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A kind of preparation method and application of cadmium sulfide nanosheet

A nanosheet and cadmium sulfide technology, which is applied in cadmium sulfide, chemical instruments and methods, catalyst activation/preparation, etc., can solve the problem of reaction equipment with strong heat resistance and corrosion resistance, which is difficult to promote and apply on a large scale, and the thickness of cadmium sulfide nanosheets. Thickness and other issues, to achieve good crystallinity, improve photocatalytic hydrogen production activity, and promote the effect of migration

Active Publication Date: 2021-03-30
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Application Information

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Problems solved by technology

However, the thickness of the cadmium sulfide nanosheets obtained by this method is relatively thick (60-150nm), and the yield is not ideal.
Pan et al. (Pan, Z.; Li, J.; Zhou, K., Wrinkle-free atomically thin CdS nanosheets for photocatalytic hydrogenevolution. Nanotechnology 2018, 29, 215402.) reported a preparation method of cadmium sulfide nanosheets, which Cadmium chloride is placed in diethylenetriamine solution to synthesize cadmium sulfide nanosheets by solvothermal method. Although the obtained cadmium sulfide nanosheets are thinner (about 0.7nm), this method requires high reaction equipment. The reaction equipment needs to be highly resistant to heat and corrosion, and the cost is high and the operation is complicated, so it is difficult to realize large-scale application

Method used

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  • A kind of preparation method and application of cadmium sulfide nanosheet
  • A kind of preparation method and application of cadmium sulfide nanosheet
  • A kind of preparation method and application of cadmium sulfide nanosheet

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preparation example Construction

[0025] A preparation method for cadmium sulfide nanosheets, characterized in that it comprises the following steps:

[0026] Step 1. Weigh a certain amount of cadmium salt and place it in a small crucible, cover the pot, and place it in a large crucible;

[0027] Step 2, adding thiourea into the large crucible until the thiourea completely covers the small crucible;

[0028] Step 3. Cover the large crucible after adding thiourea in step 2, and place it in a muffle furnace for calcination. The calcination temperature is 300°C, the heating rate is 10°C / min, and the holding time is 4h. After the reaction is completed, , naturally cooled to room temperature, and taken out;

[0029] Step 4. Grind the yellow granular product in the small crucible taken out in step 3 evenly, wash the obtained powder with deionized water for 3 to 5 times, then centrifuge, and dry the obtained precipitate at 60°C for 12 hours to obtain the described Cadmium sulfide nanosheets.

[0030] Further, the ...

Embodiment 1

[0035] A preparation method for cadmium sulfide nanosheets, characterized in that it comprises the following steps:

[0036] Step 1, take by weighing 0.5g cadmium sulfate (CdSO 4 8 / 3H 2 O (≥99.0%)) is placed in a 50mL small crucible, and after covering the pot, place it in a 100mL large crucible;

[0037] Step 2, fill up 50g of thiourea in the large crucible, so that it can completely cover the small crucible;

[0038] Step 3. Cover the large crucible after adding thiourea in step 2, and place it in a muffle furnace, raise the temperature from room temperature to 300°C at a heating rate of 10°C / min, and keep it warm at 300°C for 4h, and react After completion, cool to room temperature naturally and take out;

[0039]Step 4. Grind the yellow granular product in the small crucible taken out in step 3 evenly, add deionized water to the obtained powder, wash and centrifuge, repeat "cleaning-centrifugal separation" 5 times, and dry the obtained precipitate at 60°C for 12 hours ...

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Abstract

A preparation method and application of cadmium sulfide nanosheets belong to the technical field of semiconductor photocatalytic material preparation. Specific process: 1) Place the cadmium salt in a small crucible, cover the pot, and place it in a large crucible; 2) Add thiourea into the large crucible until thiourea completely covers the small crucible; 3) Put the large crucible into Cover the pot and place it in a muffle furnace for calcination. The calcination temperature is 300°C and the holding time is 4h. After the reaction is completed, it is naturally cooled to room temperature and taken out; 4) The product obtained in the previous step is ground, washed and dried. , the cadmium sulfide nanosheets can be obtained. The method is obtained by calcining the solid precursor cadmium salt in the atmosphere of thiourea in the next step, without adding any organic or inorganic solution in the preparation process, the preparation conditions are mild, the operation is simple and convenient, and it is suitable for large-scale industrial production, and the obtained cadmium sulfide nanosheets The photocatalytic hydrogen production activity was significantly improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photocatalytic material preparation, and in particular relates to a preparation method and application of a sheet-like structure cadmium sulfide nanometer material capable of enhancing visible light photocatalytic hydrogen production activity. Background technique [0002] In recent years, with the rapid development of social economy, problems such as energy shortage and environmental pollution have become increasingly serious. As an emerging technology, semiconductor photocatalysis technology can not only photocatalytically decompose water to produce hydrogen as a clean energy source, but also photocatalytically degrade pollutants, which has attracted more and more attention. As a photocatalytic material, metal sulfide semiconductors have been widely used in sewage treatment, photolysis of water for hydrogen production, and environmental purification due to their suitable bandgap width and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G11/02B82Y40/00B01J27/04B01J35/02B01J37/08C01B3/04B01J35/00
CPCB82Y40/00C01B3/042C01G11/02B01J27/04B01J37/082B01J35/00B01J35/30B01J35/39Y02E60/36
Inventor 向全军程蕾张怀武廖宇龙李颉金立川
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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