103 results about "Electron pair" patented technology

The invention discloses a method for preparing a polyvinyl polyamide composite reverse osmosis membrane by coupling reversed-phase interfacial polymerization with lignosulfonate, which adopts a reversed-phase interfacial polymerization method and comprises the following steps: firstly adding an oil phase containing polyacyl chloride, and then adding a water phase containing amine monomers and lignosulfonate. Molecules of the lignosulfonate contain more sulfonate radicals, so that the lignosulfonate is endowed with hydrophilicity, meanwhile, a large number of active functional groups such as phenolic hydroxyl groups, alcoholic hydroxyl groups and carboxymethyl exist, and oxygen atoms, sulfur atoms and the like in the functional groups contain unbonded electron pairs and can participate in interfacial polymerization reaction to form a cross-linked structure; the trade-off effect of the flux and the rejection rate of the reverse osmosis membrane is broken, and the polyvinyl polyamide reverse osmosis membrane with high flux and high rejection rate is obtained. The raw material of the polyethylene base material is low in price, and the product can be applied to the fields of water treatment, seawater desalination, brackish water desalination and the like on a large scale.

The invention belongs to the technical field of solar cells, and particularly relates to a wide-band-gap perovskite solar cell with high open-circuit voltage and a method of the wide-band-gap perovskite solar cell. Derivative molecules of ethylenediamine and phenylethylamine and corresponding halide salt materials thereof are introduced below a perovskite light absorption layer of the wide-band-gap perovskite solar cell to serve as a buried interface modification layer, so that the performance of the cell is remarkably improved. Derivative molecules of ethanediamine and phenylethylamine and corresponding halide salt materials thereof can provide free electron pairs, and form a stable coordination structure with uncoordinated Pb < 2 + > ions in perovskite, thereby realizing regulation and control of perovskite crystallization kinetics. According to the invention, the crystallization quality of the wide-band-gap perovskite thin film is improved, and the method has the potential of promoting rapid development of an efficient three-junction laminated cell technology.

The invention relates to a method for stripping an epitaxial layer. The method for stripping the epitaxial layer comprises the following steps: providing a sample to be stripped; wherein the to-be-stripped sample comprises a substrate and an epitaxial layer which are stacked in the thickness direction; the conduction types of the substrate and the epitaxial layer are opposite; soaking a to-be-stripped sample in the etching liquid, wherein the to-be-stripped sample is used as a working electrode; irradiating the to-be-stripped sample by adopting a light source with a preset wavelength, so that the to-be-stripped sample generates a hole-electron pair; and in the irradiation process, a preset constant forward potential is provided for the to-be-stripped sample. According to the invention, the repeated utilization rate of the monitoring chip can be effectively improved, so that the production cost of the chip is reduced.

The invention belongs to the technical field of coke oven gas purification treatment, and particularly discloses a method for removing hydrogen sulfide in coke oven gas through photocatalysis, generation of oxygen vacancies is promoted by adopting a synthesis concept of synergistic effect of silver doping and polyethyleneimine, polyethyleneimine provides an alkaline condition on one hand, lone electron pairs on nitrogen are coordinated with zinc on the other hand, and the hydrogen sulfide in the coke oven gas is removed through photocatalysis. The preparation method comprises the following steps: by taking H2S and polyethyleneimine as raw materials, generating abundant oxygen vacancies under the synergistic effect of the H2S and silver, preventing agglomeration of generated ZnO and increasing reaction sites by taking polyethyleneimine as a surfactant, and then promoting a cascade reaction between ZnO < 1-x > and H2S by taking abundant oxygen vacancies, so that a 1D / 3D-ZnS / ZnO heterojunction is generated in situ to further reduce recombination of photo-generated electron holes; the catalyst converts H2S into elemental sulfur through photo-induced electrons and holes, and a carbon disulfide solution is used for cleaning the catalyst to realize regeneration of the catalyst. The method provided by the invention not only improves the removal efficiency of H2S, but also reduces the operation cost and reduces environmental pollution.

