping gates form a composite overlapping gate. The medium-modulation power device of the composite overlapping gate has the advantages of a simple process, high breakdown voltage, high field plate efficiency, high reliability and high yield.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular to a dielectric modulation composite overlapping gate power device, which can be used as a basic device of a power electronic system. [0002] technical background [0003] Power semiconductor devices are important components of power electronic systems and effective tools for power processing. In recent years, as energy and environmental issues have become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. However, in the research of power devices, there is a serious constraint relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this constraint relationship is the key to improving the overall performance of the device. As the m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/423H01L21/336
CPCH01L29/42356H01L29/66477H01L29/78
Inventor 毛维葛安奎郝跃边照科石朋毫张进成马晓华张金风杨林安曹艳荣
Owner XIDIAN UNIV
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