Analytical method for safety boundary performance degradation of single-particle irradiated silicon carbide power MOSFETs

A technology of irradiating silicon carbide and safety margins, which is applied in the electronic field, can solve problems such as the inability to design MOSFETs devices and the inability to accurately obtain the safety margins of SiC power MOSFETs devices, and achieve the effect of increasing utilization efficiency

Inactive Publication Date: 2018-07-27
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that it is impossible to design MOSFETs devices within the safe use range due to the inability to accurately obtain the safety boundary of single-particle irradiation of SiC power MOSFETs devices

Method used

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  • Analytical method for safety boundary performance degradation of single-particle irradiated silicon carbide power MOSFETs
  • Analytical method for safety boundary performance degradation of single-particle irradiated silicon carbide power MOSFETs
  • Analytical method for safety boundary performance degradation of single-particle irradiated silicon carbide power MOSFETs

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Experimental program
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specific Embodiment approach 1

[0038] Such as figure 2 As shown, an analysis method for the performance degradation of the safety boundary of SiC power MOSFETs irradiated by single events includes the following steps:

[0039] Step 1. Use heavy ions or protons to irradiate silicon carbide SiC power MOSFETs devices with single particles to obtain test data of single particle burnout or gate breakdown. The specific process is as follows:

[0040] (1) Experimental design scheme for single-particle irradiation silicon carbide SiC power MOSFETs devices, preparation of samples and single-particle detection system;

[0041] (2) Install the sample to be tested;

[0042] (3) Apply a reverse bias voltage to the sample: drain-source reverse bias voltage V DSi , Gate-source reverse bias voltage V GSi ;

[0043] (4) Set the upper limit of the SiC power device current (subject to the electrical characteristic specification of the specific product), connect a high-precision multimeter in series with the drain-source ...

specific Embodiment approach 2

[0056] An analysis method for performance degradation of silicon carbide power MOSFETs safety boundary by single-event irradiation, comprising the following steps:

[0057] Step 1. Use heavy ions or protons to irradiate silicon carbide SiC power MOSFETs devices with single particles to obtain test data of single particle burnout or gate breakdown. The specific process is as follows:

[0058] (1) Experimental design scheme for single-particle irradiation silicon carbide SiC power MOSFETs devices, preparation of samples and single-particle detection system;

[0059] (2) Install the sample to be tested;

[0060] (3) Apply a reverse bias voltage to the sample: drain-source reverse bias voltage V DSi , Gate-source reverse bias voltage V GSi ;

[0061] (4) Set the upper limit of the SiC power device current (subject to the electrical characteristic specification of the specific product), connect a high-precision multimeter in series with the drain-source circuit of the device und...

specific Embodiment approach 3

[0073] An analysis method for performance degradation of silicon carbide power MOSFETs safety boundary by single-event irradiation, comprising the following steps:

[0074] Step 1. Use heavy ions or protons to irradiate silicon carbide SiC power MOSFETs devices with single particles to obtain test data of single particle burnout or gate breakdown. The specific process is as follows:

[0075] (1) Experimental design scheme for single-particle irradiation silicon carbide SiC power MOSFETs devices, preparation of samples and single-particle detection system;

[0076] (2) Install the sample to be tested;

[0077] (3) Apply a reverse bias voltage to the sample: drain-source reverse bias voltage V DSi , Gate-source reverse bias voltage V GSi ;

[0078] (4) Set the upper limit of the SiC power device current (subject to the electrical characteristic specification of the specific product), and connect it in series with the drain-source circuit of the device under test through a high-...

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Abstract

The present invention provides an analysis method for safety boundary performance degradation of single-particle irradiated silicon carbide power MOSFETs, and relates to a method for determining the safety boundary performance of a silicon carbide power device, in order to solve the problem that the safety boundary of single-particle irradiation of the SiC type power device cannot be accurately obtained at present. The technical scheme provided by the present invention is characterized in that: a ground single-particle irradiation silicon carbide power device is used to obtain test data of a single-particle burnout or gate-through effect of the device; and each pair of test data values are drawn in a reverse bias voltage and electrical parameter performance numerical coordinate system, thepoints corresponding to the minimum reverse bias voltage and the electrical parameter value when the single-particle burnout or the gate-through effect occurs are marked, and the points correspondingto the maximum reverse bias voltage and the electrical parameter value when the single-particle burnout or the gate-through effect does not occurs are marked, so as to determine the charge collectionregion, the electrical parameter value increase region, and the device breakdown burned region. The technical scheme provided by the present invention is used for determining the safety boundary performance of a silicon carbide power device.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a method for determining the safety boundary performance of a silicon carbide power device. Background technique [0002] With the continuous development of aerospace technology, especially advanced space kilovolt high-voltage power supply systems, high-temperature propulsion power processing units, and deep space probes under extreme environmental and working conditions, the demand for high-power and high-temperature resistant devices has become increasingly obvious. Silicon carbide power devices should have the advantages of high speed, high breakdown voltage, low leakage current, and high temperature resistance, so they have good application prospects in aerospace kilovolt high voltage, high frequency, and high temperature systems. In spaceflight applications, radiation particles existing in space will cause radiation damage to SiC power MOSFETs devices operating in spacec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/20G06F30/398
Inventor 李鹏伟李兴冀杨剑群董磊
Owner HARBIN INST OF TECH
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