The invention discloses an iron-carbon modified zirconium oxide composite photocatalyst as well as a preparation method and application thereof, and belongs to the technical field of wastewater treatment. According to the preparation method, firstly, waste nitrogen-containing biomass is used for replacing chemical reagents such as ethylenediamine to serve as raw materials to prepare carbon quantum dots (CQDs), and then Fe and CQDs are loaded on amorphous phase ZrO2 through a simple ultrasonic method. According to the preparation method disclosed by the invention, the stability of ZrO2 is retained, and meanwhile, the photo-response range of the composite material is successfully extended by utilizing common modification of Fe and CQDs, oxygen vacancies (OVs) in the material are further increased, the separation of photo-induced electrons and holes is promoted, and the service life of interface carriers is prolonged, so that the photocatalytic performance of the composite material is remarkably improved. The high adsorption affinity of ZrO2 to glyphosate is utilized, and regulation and control of Fe and CQDs on hole electron pair separation and compounding are combined, so that the ZrO2, the Fe and the CQDs achieve a synergistic interaction effect, the goals of synergistic adsorption / photocatalytic degradation of glyphosate and reutilization are achieved, and the application of ZrO2 in the field of photocatalytic degradation of organic pollutants is expanded.

The invention discloses an electron beam accelerating tube and an electron beam accelerator, and relates to the technical field of electron beam accelerators. The electron beam accelerating tube comprises a first cavity and a suppression cavity, a first electromagnetic field can be generated in the first cavity, the first cavity is used for accelerating an electron beam emitted by an electron gun through the first electromagnetic field, and a leakage field is formed in the first electromagnetic field; the suppression cavity is arranged between the first cavity and the electron gun, a second electromagnetic field is built in the suppression cavity through the leakage field, the intensity of the second electromagnetic field is higher than that of the leakage field, and the second electromagnetic field is used for suppressing electrons in the electron beam from moving towards the electron gun. By applying the electron beam accelerating tube disclosed by the invention, the back bombardment phenomenon of electrons to the electron gun can be reduced, and the use performance and the service life of the electron gun are improved.

The invention relates to a one-dosage type copper-molybdenum display etching solution and a preparation method and application thereof. The etching liquid comprises the following components in parts by weight: 5-15 parts of hydrogen peroxide; 10 to 15 parts of organic acid; 8-12 parts of an organic base; 0.008 to 0.07 part of a chelating agent; 0.002 to 0.07 part of a corrosion inhibitor; 0.04 to 0.3 part of a surfactant; 0.1 to 0.6 part of a hydrogen peroxide stabilizer; and 65-73 parts of ultrapure water. The chelating agent and the corrosion inhibitor in the etching solution are jointly adsorbed on the metal surface, the corrosion inhibitor and the chelating agent can form intermolecular hydrogen bonds to obtain a product with larger molecular volume, the product is adsorbed on the metal surface to generate a protective isolation layer, and meanwhile, the contained delocalized large pi bonds and nitrogen atoms can provide electron pairs for empty orbits of metal, so that the metal surface is protected. And coordination bonds are formed to be adsorbed on the metal surface to form a compact adsorption film, so that the corrosion of the metal is effectively inhibited, and the taper angle and the etching morphology of the etched metal are stabilized.

The invention discloses a high-uniformity PCB pattern electroplating method based on pulse electroplating, and aims to solve the problem of insufficient copper thickness uniformity caused by residual copper rate difference, unreasonable process edge design, poor accompanying plating plate adaptability and direct current electroplating defects in traditional pattern electroplating. A plating block is arranged on the process edge of a PCB to share current, a special accompanying plating plate matched with the residual copper rate is configured to optimize an electric field, an electroplating solution containing Fe < 2 + > / Fe < 3 + > redox electron pairs and an insoluble titanium mesh anode are adopted, the two-step pulse electroplating process is combined, and the additive ratio and electroplating environment parameters are regulated and controlled, so that uniform deposition of a copper layer is achieved. The method effectively solves the problems that the local copper layer is too thick / too thin, and filling defects exist in the hole, and improves the reliability and signal transmission performance of the PCB coating.

