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High electron mobility device for trench gate type source field board and manufacturing method therefor

A high electron mobility, source field plate technology, applied in the field of microelectronics, can solve the problems of reducing the yield of the device, complicated manufacturing process, tedious process debugging, etc., and achieve the effect of reducing the electric field, improving the breakdown voltage and enhancing the reliability.

Active Publication Date: 2009-04-29
云南凝慧电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the manufacturing process of stacked field plate high electron mobility devices is relatively complicated. Each additional layer of field plate requires additional process steps such as photolithography, metal deposition, insulating dielectric material deposition, stripping, and cleaning, and it is necessary to make each layer The insulating dielectric material deposited under the field plate has an appropriate thickness, and cumbersome process debugging must be carried out, which greatly increases the difficulty of device manufacturing and reduces the yield of devices

Method used

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  • High electron mobility device for trench gate type source field board and manufacturing method therefor
  • High electron mobility device for trench gate type source field board and manufacturing method therefor
  • High electron mobility device for trench gate type source field board and manufacturing method therefor

Examples

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Effect test

Embodiment 1

[0057] The production substrate is sapphire, and the passivation layer is SiO 2 , the protective layer is SiN, the source field plate and each floating field plate are Ti / Au metal combination groove gate type source field plate high electron mobility device, the process is:

[0058] 1. Using metal organic chemical vapor deposition technology to epitaxially undoped transition layer 2 with a thickness of 1 μm on the sapphire substrate 1, the transition layer is composed of AlN material with a thickness of 22 nm and GaN material with a thickness of 0.978 μm from bottom to top constitute. The process conditions used for the epitaxial lower layer AlN material are: temperature 565°C, pressure 40 Torr, hydrogen gas flow rate 4200 sccm, ammonia gas flow rate 4200 sccm, aluminum source flow rate 20 μmol / min; the process conditions for the epitaxial upper layer GaN material are: temperature 950°C, the pressure is 40 Torr, the flow rate of hydrogen gas is 4200 sccm, the flow rate of amm...

Embodiment 2

[0067] The production substrate is silicon carbide, the passivation layer is SiN, and the protective layer is SiO 2 , the source field plate and each floating field plate are Ni / Au metal combined groove gate type source field plate high electron mobility device, the process is:

[0068] 1. Use metal organic chemical vapor deposition technology to epitaxially have an undoped transition layer 2 with a thickness of 2.5 μm on a silicon carbide substrate 1. The transition layer is composed of an AlN material with a thickness of 50 nm and an AlN material with a thickness of 2.45 μm from bottom to top. Made of GaN material. The process conditions used for the epitaxial lower layer AlN material are: temperature 1020°C, pressure 45 Torr, hydrogen gas flow rate 4800 sccm, ammonia gas flow rate 4800 sccm, aluminum source flow rate 12 μmol / min; the process conditions for the epitaxial upper layer GaN material are: temperature 1020°C, the pressure is 45 Torr, the flow rate of hydrogen gas...

Embodiment 3

[0077] The production substrate is silicon, and the passivation layer is Al 2 o 3 , the protective layer is SiN, the source field plate and each floating field plate are Pt / Au metal combination groove gate type source field plate high electron mobility device, the process is:

[0078] 1. Using metal organic chemical vapor deposition technology to epitaxially undoped transition layer 2 with a thickness of 5 μm on the silicon substrate 1, the transition layer is composed of AlN material with a thickness of 125 nm and GaN material with a thickness of 4.875 μm from bottom to top constitute. The process conditions used for the epitaxial lower layer AlN material are: temperature 860 °C, pressure 50 Torr, hydrogen gas flow rate 4900 sccm, ammonia gas flow rate 4900 sccm, aluminum source flow rate 35 μmol / min; the process conditions used for the epitaxial upper layer GaN material are: temperature 1050°C, pressure 50 Torr, hydrogen gas flow rate 4900 sccm, ammonia gas flow rate 4900 ...

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Abstract

The invention discloses a groove-gate type source field plate device with high electron mobility and a fabrication method thereof. The device comprises, from bottom to top, a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), a groove gate (7), a passivation layer (8), a source field plate (9) and a protection layer (11); the groove gate (7) is arranged in a groove (6) of the barrier layer, the source field plate (9) is electrically connected with the source electrode (4), wherein, n floating field plates (10) are deposited on the passivation layer (8), the floating field plates and the source field plate are positioned at the same level. The floating field plate have the same size and are mutually independent, and the spacing between two adjacent floating field plates successively increases based on the number of the floating field plates arranged along the direction from the source field plate to the drain electrode. The n floating field plates and the source field plate are completed on the passivation layer by one time process. The device has the advantages of simple process, high output power and good reliability, and the device and the method can be used for fabricating microwave power devices based on a compound semiconductor material heterojunction.

Description

technical field [0001] The invention belongs to the field of microelectronics technology, and relates to semiconductor devices, in particular to a groove-gate type source field plate high electron mobility device based on a heterojunction structure of III-V compound semiconductor materials, which can be used as a microwave, millimeter wave communication system and a radar system basic device. technical background [0002] As is well known in the industry, semiconductor materials composed of group III elements and group V elements, that is, group III-V compound semiconductor materials, such as gallium nitride (GaN)-based, gallium arsenide (GaAs)-based, indium phosphide (InP)-based And other semiconductor materials, their bandgap widths are often quite different, so people usually use these III-V compound semiconductor materials to form various heterojunction structures. Due to the large difference in the bandgap of III-V compound semiconductor materials on both sides of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/06H01L21/335
Inventor 毛维杨翠郝跃过润秋
Owner 云南凝慧电子科技有限公司
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