The invention discloses a preparation method and an application of a highly crystallized
carbon nitride photocatalytic material, and belongs to the technical field of
semiconductor photocatalytic materials. The method comprises the following steps: 1) calcining
melamine in a
muffle furnace to obtain a heptazine precursor; 2)
grinding and uniformly mixing the heptazine precursor,
potassium salt andlithium salt, and calcining the mixture in the
muffle furnace; 3) taking out the calcined product, and cleaning and
drying the calcined product to obtain crystallized
carbon nitride; and 4) dispersing the obtained crystallized
carbon nitride in
hydrochloric acid, continuously stirring the
system, and finally washing and
drying the
system to obtain the highly crystallized carbon
nitride photocatalytic material. In the invention, the crystallized carbon
nitride is treated in the
hydrochloric acid aqueous solution, so that the
crystallinity of the obtained carbon
nitride is greatly enhanced. Thehigh-
crystallinity carbon nitride has great advantages in the aspects of photo-generated carrier migration and photo-generated
electron hole pair inhibition. Meanwhile,
potassium ions embedded into the high-
crystallization carbon nitride middle layer make great contribution to migration of photo-induced electrons. Based on the two characteristics, the photocatalytic
hydrogen production activity of the high-crystalline carbon nitride is greatly enhanced.