Provided are a multilayer body and a production method for a printed wiring board. A multilayer body according to the present invention includes a metal foil that has a surface roughness Rz of no more than 2 μm as measured in accordance with JIS B0601 1994 at at least one surface and a layer that contains a resin composition and is provided on a surface of the metal foil that has a surface roughness Rz of no more than 2 μm. The resin composition includes a thermosetting compound and a compound that has an unshared electron pair, includes an aromatic ring, and has a melting point of at least 10°C. The thermosetting compound may also have an unshared electron pair.

A novel display panel is provided. The display panel includes a first light-emitting device, a second light-emitting device, and a partition wall. The first light-emitting device includes a first electrode, a second electrode, and a first layer sandwiched therebetween. The first layer contains a first organic compound and a first metal. The first organic compound includes an unshared electron pair. The first metal belongs to Group 5, Group 7, Group 9, Group 11, or Group 13. The second light-emitting device includes a third electrode, a fourth electrode, and a second layer sandwiched therebetween. The second layer contains the first organic compound and the first metal. A first space is provided between the second layer and the first layer. The partition wall has a first opening and a second opening. The partition wall overlaps with the first space between the first opening and the second opening.

Light-emitting diode (100, 200) with several quantum dots (10), having the light-emitting diode (100, 200): a first electrode (110, 210) and a second electrode (120, 220); an emitting material layer (150, 250); an electron transfer layer (164, 244); and a hole transfer layer (144, 264), wherein the emitting material layer (150, 250) is arranged between the electron transfer layer (164, 244) and the hole transfer layer (144, 264) and the emitting material layer (150, 250) has the quantum dots (10), where the quantum dots exhibit (10): a semiconductor nanocrystal or metal oxide core (20); a shell (30) covering the semiconductor nanocrystal or metal oxide core (20), wherein the shell (30) has an outer surface; an X-type ligand (42) having a functional group selected from the group consisting of a carboxylate group, a phosphate group and a thiolate group, which is bonded to a first region of the outer surface; and an L-type ligand (44) having a functional group selected from the group consisting of an amino group, a thiol group, a phosphine group and a phosphine oxide group, which is bonded to a second region of the outer surface, wherein the X-type ligand (42) is bound to the first region of the outer surface by a negatively charged functional group, and the L-type ligand (44) is bound to the second region of the outer surface by an undivided electron pair, wherein a multitude of the first regions of the outer surfaces of the quantum dots (10) are proximal to the hole transfer layer (144, 264) and distal to the electron transfer layer (164, 244), wherein a multitude of the second regions of the outer surfaces of the quantum dots (10) are proximal to the electron transfer layer (164, 244) and distal to the hole transfer layer (144, 264), and where the outer surface is spherical and the first area is a first hemisphere and the second area is a second hemisphere.

The present invention discloses a method for preparing an LED epitaxial wafer, comprising: S1, providing a substrate; S2, growing a nitride buffer layer on the substrate; S3, growing an undoped nitride layer on the nitride buffer layer; S4, growing an n-type nitride layer on the undoped nitride layer; S5, growing an insertion layer unit on the n-type nitride layer, the insertion layer unit comprising a pre-nitride insertion layer, an oxide insertion layer, and a post-nitride insertion layer grown in sequence; S6, growing a quantum well light-emitting layer on the insertion layer unit; S7, growing a p-type layer on the quantum well light-emitting layer. The method for preparing the LED epitaxial wafer of the present invention decelerates electrons through the high potential barrier of the oxide insertion layer, buffers the injection of electrons into the light-emitting layer, reduces the recombination of electrons crossing the light-emitting layer with holes in the p-type layer, improves the droop effect under high current, and at the same time, the electron diffusion is more uniform after passing through the oxide insertion layer, improves the uniformity of the electron distribution in the light-emitting layer, increases the light-emitting efficiency, and improves the epitaxial optoelectronic uniformity and consistency.

