Vertical power device based on gate field plate and drain field plate and its manufacturing method

A technology of power devices and leakage field plates, which is applied in the field of microelectronics, can solve problems such as large drain-source leakage current, device failure, and the inability of the field plate structure to effectively modulate the electric field distribution in the device, so as to improve the breakdown voltage and increase the area Effect

Active Publication Date: 2020-04-14
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, up to now, there is still no precedent of the field plate structure being successfully applied to GaN-based current aperture heterojunction field effect devices at home and abroad. This is mainly due to the inherent defects in the structure of GaN-based current aperture heterojunction field effect devices. As a result, the strongest electric field peak in the device drift layer is located near the interface between the current blocking layer and the aperture layer, and the electric field peak is far away from the surfaces on both sides of the drift layer, so the field plate structure can hardly play the role of effectively modulating the electric field distribution in the device, even in GaN The field plate structure is used in the base current aperture heterojunction field effect device, and there is almost no improvement in device performance
[0009] In addition, the existing GaN-based current aperture heterojunction field effect devices all use ohmic drains. When a very low reverse voltage is applied to the device drain, the current blocking layer in the device will fail, forming a large drain-source Leakage current, and as the drain reverse voltage increases, the device gate will also open forward, and a large gate current will pass, eventually leading to device failure
Therefore, none of the existing GaN-based current aperture heterojunction field effect devices can realize the reverse blocking function. break feature has no effect

Method used

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  • Vertical power device based on gate field plate and drain field plate and its manufacturing method
  • Vertical power device based on gate field plate and drain field plate and its manufacturing method
  • Vertical power device based on gate field plate and drain field plate and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] Embodiment 1: Fabricate a vertical power device based on a grid field plate and a drain field plate with a stepped grid field plate with three steps and a stepped drain field plate with two steps.

[0077] Step 1. Epitaxial n on substrate 1 - type GaN, forming a drift layer 2, such as image 3 a.

[0078] use n - Type GaN is used as the substrate 1, and the epitaxial thickness is 100 μm and the doping concentration is 1×10 15 cm -3 the n - type GaN semiconductor material to form a drift layer 2, wherein:

[0079] The process conditions used for epitaxy are: the temperature is 950°C, the pressure is 40Torr, and the SiH 4 As the doping source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the flow rate of gallium source is 100 μmol / min.

[0080] Step 2. Epitaxial n-type GaN on the drift layer to form an aperture layer 3, such as image 3 b.

[0081] Using metal-organic chemical vapor deposition technology, the epitaxia...

Embodiment 2

[0137] Embodiment 2: Fabricate a vertical power device based on a grid field plate and a drain field plate with a stepped grid field plate with two steps and a stepped drain field plate with three steps.

[0138] Step 1. Epitaxial n on substrate 1 - type GaN, forming a drift layer 2, such as image 3 a.

[0139] At a temperature of 1000°C and a pressure of 45Torr, SiH 4 is the dopant source, the flow rate of hydrogen gas is 4400 sccm, the flow rate of ammonia gas is 4400 sccm, and the flow rate of gallium source is 110 μmol / min. - Type GaN is used as the substrate 1, and the epitaxial thickness is 30 μm and the doping concentration is 4×10 16 cm -3 the n - type GaN material to complete the fabrication of the drift layer 2 .

[0140] The second step. Epitaxial n-type GaN on the drift layer to form the aperture layer 3, such as image 3 b.

[0141] At a temperature of 1000°C and a pressure of 45Torr, SiH 4 As the doping source, the flow rate of hydrogen gas is 4400sccm, t...

Embodiment 3

[0186] Embodiment 3: Fabricate a vertical power device based on a grid field plate and a drain field plate with a stepped grid field plate with two steps and a stepped drain field plate with two steps.

[0187] Step A. The temperature is 950°C, the pressure is 40Torr, and SiH 4 As the doping source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the flow rate of gallium source is 100 μmol / min. - Type GaN is used as the substrate 1, and the epitaxial thickness is 5 μm and the doping concentration is 1×10 18 cm -3 the n - Type GaN material, making drift layer 2, such as image 3 a.

[0188] Step B. The temperature is 950°C, the pressure is 40Torr, and SiH 4 is the dopant source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the flow rate of gallium source is 100 μmol / min. Using metal organic chemical vapor deposition technology, the epitaxial thickness on the drift layer 2 is 3 μm, and ...

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Abstract

The invention discloses a vertical power device based on a gate field plate and a drain field plate. The vertical power device comprises a Schottky drain (11), a substrate (1), a drift layer (2), an aperture layer (3), two symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7) and a grid (10) from bottom to top; source grooves (8) are carved at two sides of the channel layer and the barrier layer; sources (9) are deposited in the source grooves; a passivation layer (12) wraps all areas, except the bottom of the Schottky drain; an aperture (5) is between the current blocking layers; a two-stage step structure is adopted in the two current blocking layers; gate steps and drain steps are respectively carved at the upper part and the back at two sides of the passivation layer; metal is deposited on the steps; therefore, a step gate field plate (13) and a step drain filed plate (14) are formed; and the step gate field plate and the step drain filed plate are electrically connected with the grid and the Schottky drain separately. The vertical power device disclosed by the invention has high two-way breakdown voltage, low conduction resistance and high yield, and can be used for power electronic systems.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, especially a vertical power device based on a gate field plate and a drain field plate, which can be used in a power electronic system. [0002] technical background [0003] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the performance of traditional firs...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/40H01L29/778H01L21/335
CPCH01L29/0634H01L29/404H01L29/66462H01L29/7788
Inventor 毛维杨翠艾治州郝跃郑雪峰
Owner XIDIAN UNIV
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