T-shaped source-drain compound field plate power device

Abstract

The invention discloses a T-shaped source-drain composite field plate power device, and mainly solves the problem that the process is complicate when high breakdown voltage is realized in the prior art of field plates. The T-shaped source-leakage composite field plate power device comprises a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a Schottky drain electrode (5), a table board (6), a grating groove (7), a gate (8), a passivation layer (9) and a protection layer (14), wherein a source groove (10) and a drain groove (11) are formed in the passivation layer (9) in an etching manner, and a T-shaped source field plate (12) and a T-shaped drain field plate (13) are deposited between the passivation layer (9) and the protection layer (14); the T-shaped source field plate (12) is electrically connected with the source electrode (4), and the source groove (10) is fully filled with the lower end of the T-shaped source field plate (12); the T-shaped drain field plate (13)is electrically connected with the Schottky drain electrode (5), and the drain groove (11) is fully filled with the lower end of the T-shaped drain field plate (13). The T-shaped source-drain composite field plate power device has the advantages that the manufacturing process is simple, the forward characteristic and the reverse characteristic are good and the yield is high and can serve as a switching device.

Description

technical field

[0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, especially a T-shaped source-drain compound field plate power device, which can be used as a basic device of a power electronic system.

[0002] technical background

[0003] Power semiconductor devices are important components of power electronic systems and effective tools for power processing. In recent years, as energy and environmental issues have become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. However, in the research of power devices, there is a serious constraint relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this constraint relationship is the key to improving the overall performance of the device. As the market contin...

Examples

Embodiment 1

[0048] Embodiment one: making substrate is sapphire, and passivation layer is Al 2 o 3 , the protective layer is SiO 2 , the T-shaped source field plate and the T-shaped drain field plate are T-shaped source-drain compound field plate power devices composed of Ti / Mo / Au metal.

[0049] Step 1. On the sapphire substrate 1, make the transition layer 2 by epitaxial GaN material from bottom to top, such as image 3 a.

[0050] An undoped transition layer 2 with a thickness of 1 μm is epitaxially formed on the sapphire substrate 1 by metal organic chemical vapor deposition technology, and the transition layer is composed of GaN materials with thicknesses of 30 nm and 0.97 μm from bottom to top. The process conditions used for the epitaxial lower layer GaN material are: temperature 530°C, pressure 45 Torr, hydrogen gas flow rate 4400 sccm, ammonia gas flow rate 4400 sccm, gallium source flow rate 22 μmol / min; the process conditions for the epitaxial upper layer GaN material are: t...

Embodiment 2

[0071] Embodiment 2: The substrate is made of silicon carbide, and the passivation layer is SiO 2 , the protective layer is SiN, the T-shaped source field plate and the T-shaped drain field plate are a T-shaped source-drain composite field plate power device composed of Ti / Ni / Au metal.

[0072] Step 1. Epitaxially AlN and GaN materials on the silicon carbide substrate 1 to form the transition layer 2, such as image 3 a.

[0073] 1.1) Using metal-organic chemical vapor deposition technology to epitaxially undoped AlN material with a thickness of 50nm on the silicon carbide substrate 1; the process conditions for the epitaxy are: temperature is 1000°C, pressure is 45Torr, hydrogen flow rate is 4600sccm, The flow rate of ammonia gas is 4600 sccm, and the flow rate of aluminum source is 5 μmol / min;

[0074] 1.2) Using metal-organic chemical vapor deposition technology to epitaxially GaN material with a thickness of 2.45 μm on the AlN material to complete the fabrication of the ...

Embodiment 3

[0108] Embodiment three: the substrate is made of silicon, the passivation layer is SiN, and the protective layer is SiO 2 , the T-shaped source field plate and the T-shaped drain field plate are T-shaped source-drain composite field plate power devices composed of Ti / Pt / Au metal.

[0109] Step A. Epitaxial AlN and GaN materials on the silicon substrate 1 from bottom to top to make the transition layer 2, such as image 3 a.

