30 results about "Plasma parameter" patented technology

The invention involves a method of characterizing a plasma reactor chamber through the behavior of plasma parameters selected from a group comprising ion density, wafer voltage, etch rate, wafer current, as functions of chamber parameters of source power, bias power and chamber pressure. The method begins by performing two steps for each one of the selected chamber parameters. The first step consists of ramping the level of the one chamber parameter while sampling RF electrical parameters at an RF bias power input to said wafer support pedestal and computing from each sample of said RF electrical parameters the values of the plasma parameters. These values are stored with the corresponding levels of the one chamber parameter as corresponding chamber parameter data. The second step consists of deducing, from the corresponding chamber parameter data, a single variable function for each of the plural plasma parameters having said one chamber parameter as an independent variable. The method continues with constructing combinations of these functions that are three variable functions having each of the chamber parameters as a variable. Then, from each three-variable function, the method constructs a set of surfaces, each individual surface corresponding to a respective constant value of the corresponding plasma parameter and defining simultaneous values of all of the selected chamber parameters. These surfaces are stored in memory for later use in controlling the chamber during wafer processing.

The invention discloses a flat-packed probe device for diagnosing plasma parameters in a high-speed flow field. The device includes a flat-packed probe, wherein the flat-packed probe makes the probe electrode surface flush with the surface of an insulating sleeve. This structure well solves the problem that in the high-speed flow field plasma, the traditional electrostatic probe is easily damaged in the flow field due to the exposed electrode, and the problem that the traditional electrostatic probe sticks out of the surface of the flying object affects flight safety. It can be seen that in the high-speed flow field plasma environment, the flat-pack probe can replace the electrostatic probe to better diagnose the plasma parameter information. The invention adopts the structure that the surface of the electrode is flush with the surface of the flying object, and successfully solves the difficulty that the electrode of the traditional Langmuir probe is exposed, easily insulated and damaged.

The invention discloses a vacuum discharge plasma parameter measuring device and method, falling in the technical field of plasma diagnosis. The invention is characterized by adopting a grid, to which a negative potential is applied, to control plasma. The device structurally comprises the grid, a first probe and a second probe sequentially mounted on a plasma transmission channel. The grid is connected with a control signal generator, the first probe is connected with the common node of a direct current power supply DC1and a capacitor C1, and the second probe is connected with the common node of a direct current power supply DC2 and a capacitor C2. The invention can perform diagnosis on characteristics of plasma generated by discharge of a single pulse or continuous pulses and distributed in different spaces or at different time points; can realize on / off control on the plasma by applying a proper barrier potential; facilitates analysis of transmission characteristics of the plasma in a space; and has the characteristics of simple structure, high measurement precision and strong interference resistance.

The invention discloses a multi-channel switching Langmuir probe measurement system which comprises a plasma, a Langmuir probe, a multi-channel switching system, a single-probe scanning measurement circuit, a data acquisition and processing system and a master control system interaction interface. A plurality of Langmuir probes placed in the plasma are connected with a single-probe scanning measurement circuit through a multi-channel switching system, and data processing is carried out by using a current-voltage curve acquired and measured by the data acquisition and processing system so as toobtain corresponding plasma parameter data measured by each probe. According to the invention, the single-probe scanning measurement circuit is used; by switching the Langmuir probes of multiple channels, measurement of plasma parameters at different probe positions is realized, the cost of plasma parameter measurement is reduced, and human-computer interaction operation is simple and convenient;and the system is suitable for monitoring and measuring steady-state plasma discharge parameters at a certain time scale.

The invention discloses a space plasma parameter diagnosis device based on a four-degree-of-freedom motion mechanism, and the device comprises a probe array, the four-degree-of-freedom motion mechanism and a fixing frame, the four-degree-of-freedom motion mechanism is of a four-axis structure and comprises two X axes, a Y axis and a Z axis, and each axis is provided with a linear motion module; the probe array is installed on the Z axis of the four-degree-of-freedom motion mechanism and can rotate around the X axis by 90 degrees; the fixing frame is composed of a welding fixing plate, a supporting column, a vertical adjusting mechanism, a horizontal adjusting mechanism and a datum plate; the four-degree-of-freedom motion mechanism is fixed to the reference plate through an X-axis bottom plate, the Y axis is fixed to an X-axis sliding block, and the Z axis is fixed to a Y-axis sliding block. Through combination of the probe array and the four-degree-of-freedom motion mechanism, large-scale, arrayed and multi-dimensional diagnosis of plasma parameters is realized, and technical support is provided for near-earth space plasma physical research.