The utility model belongs to the technical field of semiconductors, and discloses a beam measuring device and equipment. The beam measurement device comprises a measurement shell, a beam cup and an electrode assembly. A closed mounting cavity is formed in the measuring shell, and a conduction slit communicated with the mounting cavity is formed in the side surface of the measuring shell; the beam cup is arranged in the mounting cavity, and the side face of the beam cup is provided with a collecting sinking groove for beam injection; the electrode assembly is provided with a screening slit, one end of the screening slit is communicated with the conduction slit, the other end of the screening slit is communicated with the collection sinking groove, and electric fields with different potentials are formed in the screening slit to eliminate low-energy ions and electrons in the beam current. When the beam current measuring device is used, the beam current passes through the electric fields with different potentials formed by the electrode assembly, so that electrons in the beam current can be eliminated, low-energy ions in the beam current can also be eliminated, the possibility of interference of the low-energy ions and the electrons on the test result of the beam current can be effectively reduced, and the test accuracy of the beam current measuring device is improved. And the measurement accuracy is effectively improved.

The invention discloses a high-efficiency polycarboxylic acid polyether macromonomer preparation method, and belongs to the field of polycarboxylic acid polyether macromonomers, in the reaction, enol is added, nitrogen is used for replacement, then trimethylaluminum and anhydrous zinc chloride are added, stirring is carried out for dissolution, metallic sodium is added as a catalyst to obtain an initiator, the reaction time is 200-360 min, the addition amount of trimethylaluminum is 0.002-0.003%, the reaction time is 1-2 min, and the reaction time is 1-2 min. The addition amount of anhydrous zinc chloride is 0.005-0.006%, and the principle is that trimethylaluminum and anhydrous zinc chloride belong to Lewi acids, have a vacancy capable of accepting electron pairs to form coordinate bonds, react with Lewi alkali, and can be combined with alcohol to generate Lewi acid characteristics to react with metal sodium. In the prior art, a larger reactor is configured to increase the single-batch yield of an initiator, the input amount of single-batch alkali metal (such as metal sodium and sodium hydride) is increased sharply, and the production risk is greatly improved; and meanwhile, the prolonging of the storage time of the initiator can cause the increase of chromaticity and directly influence the stability of product indexes, and the method is mainly applied to the synthesis of polycarboxylic acid polyether macromonomers.

The application provides an electrolyte and a battery comprising the electrolyte, wherein the diazonium salt compound in the electrolyte can be decomposed in advance to generate a large amount of inert gas before a large amount of organic solvent is volatilized to generate gas during a furnace temperature test, and the inert gas is discharged from the pole lug, so that the generated heat is timely released, heat accumulation in the interior is avoided, and heat runaway is avoided; on the other hand, the volatilization of the organic solvent can cause the ion channel in the battery to be closed, so that the side reaction is stopped, the battery can safely pass the furnace temperature test, and the safety of the battery under the condition of heat runaway is significantly improved. Meanwhile, the electron-deficient B element in the diazonium salt compound in the electrolyte has Lewis acidity, can accept an electron pair, can remove HF in the electrolyte, avoids the damage of HF to the interface protection film, and further improves the high-temperature storage performance of the battery.

This invention discloses a photoelectrocatalyst and its preparation method, wherein the photoelectrocatalyst comprises Zn 2+ Ce 4+ Au; Zn 2+ Including ammonium acetate, zinc nitrate, and hexamethylenetetramine; Ce 4+ Including cerium nitrate, ammonium chloride, and potassium chloride; Au includes PVP, sodium citrate, potassium bromide, and chloroauric acid; Zn 2+ Ce 4+ The molar ratio of Au to Zn is... 2+ Ce 4+ Au = 1:0.5 ~ 1:2.5 * 10 ‑7 ~7.5*10 ‑7 This method uses electrodeposition to prepare ZnO as a substrate. Its vertically aligned one-dimensional (1D) nanostructures exhibit quantum size-dependent effects, effectively shortening the carrier diffusion distance. CeO2 coats the ZnO, forming a stable, acid- and alkali-resistant substrate material. CeO2 traps electrons from Ce... 4+ Restored to Ce 3+ This forms oxygen voids and Ce 3+ / Ce 4+ Electron pairs produce high catalytic activity.

