SiGe heterojunction bipolar transistor and preparation method thereof
A heterojunction bipolar and transistor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as incompatibility, and achieve the effect of improving electrical isolation and reducing punch-through
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[0012] In order to illustrate the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and accompanying drawings.
[0013] see figure 2 , figure 2 It is a cross-sectional view of the structure of the first SiGe heterojunction bipolar transistor 1 . The first SiGe heterojunction bipolar transistor 1 includes: a first substrate 11, a first collector region 12 grown on the first substrate 11, and a first shallow collector region 12 formed in the first collector region 12. Trench isolation 13, a first SiGe layer 14 epitaxially grown on the first collector region 12, a first base electrode 141 formed on the first SiGe layer 14, a first emitter region formed on the first SiGe layer 14 15. The first emitter electrode 151 formed on the first emitter region 15 and the first collector electrode 121 formed on the first collector region 12 . Wherein, the fir...
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