Junctionless tunneling field effect transistor and formation method thereof

Abstract

The invention provides a junctionless tunneling field effect transistor and a formation method thereof. The junctionless tunneling field effect transistor includes the following components of: a substrate; a liner layer arranged on the substrate; a channel layer which is arranged on the liner layer and includes a channel region arranged in the middle as well as a source region and a drain region arranged at two sides of the channel region, wherein the channel region, the source region and the drain region have the same doping type; a source which coats on the upper surface, a side surface and the lower surface of the source region and coats the lower surface of the channel region, and is in Schottky contact with the channel region; a drain which coats the upper surface and a side surface of the drain region; and a gate stack structure which is located on the channel region. The junctionless tunneling field effect transistor has the advantages of simple structure, large tunneling current, capability of effectively suppressing a short channel effect and the like. The invention also provides a formation method of the junctionless tunneling field effect transistor.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a junctionless tunneling field effect transistor and a forming method thereof. Background technique [0002] Junctionless Tunneling Field Effect Transistor (JLTFET) is widely used because of its advantages of small off-state leakage, low sub-threshold swing, and effective overcoming short channel effect. [0003] The doping concentration of the channel of the existing JLTFET is relatively low, and the source region and the drain region have different types of doping concentration, and the source metal is only on the top or side of the source region. The JLTFET has small off-state leakage, low sub-threshold swing, and effectively overcomes the advantages of short channel effects. However, due to the difficulty in obtaining the ideal doping concentration in the existing JLTFET, the actually produced devices still have the problems of low on-state current and large subthresh...

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Problems solved by technology

However, due to the difficulty in obtaining the ideal doping concentration in the existing JLTFET, the actual production of the device still has the problems of low on-state current and large sub-threshold swing.

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