The invention discloses an
ion implantation method, medium and
system for a
semiconductor wafer, and the method comprises the following steps: S1, receiving
dose ratio parameters of a plurality of concentric circle regions inputted by a user, and calculating the
target dose of each region according to the
total dose; s2, according to the calibration positions of the
wafer target disc center and the beam current center, the beam current height and the
radius parameter of each area, calculating the variable speed position coding value of each area in the vertical scanning direction; s3, based on the
target dose, the injection speed of each region is calculated; s4, in a single vertical scanning process, dynamically adjusting the scanning speed of the
wafer according to the variable-speed position coding value, and realizing variable-speed injection corresponding to different injection speeds in different areas; and S5, rotating the wafer to the next orientation, and repeating the step S4 until injection of all set orientations is completed, thereby realizing
dose distribution of concentric circles or specific patterns. The method has the advantages that customizable
dose distribution of specific graphs such as concentric circles can be realized, and the like.