Electrostatic chuck component and plasma device provided with same

Abstract

The invention discloses an electrostatic chuck component. The electrostatic chuck component comprises an electrostatic chuck, a fixing frame and a temperature sensor. The fixing frame is mounted on the electrostatic chuck. The temperature sensor is arranged on the fixing frame and opposite to the upper surface of the electrostatic chuck, and the lower end face of the temperature sensor is at a preset distance with the upper surface of the electrostatic chuck. According to the electrostatic chuck component and by means of a non-contact temperature measuring method, the lower end face of the temperature sensor is spaced from the upper surface of the electrostatic chuck, particle pollution produced during temperature measuring is decreased, secondary pollution to the electrostatic chuck is avoided, and service life of the electrostatic chuck is prolonged; meanwhile, compared with a temperature measuring mode by a conventional handheld temperature gauge, the non-contact temperature measuring method has the advantages that the temperature sensor is fixed through the fixing frame, measuring error produced by handheld operation of an operator is avoided, and temperature measuring accuracy of the temperature sensor is improved. The invention further discloses a plasma device provided with the above electrostatic chuck component.

Description

technical field [0001] The invention relates to the field of semiconductor equipment manufacturing, in particular to an electrostatic chuck assembly and a plasma device with it. Background technique [0002] Plasma devices are widely used in the manufacturing process of integrated circuits or MEMS devices. One notable application is the Inductive Coupled Plasma (ICP) device. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. These active particles interact with the substrate to cause various physical and chemical reactions on the material surface, thereby changing the properties of the material surface. Plasma devices can complete a variety of processes in semiconductor manufacturing, such as anisotropic, isotropic etching, and chemical vapor deposition (Chemical Vapor Deposition, CVD). In the fabrication of semiconductor based devices, multiple layers of material may be alternately deposited onto and etc...

AI Technical Summary

Problems solved by technology

[0006] However, the above-mentioned temperature measurement method using the surface temperature gauge 2' has the following four disadvantages: 1) The surface thermometer 2' must be in contact with the electrostatic chuck 3' to realize the temperature measurement function, and the probe of the surface thermometer 2' is relatively hard , the disk surface of the electrostatic chuck 3' must be damaged during the measurement project, which seriously affects the life of the electrostatic chuck 3'; The surface of the chuck 3' caused the particles to seriously exceed the standard during the process; 3) The surface thermometer 2' is generally operated by hand, and the force of pressing the surface thermometer 2' by different operators is different, resulting in different readings of the thermometer. The vibration of the operator will also cause the difference in the reading of the thermometer 2', so that the measurement data has a certain deviation; 4) The position of each measurement point cannot be precisely controlled, resulting in poor repeatability of the temperature during measurement

[0008] However, the above measurement device has the following two disadvantages: 1) Due to the wireless measurement method, TC Wafer2" must be powered by batteries, and in the plasma state, TC Wafer2" is subjected to ion bombardment and chemical corrosion, resulting in TC Wafer2" The life of the sensor and battery is very short, generally 2-3 RF (Radio Frequency) hours, and TC Wafer2” must be used in conjunction with its own software system, resulting in high cost of use of TC Wafer2”; 2) TC Wafer2” The stability of the equipment system is required to be very high, and there must be no problems during the entire measurement process, otherwise the TC Wafer2” may be damaged, further increasing the cost of use

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