Source-drain compound field plate vertical power electronic device

Abstract

The invention discloses a source-drain composite field plate vertical type power electronic device. The vertical type power electronic device comprises a schottky drain (11), a substrate (1), a drifting layer (2), an aperture layer (3), two symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7) and a gate (10) from the bottom up; two sources (9) are deposited on the two sides of the barrier layer; two injection regions (8) are arranged below the two sources; all regions, except the schottky drain bottom, are covered with a passivation layer (12); an aperture (5) is formed between the two current blocking layers; the current blocking layers adopt a two-stage-step structure; an integral number of source steps and drain steps are etched on the upper part and the back surface of the left and right sides of the passivation layer respectively; metal is deposited on the steps to form a source field plate (13) and a drain field plate (14) respectively; and the source field plate is electrically connected with the sources while the drain field plate is electrically connected with the drain. The vertical type power electronic device has high bidirectional blocking function, low conduction resistance and high rate of finished products, and can be used for a power electronic system.

Description

technical field

[0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor device, in particular to a source-drain compound field plate vertical power electronic device, which can be used in a power electronic system.

[0002] technical background

[0003] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the performance of traditional firs...

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