Tunneling field effect transistor capable of effectively increasing on-state current

Abstract

The invention discloses a tunneling field effect transistor capable of effectively increasing the on-state current, which belongs to the field of semiconductor devices and is used for increasing the on-state current of the tunneling field effect transistor. According to the invention, upper and lower gate dielectric layers of the tunneling field effect transistor extend to a source region and partially cover the source region, the surface of the gate dielectric layer at one side of the source region is covered with a metal gate, the surface of the gate dielectric layer at the other side of thesource region is covered with a bias electrode, the bias electrode is isolated from a metal gate at the side by an isolation wall so as to form a vertically asymmetrical structure, the electric fieldperpendicular to the channel direction on the upper and lower sides of the source region covered by the gate electrode is enhanced through externally applying bias voltage to the bias electrode or utilizing the difference of a metal work function between the bias electrode and the metal gate, the intensity of carrier line tunneling is improved, and the total carrier tunneling area and tunneling probability are increased, so that the on-state current of the device is effectively increased.

Description

technical field [0001] The invention belongs to the field of semiconductor devices and relates to a tunneling field effect transistor, in particular to a tunneling field effect transistor capable of effectively increasing the on-state current. Background technique [0002] Tunneling Field Effect Transistor (TFET) is based on the working principle of band-band tunneling, and its subthreshold swing can break through the theoretical limit of 2.3kT / q of MOSFET subthreshold swing, which is 60mV / dec at room temperature. Taking N-type TFET as an example, the source region is heavily doped with P type, the channel region is lightly doped with N type, and the drain region is heavily doped with N type, the source is connected to low potential, and the drain is connected to high potential. When a positive voltage is applied to the gate electrode, the energy band of the channel region drops, and when the conduction band of the channel region drops below the valence band of the source re...

AI Technical Summary

Problems solved by technology

Due to the symmetrical distribution of the upper and lower gate electrodes, the electric field in the vertical direction is limited. When the channel thickness is small, line tunneling cannot occur, thus limiting the tunneling current.

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