Structure for Preventing Peeling of Reaction Product, Process for Its Production and Process for the Production of a Semiconductor Device Using the Structure

Abstract

The peeling of a reaction product deposition film 50 is prevented, reducing the particle contamination of a material to be treated 16 by roughening the surfaces (adhesion preventing surfaces) of an outer liner 40 and inner liner 42 both made of aluminum installed as an adhesion preventing plate inside a chamber of a plasma etching device to a surface roughness within a constant range without carrying out alumite treatment.

Description

FIELD OF THE INVENTION[0001]This invention pertains to the prevention of particle contamination on a material to be treated inside the chamber of a treatment device. In particular, it pertains to a reaction product peeling structure that can be used to prevent the formation of particles attributable to the reaction product inside a plasma etching device, a process for its production and a process for the production of a semiconductor device using the structure.BACKGROUND OF THE INVENTION[0002]The etching technique used in the production of semiconductor devices, liquid crystal displays, etc., involves masking a resist pattern formed on the surface of a material to be treated by lithography and processing a thin film of the resist to the desired circuit pattern. It is an essential process. In the main stream plasma etching process being carried out currently, a reactive treatment gas is ionized and dissociated with high-frequency discharge inside a chamber (treatment container) under...

AI Technical Summary

Benefits of technology

[0007]To accomplish the above objective, the structure for preventing peeling of reaction product of this invention for a plasma treatment device is characterized in that a material to be treated is placed in a chamber, a required treatment gas is introduced into said chamber under vacuum, and the plasma etching of said material to be treated is carried out with a plasma formed with discharging of said treatment gas; and that the surface of a member, where the reaction product is to adhere in the case of said plasma etching treatment carried out in said chamber, is roughened so that the accumulated film of said reaction product is prevented from peeling off from the surface of said member.

[0008]In the configuration as described above, the surfaces of members or parts, where the reaction product adheres and accumulates inside the chamber, are suitably roughened, increasing the close contact adhesion of the reaction product with their surfaces, preventing film peeling and consequently reducing particle contamination on materials to be treated due to film peeling.

Problems solved by technology

Deposition films of the reaction product on the adhesion preventing plates tend to grow each time the plasma etching process is carried out, the thickness increases, and if they are left alone as they are, the film tends to peel off from the adhesion preventing plates.

The peeled layer forms particles, which may fall on the substrate being treated, causing the product yield to drop.

However, with the use of the adhesion preventing plates of the prior art as described above in a plasma etching device, the accumulated film of the reaction product may peel off relatively easily, and consequently from the viewpoint of preventing particle generation as described above, the exchange cycle of the adhesion preventing plates must be short, causing problems such as reduction in the availability of the plasma etching device, increased costs of adhesion preventing plate recycling, etc.

Images