The invention provides an 18-crown-6 modified eutectic solvent, a preparation method thereof and a method for extracting cobalt and nickel from hydrochloric acid leachate of a retired lithium ion battery, and belongs to the technical field of metal recovery. According to the invention, oxygen atoms in 18-crown-6 molecules have strong electron pairs and can form coordinate bonds with metal ions; meanwhile, the structure of the 18-crown-6 has relatively high selectivity and shows relatively strong affinity to cobalt and nickel; when the 18-crown-6 is combined with the metal ions, the solubility and the stability of the metal ions in the eutectic solvent can be remarkably improved, so that the extraction effect is optimized; in addition, the 18-crown-6 can also improve the stability of the eutectic solvent, enhance the hydrophobicity of the solvent, avoid the volatilization and dissolution problems of the solvent, and further improve the extraction selectivity and efficiency; 18-crown-6 is used for modifying and synthesizing a hydrophobic deep-eutectic solvent, and the metal extraction performance of the hydrophobic deep-eutectic solvent can be remarkably improved.

The application belongs to the field of space electric propulsion, and particularly relates to a working medium-free cathode neutralization circuit for a microwave ion thruster; the circuit comprises an ion thruster, a bias power supply and a cathode power supply circuit; the ion thruster is used for coupling discharge to generate an ion plume, the cathode power supply circuit is used for releasing electrons to neutralize the ion plume generated by the ion thruster; the bias power supply is used for adjusting the potential difference between the cathode neutralization ion thruster; the positive electrode of the bias power supply is connected with the ion thruster, and the negative electrode of the bias power supply is connected with the cathode power supply circuit, so that high-precision neutralization of the ion plume of the thruster is realized, the problem of thrust eccentricity caused by insufficient neutralization precision of the ion plume of the thruster is solved, and the cathode life is improved.

Light-emitting element comprising: a light-emitting layer between an anode and a cathode; and a first layer between the light-emitting layer and the cathode, wherein the first layer is an electron injection layer, wherein the first layer includes a first organic compound and a transition metal, wherein the first organic compound contains an unshared electron pair, and where the first organic compound and the transition metal form a SOMO (single occupied molecular orbital).

The present invention provides a novel compound and an organic light-emitting device comprising the same, in which a rigid fluorene-based substituent is introduced into 1,10-phenanthroline having a non-shared electron pair. When the compound is applied to one or more organic layers of an electron transport layer (ETL), a hole blocking layer (HBL), and an N-type charge generation layer (N-CGL), the compound enables the implementation of low voltage, high efficiency, and long life of an organic light-emitting device.

The invention belongs to the technical field of perovskite. The invention provides a functional layer for improving the stability of a perovskite thin film and a preparation method and application thereof. The functional layer comprises a novel covalent organic framework material (COFs material). The structures of the COFs materials can form fine micro / nano-scale pore diameters, and the COFs materials not only have high surface area, but also have stable non-polar vinyl bonds. In the COFs material, an azine unit of a lone electron pair is completely exposed to provide a strong hydrogen bond accepting site in a one-dimensional channel, so that the COFs material has excellent water absorption performance. The functional layer containing the COFs material can significantly reduce the erosion of water vapor to the perovskite film, and the stability of the perovskite device is greatly improved.

The invention discloses an electron accelerator bunching system optimization design method for a new-generation positron-positron collision machine replacement injection scheme, and belongs to the field of electron beam injectors. According to the method, a genetic algorithm is adopted, and the output beam bunching length and energy divergence of a bunching system serve as fitness functions; the optimization target is that the beam bunch length and the energy divergence are converged to the minimum at the same time, and a preliminary design result of beam bunching system layout and element parameters is obtained; then, beam dynamics software is used for further carrying out multi-particle simulation, a preliminary design result obtained by the genetic algorithm is verified, constraint conditions in the multi-target genetic algorithm are continuously corrected, iterative computation is carried out, and through multiple times of iterative computation, a multi-particle model is obtained; the optimal design result of the electron accelerator bunching system layout and elements meeting the clash ring injection requirement is obtained; according to the method provided by the invention, the optimal design result of the electron accelerator bunching system layout and element parameters meeting the clash ring injection requirement can be quickly obtained.

