Equivalent evaluation test method for ionization damages of heterogeneous irradiation sources of bipolar devices

Abstract

The invention discloses an equivalent evaluation test method for ionization damages of heterogeneous irradiation sources of bipolar devices, relates to irradiation tests of materials and devices, belongs to the field of science and technology, and aims at predicting performance degradation features of bipolar transistors under different types of particle irradiation conditions. The invention provides a ground equivalent evaluation test method equivalently simulating irradiation damages of other irradiation sources on the basis of an irradiation source establishing performance degradation model, and the method is applied to bipolar transistors and other types of bipolar technological devices; through selecting a certain type of charged particles with specific energy to carry out irradiationtest under a proper irradiation flux condition, the bipolar device performance degradation model can be established; by combining a Monte Carlo method to calculate and analyze the damage abilities ofother types of irradiation sources, irradiation damages of different types of irradiation sources can be normalized so as to achieve the aim of predicting on-orbit performance degradation. The methodhas the beneficial effects of correctly predicting on-orbit ionization damage performance degradation laws of bipolar transistors and being simple in steps and easy to operate.

Description

technical field [0001] The invention relates to an equivalent evaluation test for ionization damage of heterogeneous radiation sources of materials and devices, and belongs to the field of nuclear science and technology. Background technique [0002] During the in-orbit service of a spacecraft, the influence of the radiation effect of charged particles in the space environment on electronic components must be considered, and the total cumulative energy loss on the incident path of particles is usually dominated by electron energy loss (ionizing radiation effect). The electronic energy loss caused by particles inside the device or material is often characterized by linear energy transfer density (LET, Linear Energy Transfer). LET specifically represents the electronic energy loss per unit length, and the more commonly used unit is MeV cm 2 / mg. When the energy and type of incident particles are certain, the LET values ​​of particles in different materials are approximately e...

AI Technical Summary

Problems solved by technology

The generation of these two defects will increase the surface recombination rate, increase the recombination electrorheology, and reduce the minority carrier lifetime, which will eventually lead to an increase in the base current, a decrease in the current gain, and an increase in the leakage current of the bipolar transistor under ionizing radiation.

[0005] However, in the actual space environment, various high-energy charged particles exist at the same time, how to perform equivalent evaluation on the ionizing radiation damage of bipolar transistors from different types of radiation sources is a difficult problem at present.

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