The invention involves a method of characterizing a plasma reactor chamber through the behavior of many selected plasma parameters as functions of many selected chamber parameters. The plasma parameters may be selected from a group including ion density, wafer voltage, etch rate and wafer current or other plasma parameters. The chamber parameters are selected from a group including source power, bias power, chamber pressure, magnetic coil current in different magnetic coils, gas flow rates in different gas injection zones and species composition of the gas in different gas injection zones.

The invention concerns a method of processing a wafer in a plasma reactor chamber by controlling plural chamber parameters in accordance with desired values of plural plasma parameters. The method includes concurrently translating a set of M desired values for M plasma parameters to a set of N values for respective N chamber parameters. The M plasma parameters are selected from a group including wafer voltage, ion density, etch rate, wafer current, etch selectivity, ion energy and ion mass. The N chamber parameters are selected from a group including source power, bias power, chamber pressure, inner magnet coil current, outer magnet coil current, inner zone gas flow rate, outer zone gas flow rate, inner zone gas composition, outer zone gas composition. The method further includes setting the N chamber parameters to the set of N values.

Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.

A plasma reactor chamber is characterized by performing two steps for each one of plural selected chamber parameters. The first step consists of ramping the level of the one chamber parameter while sampling RF electrical parameters at an RF bias power input to said wafer support pedestal and computing from each sample of said RF electrical parameters the values of the plasma parameters. The second step consists of deducing, from the corresponding chamber parameter data generated in the first step, a single variable function for each of the plural plasma parameters having said one chamber parameter as an independent variable, and constructing combinations of these functions that are three variable functions having each of the chamber parameters as a variable.

For each one of plural plasma parameters, such as ion density, wafer voltage, etch rate, wafer current, a relevant surface of constant value is fetched from a memory. The relevant surface of constant value corresponds to a user-selected value of one of the plasma parameters, the surface being defined in a space of which each one of plural, chamber parameters (e.g., source power, bias power and chamber pressure) is a dimension. An intersection of these relevant surfaces is found, the intersection corresponding to a target value of source power, bias power and chamber pressure. The source power, the bias power and the chamber pressure, respectively, are set to their corresponding target values.

The invention relates to the technical field of low-temperature plasma diagnosis and provides a method for automatically analyzing a low-temperature plasma laser Thomson scattering diagnostic spectrum in real time. The method comprises a step 1 of collecting and acquiring spectral data including a Thomson scattering spectrum, a rotational Raman scattering spectrum, a plasma radiation background spectrum and an intensity calibration coefficient; a step 2 of preprocessing the acquired spectral data; a step 3, based on the least square method, theoretically fitting the laser Thomson scattering spectrum by using a Gaussian function; a step 4 of absolutely calibrating the intensity of the laser Thomson scattering spectrum; a step 5 of, based on the least squares method, theoretically fitting the rotational Raman scattering spectrum by using a rotational Raman scattering formula; and a step 6 of calculating a plasma parameter. The method can quickly acquire the electron temperature and the electron density of the low-temperature plasma, and improves the accuracy and efficiency of the laser Thomson scattering spectrum data analysis.

The present disclosure provides a multi-channel Langmuir probe diagnostic system for calibrating regional plasma distribution, including: a plurality of Langmuir probes, a multi-channel current acquisition circuit and a processor, each Langmuir probe The detection end is set at different positions in the area to be tested, the Langmuir probe is connected to the current acquisition circuit, and the processor is connected to the current acquisition circuit; the processor obtains the plasma parameters according to the received current signal of each Langmuir probe, According to the obtained plasma parameters and the position information of each Langmuir probe, the regional plasma distribution can be obtained; the design of multiple parallel channels can obtain real real-time plasma distribution, making up for the existing technology to achieve multi-channel acquisition through channel switching At the same time, through the parallel processing of multi-channel data, more accurate plasma distribution results are obtained.

