Current aperture heterojunction transistor based on drain field plate and its manufacturing method

Abstract

The invention discloses a current aperture hetero-junction transistor based on a drain field plate, and a manufacturing method thereof. The current aperture hetero-junction transistor comprises a substrate (1), a drift layer (2), an aperture layer (3), current blocking layers (4), a channel layer (6) and a barrier layer (7); sources (11) are deposited at two sides of the barrier layer; a cap layer (8) extends on the barrier layer between the sources; steps (9) are carved at two sides of the cap layer; a grid (12) is deposited on the cap layer; an aperture (5) is formed between the two current blocking layers; a Schottky drain (13) is deposited below the substrate; a passivation layer (14) wraps all areas, except the bottom of the Schottky drain; steps are carved at two sides of the back of the passivation layer; metal is deposited on the steps; therefore, a slant field plate (15) is formed; the slant field plate is electrically connected with the Schottky drain; and a protective layer (16) fully fills the bottom of the slant field plate. The current aperture hetero-junction transistor disclosed by the invention has high reverse breakdown voltage, simple process, low conduction resistance and high yield, and can be used for power electronic systems.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular to a current aperture heterojunction transistor based on a drain field plate, which can be used in a power electronic system. [0002] technical background [0003] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the performance of traditional ...

AI Technical Summary

Problems solved by technology

However, up to now, there is still no precedent for the successful application of the drain field plate structure in GaN-based current aperture heterojunction transistors at home and abroad.

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