Groove Gamma gate transistor with high electron mobility and preparing method thereof

A high electron mobility, transistor technology, applied in the field of microelectronics, can solve the problems of weakening device input and output isolation, reducing device yield, reducing device stability, etc., to reduce gate leakage current and improve breakdown voltage , the effect of large drain-source voltage

Inactive Publication Date: 2009-04-22
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the manufacturing process of the high electron mobility transistor using the stacked field plate structure is relatively complicated. Each additional layer of field plate requires additional process steps such as photolithography, metal deposition, insulating dielectric material deposition, stripping, and cleaning. To make the insulating dielectric material deposited under the field plates of each layer have an appropriate thickness, cumbersome process debugging must be carried out, thus greatly increasing the difficulty of device manufacturing and reducing the yield of devices
Another issue worthy of people's attention is that all high electron mobility transistors using a gate field plate structure will generate additional capacitance between the gate field plate and the two-dimensional electron gas channel, and this additional capacitance will be superimposed into the gate and the gate of the device. In the feedback capacitance between the drains, the feedback capacitance of the device increases, resulting in a certain attenuation of the power characteristics and frequency characteristics of the device.
In addition, the increase of the feedback capacitance of the device will weaken the isolation between the input and output of the device and reduce the stability of the device

Method used

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  • Groove Gamma gate transistor with high electron mobility and preparing method thereof
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  • Groove Gamma gate transistor with high electron mobility and preparing method thereof

Examples

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Effect test

Embodiment 1

[0053] The production substrate is sapphire, and the passivation layer is SiO 2 , the protective layer is SiO 2 , the Γ gate and each floating field plate is a grooved Γ gate high electron mobility transistor composed of Mo / Au metal, and the process is:

[0054] 1. Using metal organic chemical vapor deposition technology to epitaxially undoped transition layer 2 with a thickness of 1 μm on the sapphire substrate 1, the transition layer is composed of AlN material with a thickness of 45 nm and GaN material with a thickness of 0.955 μm from bottom to top constitute. The process conditions used for the epitaxial lower layer AlN material are: temperature 610°C, pressure 186 Torr, hydrogen gas flow rate 5000 sccm, ammonia gas flow rate 5000 sccm, aluminum source flow rate 45 μmol / min; the process conditions for the epitaxial upper layer GaN material are: the temperature is 1080°C, pressure 186 Torr, hydrogen gas flow rate 5000 sccm, ammonia gas flow rate 5000 sccm, gallium source...

Embodiment 2

[0063] The substrate is made of silicon carbide, the passivation layer is SiN, the protective layer is SiN, the Γ gate and each floating field plate are Ni / Au metal combination grooved Γ gate high electron mobility transistors, and the process is:

[0064] 1. An undoped transition layer 2 with a thickness of 1.7 μm is epitaxially formed on a silicon carbide substrate 1 by metal-organic chemical vapor deposition technology. Made of GaN material. The process conditions used for the epitaxial lower layer AlN material are: temperature 1050°C, pressure 190 Torr, hydrogen gas flow rate 5100 sccm, ammonia gas flow rate 5100 sccm, aluminum source flow rate 18 μmol / min; the process conditions for the epitaxial upper layer GaN material are: temperature 1050°C, pressure 190 Torr, hydrogen gas flow rate 5100 sccm, ammonia gas flow rate 5100 sccm, gallium source flow rate 190 μmol / min.

[0065] 2. Deposit an undoped barrier layer 3 with a thickness of 29nm on the GaN transition layer 2 by...

Embodiment 3

[0073] The production substrate is silicon, the passivation layer is SiN, and the protective layer is Al 2 o 3 , the Γ gate and each floating field plate are Pt / Au metal combined groove Γ gate high electron mobility transistors, and the process is:

[0074] 1. Using metal organic chemical vapor deposition technology to epitaxially undoped transition layer 2 with a thickness of 5 μm on the silicon substrate 1, the transition layer is composed of AlN material with a thickness of 140 nm and GaN material with a thickness of 4.86 μm from bottom to top constitute. The process conditions used for the epitaxial lower layer AlN material are: temperature 890 °C, pressure 193 Torr, hydrogen gas flow rate 5200 sccm, ammonia gas flow rate 5200 sccm, aluminum source flow rate 45 μmol / min; the process conditions used for the epitaxial upper layer GaN material are: temperature 1080°C, pressure 193 Torr, hydrogen flow rate 5200 sccm, ammonia gas flow rate 5200 sccm, gallium source flow rate ...

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Abstract

The invention discloses a groove gamma gate transistor with high electron mobility and a fabrication method thereof. The transistor comprises, from bottom to top, a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a drain electrode (5), a passivation layer (7), a gamma gate (9) and a protection layer (11); a first groove (6) is opened on the barrier layer (3), a second groove (8) is opened on the passivation layer (7), wherein, n floating field plates (10) are deposited on the passivation layer (7) (n is not less than 1), and the floating field plates and the gamma-gate form a composite gate field plate structure. All the floating field plates have the same size and are mutually independent, and the distance between two adjacent floating field plates increases based on the number of the floating field plates arranged along the direction from the gamma gate to the drain electrode. The n floating field plates are in a floating state and are completed together with the gamma gate by one-time process. The groove gamma gate transistor has the advantages of high yield, good frequency characteristic and high output power, and the groove gamma gate transistor and the fabrication method can be used for fabricating high-frequency high power devices based on III-V group compound semiconductor heterojunction structure.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to semiconductor devices, in particular to a grooved Γ-gate high electron mobility transistor based on the heterojunction structure of III-V compound semiconductor materials, which can be used as a microwave, millimeter wave communication system and radar system. basic device. technical background [0002] As is well known in the industry, semiconductor materials composed of group III elements and group V elements, that is, group III-V compound semiconductor materials, such as gallium nitride (GaN)-based, gallium arsenide (GaAs)-based, indium phosphide (InP)-based And other semiconductor materials, their bandgap widths are often quite different, so people usually use these III-V compound semiconductor materials to form various heterojunction structures. Due to the large difference in the band gap of III-V compound semiconductor materials on both sides of the heterojunction i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/06H01L21/335
Inventor 郝跃毛维过润秋杨翠
Owner XIDIAN UNIV
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