The invention discloses a tokamak rupture escape electron real-time control method and system. The method comprises the steps that S1, real-time data monitoring of plasma operation is carried out; s2, on the basis of the monitoring data in the step S1, identification and prediction of the operation state of the plasma are completed; s3, when plasma rupture is identified or predicted in the step S2, emitting a strong magnetic disturbance field and / or injecting gasified tungsten to the plasma, dissipating rupture escape electrons, if generation of the rupture escape electrons is successfully avoided, completing the task, and if generation of the rupture escape electrons is not successfully avoided, entering S4; s4, the plasma is pushed to impact the first wall of the strong field side of the device, if the escape electrons are successfully eliminated, the task is completed, and if the generation of the broken escape electrons is not successfully eliminated, the step S5 is executed; and S5, injecting deuterium into the plasma core part to freeze and crush the projectile, relieving rupture escape electrons, and completing the task. Therefore, the damage to the tokamak fusion device caused by the broken escape electrons is avoided and relieved.

The invention relates to a method for preparing an electron transport layer in a perovskite battery through magnetron sputtering and the perovskite battery, the magnetron sputtering is carried out by adopting the method provided by the invention, secondary electrons generated by target materials serving as cathodes are interacted by an electric field and a magnetic field, and then are effectively controlled in a space defined by at least two target materials, so that the electron transport layer in the perovskite battery is prepared. Columnar plasmas are formed, the collision ionization probability between electrons and reaction gas is further increased, the ionization degree of the reaction gas is effectively improved, and the deposition rate of the electron transport layer on the surface of the perovskite layer is increased. Besides, the plasma formed by the secondary electrons is bound in the space enclosed by the at least two target materials, so that the bombardment effect of the electrons with relatively high kinetic energy on the substrate can be avoided, the damage to the substrate is further effectively reduced, meanwhile, the temperature rise of the perovskite layer in the magnetron sputtering process is also inhibited, and the cycling stability of the perovskite battery is ensured.

The utility model discloses iron-based horizontal pulse electroplating equipment which comprises an electroplating tank and a copper dissolving tank used for dissolving pure copper particles to form electroplating liquid, and the copper dissolving tank is connected with the electroplating tank through a conveying pipeline; the electroplating bath comprises a bath body and a plurality of groups of anode boxes arranged in the bath body, each group of anode box comprises a lower frame body arranged at the bottom of the bath body, an upper frame body spaced from the lower frame body, a plating solution spraying device arranged on the lower frame body and the upper frame body, and a titanium mesh flatly laid in the lower frame body, and the titanium mesh of each group of anode boxes is respectively connected with a pulse rectifier. According to the iron-based horizontal pulse electroplating equipment provided by the utility model, the maintenance frequency can be obviously reduced, so that the cost of manpower and material resources is saved, the productivity is improved, the purpose of continuous clean production can be achieved by utilizing a Fe < 2 + > / Fe < 3 + > redox electron pair technology and only by regularly supplementing pure copper particles in the copper dissolving tank, the uniformity of electroplating copper thickness can be improved, and the deep electroplating capability of electroplating can be improved.

The invention discloses a process method for improving the pixel performance of a CMOS image sensor, and the method at least comprises the following steps: S1, providing a P-type substrate, and growing a first epitaxial layer on the P-type substrate; s2, growing an N-type epitaxial layer on the first epitaxial layer; the doping concentration of the N-type epitaxial layer is in a rising trend from the first epitaxial layer along the growth direction of the N-type epitaxial layer. According to the process method, cross contamination caused by hole electron pair recombination in the P-type or N-type epitaxial layer can be avoided, the hysteresis effect and image ghosting are reduced, the problem of uneven concentration distribution caused by impurity atom diffusion is effectively solved, and therefore the pixel performance is improved.

