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Ion injection simulation method

A technology of ion implantation and simulation method, which is applied in the field of simulation of ion implantation process in semiconductor manufacturing process, can solve problems such as failure to accurately simulate the ion implantation process, and achieve the effects of reducing simulation running time, increasing reliability, and reducing the number of

Inactive Publication Date: 2007-11-28
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology

Apparently, this method emphasizes the influence of the dose values ​​corresponding to different profile components on the distribution of implanted ions, while ignoring the influence of various instantaneous parameters of the ion implantation process on the distribution of implanted ions, that is, the method fails to accurately simulate ion implantation process

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  • Ion injection simulation method
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Embodiment Construction

[0035] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0036] The ion implantation simulation method provided by the present invention includes: firstly, obtaining the measured implanted ion distribution curves of different ion implantation profiles; then, using the TCAD tool, setting a simulation function, fitting the implanted ion distribution curve, and obtaining the implanted ion distribution simulation and obtain the basic data of the simulation; extract the basic data of the simulation parameters from the basic data of the simulation, use the interpolation method to obtain the data series of the simulation parameters, and form the ion implantation parameter matrix; finally, use the ion implantation parameter matrix to simulate different ion implantation processes, Obtain a series of c...

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Abstract

The invention discloses an ion implantation analogy method, which comprises the following steps: firstly, getting the measured ion implantation distribution curve of the different ion implantation section; secondly, setting the analogue function with TCAD tool, fitting the distribution curve of the ion implantation, getting the distribution analogue basic curve of the ion implantation and acquiring the analog basic data; extracting the analog parameter from the analog basic data, acquiring the analog parameter data series by the analog calculation, forming the parameter matrix of the ion implantation; imitating the different ion implantation processes with the parameter matrix of the ion implantation and acquiring the distribution serial curve of the ion implantation; at last, getting the influence regularity of the ion implantation distribution in the material produced by the parameter variation of the ion implantation by the ion implantation distribution serial curve. The invention can provides the process control window of the ion implantation, which optimizes the process designing of the ion implantation, reduces the analog operating time, and reduces the research cost.

Description

technical field [0001] The invention relates to the technical field of process simulation, in particular to a simulation method for an ion implantation process in a semiconductor manufacturing process. Background technique [0002] Ion implantation technology is widely used in the manufacturing process of modern semiconductor devices because it can change the electrical properties of devices by introducing a controllable amount of impurities into the device substrate. In the field of semiconductor device manufacturing, ion implantation technology is mainly used to dope semiconductor materials with impurities. Usually, different devices have specific requirements on the concentration and depth of doped impurities; the dose and range of ion implantation are two important parameters of the ion implantation process, and the precise control of the dose and range of ion implantation is the key to optimize the ion implantation process. Target. The range of ion implantation is det...

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Application Information

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IPC IPC(8): H01L21/265H01L21/425H01L21/66C30B31/22H01J37/317
Inventor 李家豪李素萍刘巍赵猛
Owner SEMICON MFG INT (SHANGHAI) CORP
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