[0110] A1) Using metal-organic chemical vapor deposition technology at a temperature of 800° C., a pressure of 40 Torr, a flow rate of hydrogen gas of 4000 sccm, a flow rate of ammonia gas of 4000 sccm, and a flow rate of aluminum source of 25 μmol / min, the epitaxy on the silicon substrate 1 AlN material with a thickness of 200nm;

[0111] A2) Using metal-organic chemical vapor deposition technology at a temperature of 980°C, a pressure of 45 Torr, a flow rate of hydrogen gas of 4000 sccm, a flow rate of ammonia gas of 4000 sccm, and a flow rate of gal...

technical field

[0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, especially a T-shaped source-drain compound field plate power device, which can be used as a basic device of a power electronic system.

[0002] technical background

[0003] Power semiconductor devices are important components of power electronic systems and effective tools for power processing. In recent years, as energy and environmental issues have become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. However, in the research of power devices, there is a serious constraint relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this constraint relationship is the key to improving the overall performance of the device. As the market contin...

Examples

Embodiment 1

[0048] Embodiment one: making substrate is sapphire, and passivation layer is Al 2 o 3 , the protective layer is SiO 2 , the T-shaped source field plate and the T-shaped drain field plate are T-shaped source-drain compound field plate power devices composed of Ti / Mo / Au metal.

[0049] Step 1. On the sapphire substrate 1, make the transition layer 2 by epitaxial GaN material from bottom to top, such as image 3 a.

[0050] An undoped transition layer 2 with a thickness of 1 μm is epitaxially formed on the sapphire substrate 1 by metal organic chemical vapor deposition technology, and the transition layer is composed of GaN materials with thicknesses of 30 nm and 0.97 μm from bottom to top. The process conditions used for the epitaxial lower layer GaN material are: temperature 530°C, pressure 45 Torr, hydrogen gas flow rate 4400 sccm, ammonia gas flow rate 4400 sccm, gallium source flow rate 22 μmol / min; the process conditions for the epitaxial upper layer GaN material are: t...

Embodiment 2

[0071] Embodiment 2: The substrate is made of silicon carbide, and the passivation layer is SiO 2 , the protective layer is SiN, the T-shaped source field plate and the T-shaped drain field plate are a T-shaped source-drain composite field plate power device composed of Ti / Ni / Au metal.

[0072] Step 1. Epitaxially AlN and GaN materials on the silicon carbide substrate 1 to form the transition layer 2, such as image 3 a.

[0073] 1.1) Using metal-organic chemical vapor deposition technology to epitaxially undoped AlN material with a thickness of 50nm on the silicon carbide substrate 1; the process conditions for the epitaxy are: temperature is 1000°C, pressure is 45Torr, hydrogen flow rate is 4600sccm, The flow rate of ammonia gas is 4600 sccm, and the flow rate of aluminum source is 5 μmol / min;

[0074] 1.2) Using metal-organic chemical vapor deposition technology to epitaxially GaN material with a thickness of 2.45 μm on the AlN material to complete the fabrication of the ...

Embodiment 3

[0108] Embodiment three: the substrate is made of silicon, the passivation layer is SiN, and the protective layer is SiO 2 , the T-shaped source field plate and the T-shaped drain field plate are T-shaped source-drain composite field plate power devices composed of Ti / Pt / Au metal.

[0109] Step A. Epitaxial AlN and GaN materials on the silicon substrate 1 from bottom to top to make the transition layer 2, such as image 3 a.

[0110] A1) Using metal-organic chemical vapor deposition technology at a temperature of 800° C., a pressure of 40 Torr, a flow rate of hydrogen gas of 4000 sccm, a flow rate of ammonia gas of 4000 sccm, and a flow rate of aluminum source of 25 μmol / min, the epitaxy on the silicon substrate 1 AlN material with a thickness of 200nm;

[0111] A2) Using metal-organic chemical vapor deposition technology at a temperature of 980°C, a pressure of 45 Torr, a flow rate of hydrogen gas of 4000 sccm, a flow rate of ammonia gas of 4000 sccm, and a flow rate of gal...

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