The invention discloses a method and device for inhibiting a negative hydrogen ion source from leading out electrons and maintaining uniformity, and relates to the technical field of magnetic confinement fusion, and the method comprises the steps: building a discharge chamber of a radio frequency dual-drive ion source comprising a drive source region, a diffusion region and a grounding shielding cover, and enabling the drive source region to be in sealed connection with the diffusion region, a back plate is made of stainless steel, the side wall is a quartz cylinder wound with a radio frequency copper wire coil, and a partition plate or a grid mesh is arranged near an outlet of the driving source area; discharging gas is introduced into the cavity, power is applied to the coil to generate plasma, and electrons are absorbed through the partition plate or the grid mesh to achieve the suppression effect. The method does not need to depend on a filtering magnetic field, E * B-and anti-magnetic drift interference can be avoided, damage of electrons to H-ions is effectively reduced, grid thermal load is reduced, plasma uniformity can be maintained, the density ratio of the electrons to negative hydrogen ions is optimized, and beam quality and transmission efficiency are remarkably improved.

The application discloses a method for preparing activated carbon by treating rectifying still residues with low-temperature plasma, which comprises the following steps: putting dry rectifying still residues into a low-temperature plasma generating device, and introducing working gas; adjusting the discharge power of the low-temperature plasma generating device to carry out discharge treatment, so that the working gas is converted into low-temperature plasma at room temperature, and the rectifying still residues generate activated carbon in the atmosphere of the low-temperature plasma. The method for preparing activated carbon by treating rectifying still residues with low-temperature plasma forms various active particles with oxidation capacity in the treatment process, destroys the covalent bonds of organic matters in the rectifying still residues at room temperature, and the generated ultraviolet photons make the shared electron pairs in the covalent bonds absorb the photons and enter into an excited state, and the absorbed energy of the molecules in the excited state when returning to the ground state makes the covalent bonds break and recombine, and generates covalent bonds with higher binding energy, so that the H, O, P, N and other heteroatoms in the organic matters are removed, and the activated carbon with rich porosity is obtained.

The present invention discloses a tellurium-based optical crystal material with large birefringence, a preparation method thereof and an application thereof, and belongs to the technical field of optical materials. 4+ In the cation, an organic π-conjugated ring-o-phenanthroline and a Cl element that is beneficial to the blue shift of the ultraviolet cutoff edge are introduced. Under the condition of ethanol as solvent, Te 4+ was reduced to Te 2+ In addition, the two N on o-phenanthroline contain lone pairs of electrons, making it a good bidentate ligand. In the process of synthesizing crystals, it provides lone electron pairs to Te 2+ Forming a chemical coordination bond, the organic coordination bond allows Te 2+ It shows a neat and consistent planar structure, which makes the groups arranged neatly and uniformly, effectively increasing the optical anisotropy of the compound and obtaining an optical crystal with extremely high birefringence (C 12 H8N2)TeCl2, the birefringence can reach 1.086@546 nm.

This application discloses an electron beam accelerating tube and an electron beam accelerator, relating to the field of electron beam accelerator technology. The electron beam accelerating tube includes a first cavity and a suppression cavity. A first electromagnetic field is generated within the first cavity, which is used to accelerate the electron beam emitted from the electron gun through the first electromagnetic field, and the first electromagnetic field forms a leakage field. The suppression cavity is disposed between the first cavity and the electron gun, and the suppression cavity establishes a second electromagnetic field within itself through the leakage field. The intensity of the second electromagnetic field is higher than the intensity of the leakage field, and the second electromagnetic field is used to suppress the movement of electrons in the electron beam toward the electron gun. Using the electron beam accelerating tube disclosed in this application can reduce the back-bombardment phenomenon of electrons on the electron gun, improving the performance and lifespan of the electron gun.