48 results about "Metal work function" patented technology

A non-volatile semiconductor memory device comprises a substrate including a source region, a drain region and a channel region provided between the source region and the drain region with a gate stack located above the channel region with a metal gate located above the gate stack. The metal gate is comprised of a metal having a specific metal work function relative to a composition of a layer of the gate stack that causes electrons to travel through the entire thickness of the blocking layer via direct tunneling. The gate stack preferably comprises a multiple layer stack selected from a group of multiple layer stacks consisting of: ONO, ONH, OHH, OHO, HHH, or HNH, where O is an oxide material, N is SiN, and H is a high κ material.

The invention provides a manufacturing method of a semiconductor device. The method comprises the steps of forming a gate dielectric over a semiconductor substrate, forming a capping layer over or under the gate dielectric, forming a metal layer having a first work function over the capping layer, treating a portion of the metal layer such that a work function of the portion of the metal layer changes from the first work function to a second work function, and forming a first metal gate from the untreated portion of the metal layer having the first work function and forming a second metal gatefrom the treated portion of the metal layer having the second work function. The method of the invention provides a simple single metal layer with economic benefit to ensure that NMOS and PMOS devicerespectively have N type metal work function and P type metal work function, so gate patterning NMOS and PMOS devices are simple. The method can is compatible with prior CMOS technique manufacturingflow, so the semiconductor device can be easily integrated with the prior manufacturing processing equipment.

A process is disclosed of forming metal replacement gates for PMOS transistors with oxygen in the metal gates such that the PMOS gates have effective work functions above 4.85. Metal work function layers in the PMOS gates are oxidized at low temperature to increase their effective work functions to the desired PMOS range. Hydrogen may also be incorporated at an interface between the metal gates and underlying gate dielectrics. Materials for the metal work function layers and processes for the low temperature oxidation are disclosed.

The invention provides a non-junction field-effect transistor. The non-junction field-effect transistor includes a source region and a drain region, wherein the source region and the drain region are arranged at two sides of a channel region in a central symmetry manner; the channel region, the source region and the drain region are the same in the doping type and the doping concentration; the channel region is provided with a gate dielectric layer and a gate electrode which is arranged on the gate dielectric layer; the source region and the drain region are respectively provided with a source electrode dielectric layer, a source electrode, a source end side electrode, a drain electrode dielectric layer, a drain electrode and a drain end side electrode; isolating dielectric layers isolate the source electrode from the gate electrode; and the work functions of the source electrode and the drain electrode are the work functions which are determined according to the doping type so as to form a conductive carrier layer on the surface of the source region and the surface of the drain region. The non-junction field-effect transistor can accumulate the corresponding type of carriers on the source region and the drain region to perform current transportation by adjusting the metal work functions of the source electrode and the drain electrode. The structure of the non-junction field-effect transistor can restrain the influence of rough edge of a technological fluctuation line on the device performance, can maintain the current driving capability of a non-junction device, and can optimize the subthreshold feature of the non-junction device so as to improve the stability of device.

The invention discloses a high-dielectric-constant metal gate MOS (Metal Oxide Semiconductor) transistor. A high-dielectric-constant metal gate comprises a gate dielectric layer, a metal work function layer, a top cap layer and a metal conductive material layer, the gate dielectric layer comprises a high dielectric constant layer; the metal work function layer is located at the top of the gate dielectric layer; the top cap layer is located between the metal work function layer and the metal conductive material layer, the top cap layer adopts a material capable of preventing metal of the metal conductive material layer from diffusing to the bottom into the metal work function layer and adopts an amorphous structure, so that oxygen diffusion paths are reduced or eliminated, and oxidation of the surface of the metal work function layer is reduced or eliminated. According to the invention, the top surface of the metal work function layer can be prevented from being oxidized, so that the work function is prevented from deviating, and the threshold voltage of the device is prevented from drifting.