The invention discloses a high-reliability FBAR (thin-film bulk acoustic resonator), which is characterized in that an isolation layer is arranged on the whole substrate, and an air cavity, which sinks downward from the upper surface of the substrate, is arranged between the substrate and the isolation layer; a lower electrode, a piezoelectric layer and an upper electrode are arranged on the isolation layer, and a passivation layer, which at least covers an exposed portion of the whole upper electrode and/or the lower electrode, is arranged on the upper electrode. Compared with an existing FBAR, the FBAR disclosed by the invention is additionally provided with the isolation layer, which is identical to the substrate in size, on the substrate. On the one hand, requirements for a substrate material in the aspect of resistivity can be reduced, thereby reducing the cost of the substrate; and on the other hand, isolation between the substrate and a device can be improved under the premise of not changing the substrate material, thereby improving the open-circuit impedance of the resonator. The FBAR disclosed by the invention is further additionally provided with the passivation layer on the exposed portion of the upper electrode and/or the lower electrode, thereby being capable of effectively preventing influences brought to the device performance and the long-term reliability by modification such as oxidation and the like of the upper electrode and/or the lower electrode.