The invention discloses a space plasma parameter diagnosis device based on a four-degree-of-freedom motion mechanism. The device includes a probe array, a four-degree-of-freedom motion mechanism and a fixed frame, wherein: the four-degree-of-freedom motion mechanism is a four-axis structure , including two X-axes, one Y-axis and one Z-axis, each with a linear motion module; the probe array is mounted on the Z-axis of the four-degree-of-freedom motion mechanism and can rotate around the X-axis 90 degrees; the fixed frame is composed of a welding fixed plate, a support column, a vertical adjustment mechanism, a horizontal adjustment mechanism and a reference plate; the four-degree-of-freedom movement mechanism is fixed on the reference plate through the X-axis bottom plate, and the Y-axis is fixed on the On the slider of the X axis, the Z axis is fixed on the slider of the Y axis. Through the combination of the probe array and the four-degree-of-freedom motion mechanism, the present invention realizes large-scale, arrayed, and multi-dimensional diagnosis of plasma parameters, and provides technical support for plasma physics research in near-Earth space.

The present invention proposes a ground simulation device for plasma environment in adjacent space and its simulation method. The simulation device includes a vacuum system, a drawable vacuum microwave anechoic chamber system, a plasma beam generation system, an air intake system, a water cooling system, and an excitation power supply. system, vacuum pump group system, target blunt body system, microwave anechoic chamber support system, target blunt body support system, plasma parameter diagnosis system, microwave transmission measurement system, miniaturized antenna group system and central control system; Realize the electromagnetic communication measurement of the plasma environment, check the plasma parameter diagnosis through different diagnostic methods, and generate a plasma beam with high purity, adjustable plasma density and beam size in a long period of time; more Realistically simulate the near-space plasma environment, and provide microwave transmission measurement and plasma diagnosis methods required for relevant research in this environment.

The invention provides a system and method for diagnosing plasma parameters, and relates to the technical field of plasmas. The system for diagnosing the plasma parameters comprises a vacuum electrode, a data processing device, a data collecting device, a gas environment maintaining device, a Langmuir probe and a glow discharge tube, a vacuum electrode is arranged in the glow discharge tube; the gas environment maintaining device is connected with the glow discharge tube and is suitable for providing a gas environment required by glow discharge; the Langmuir probe is connected to the data processing device through the data collection device; the data collection device is suitable for collecting voltage and air pressure data; the data processing device is suitable for diagnosing plasma parameters through the voltage and the air pressure. According to the technical scheme, plasma parameters are diagnosed through the voltage provided by the Langmuir probe and the air pressure provided by the gas environment maintaining device, an artificial neural network can be combined, a computer data processing method of machine learning and a diagnosis method of the Langmuir probe are combined, and the diagnosis accuracy is improved.

The invention discloses a method and system for measuring plasma parameters of femtosecond laser-induced gas ionization. The picosecond laser is used as detection light to detect the dynamic evolution process of the plasma obtained by femtosecond laser-induced gas ionization, and based on the Diffraction model was established by Langhofer diffraction and Fresnel diffraction theory; the detected diffraction spectrum was fitted with the diffraction spectrum based on the diffraction model to obtain the frequency domain evolution of the phase shift of the detection light, and then the time domain evolution of the plasma parameters The present invention can acquire the spatiotemporal evolution process of the plasma in a single shot measurement, and does not need to adjust the delay line in the device to repeat the measurement, which greatly simplifies the operation process, saves the measurement time, reduces the measurement error, and improves the detection accuracy; and, the present invention only needs a single fitting of the diffraction spectrum to calculate and obtain the time domain evolution of plasma parameters, without the need for multiple extraction and fitting, which greatly improves the speed of parameter acquisition.

The invention discloses a plasma parameter diagnosis method based on a BP neural network. The plasma parameter diagnosis method comprises the following steps: step 1, collecting data; step 2, preprocessing the data; step 3, importing and dividing the data; step 4, constructing a network model; step 5, training the model; and step 6, testing and evaluating the model Through an Adam gradient descent optimization algorithm, an adaptive learning rate adjustment strategy, cross validation and other methods, all frequency point information is fully utilized, a BP neural network is combined with the plasma electron density, and the electron density is estimated and diagnosed through the reflection coefficient amplitude and phase.