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Method of controlling uniform distribution of ion implantation

A technology of ion implantation and uniformity, applied in the direction of discharge tubes, electrical components, circuits, etc., can solve problems such as inability to meet uniformity and parallelism, and inability to obtain broadband beams, and achieve simple structure, reliable functions, and easy control.

Active Publication Date: 2014-05-14
BEIJING SHUOKE ZHONGKEXIN ELECTRONICS EQUIP CO LTD
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Problems solved by technology

However, in reality, such a high-uniform broadband beam cannot be obtained from the ion source, and the beam passing through the analysis is affected by many factors such as space charge effect, adjustment unit, and space interference, and finally reaches the target after correcting the magnetic field and decelerating. The broadband beam must not meet the uniformity and parallelism required by the process, so it is necessary to design a suitable uniformity and parallelism correction mechanism, so that in actual work, according to the final beam uniformity and parallelism parameters measured at the target position, Closed-loop optimization adjusts the corresponding parameters of the broadband beam, and finally obtains the uniformity and parallelism indicators that meet the process requirements

Method used

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Embodiment Construction

[0019] Attached below figure 1 and attached figure 2 The present invention is further introduced, but not limited to the present invention.

[0020] like figure 1 As shown in the figure, a system for precisely controlling the uniform distribution of ion implantation involves high-precision multi-channel I / V acquisition and conversion, detection and correction of beam distribution density in the horizontal direction, beam parallelism detection, and vertical scanning control algorithm; the system is mainly composed of multi-coil It consists of adjusting magnet, multi-stage adjusting magnetic pole, moving Faraday cup, sampling Faraday cup, linear motor and PMAC motion control system.

[0021] The drawn broadband beam is adjusted by the coordination of the multi-coil adjusting magnet installed at the entrance of the wide beam parallel lens and the multi-stage adjusting magnetic poles installed at the exit of the wide beam parallel lens to ensure the uniformity and parallelism o...

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Abstract

The invention discloses a method of accurately controlling uniform distribution of ion implantation, relates to an ion implantation machine and belongs to the semiconductor manufacturing field. The method comprises high-precision multi-channel I / V acquisition and conversion, horizontal direction beam distribution density detection and correction, beam parallelism detection and a vertical scanning control algorithm. The system is mainly formed by a multi-coil adjusting magnet, a multistage adjusting magnetic pole, a moving Faraday cup, a sampling Faraday cup, a linear motor and a PMAC motion control system. By using the method of the invention, accurate detection of ion dosage of ion implantation can be automatically realized; uniformity control of ion implantation distribution and accuracy control of the dosage are automatically realized too.

Description

technical field [0001] The invention relates to a method for controlling the uniformity of an ion implanter, relates to an ion implanter, and belongs to the field of semiconductor equipment manufacturing. Background technique [0002] Ion implanter uniformity control technology is one of the key technologies of ion implanter. Its working principle is based on various control and measurement methods and devices to uniformly and precisely implant ions into the entire wafer surface according to the set dose. However, in reality, it is impossible to obtain such a high uniformity broadband beam from the ion source, and the beam passing through the analysis is affected by many factors such as space charge effect, adjustment unit, space interference, etc., and finally reaches the target after correcting the magnetic field and deceleration. Broadband beams must not meet the uniformity and parallelism required by the process. Therefore, a suitable uniformity and parallelism correctio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317H01J37/147
Inventor 吴巧艳
Owner BEIJING SHUOKE ZHONGKEXIN ELECTRONICS EQUIP CO LTD
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