Composite field plate power device based on right angle source field plate and right angle drain field plate

Abstract

The invention discloses a complex field plate power device based on a right-angled source field plate and a right-angled drain field plate. The complex field plate power device comprises a substrate (1), a transition layer (2), a barrier layer (3), a source electrode (4), a Walter Schottky drain electrode (5), a table top (6), a gate electrode (7), a passivation layer (8) and a protective layer (13). A gate groove (9) and a drain groove (10) are etched in the passivation layer; the right-angled source field plate (11) and the right-angled drain field plate (12) are deposited between the passivation layer (8) and the protective layer (13); the right-angled source field plate is electrically connected with the source electrode and the lower end is completely filled in a source groove; the right-angled drain field plate is electrically connected with the Walter Schottky drain electrode and the lower end is completely filled in a drain groove; the edge of the right-angled source field plate close to one side of the gate electrode aligns with that of the source groove close to one side of the gate electrode; and the edge of the right-angled drain field plate close to one side of the Walter Schottky drain electrode aligns with that of the drain groove close to one side of the Walter Schottky drain electrode. The complex field plate power device has the advantages of simple manufacturing process, good forward characteristics and reverse characteristics and high rate of finished products and can be used as a switch device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular a compound field plate power device based on a right-angle source field plate and a right-angle drain field plate, which can be used as a basic device of a power electronic system. [0002] technical background [0003] Power semiconductor devices are important components of power electronic systems and effective tools for power processing. In recent years, as energy and environmental issues have become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. However, in the research of power devices, there is a serious constraint relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this constraint relationship is the key to improving t...

AI Technical Summary

Problems solved by technology

However, the process of double-layer field plate HEMT power devices is complicated and the manufacturing cost is higher. The fabrication of each layer of field plate requires process steps such as photolithography, metal deposition, and passivation dielectric deposition.

Moreover, in order to optimize the thickness of the dielectric material under the field plates of each layer to maximize the breakdown voltage, tedious process debugging and optimization must be carried out, which greatly increases the difficulty of device manufacturing and reduces the yield of devices.

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