A lattice mismatched multijunction solar cell

A solar cell, lattice mismatch technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems affecting solar cell efficiency, dislocations, etc.

Active Publication Date: 2020-11-17
YANGZHOU CHANGELIGHT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the present invention provides a lattice-mismatched solar cell to solve the problem that in the prior art, when a p-type (Al)InGaAs layer of C is grown on a lattice-mismatched subcell, dislocation defects are easily generated, which affects the solar cell. The problem of efficiency

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  • A lattice mismatched multijunction solar cell
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Embodiment Construction

[0036] As mentioned in the background technology section, the p-type doped functional layer in the tunnel junction in the prior art usually adopts the p-type (Al) InGaAs layer doped with C, however, the p-type (Al) InGaAs layer doped with C in the prior art ) InGaAs is prone to dislocation defects, which affect the efficiency of solar cells.

[0037] The inventor finds that the root cause of the above phenomenon is:

[0038] At present, the lattice-matched triple-junction battery that has been commercialized on a large scale focuses on the complete adaptation of the lattice constants between the materials of each sub-cell, so that the bandgap combination of its sub-cells is 1.89eV / 1.41eV / 0.67eV, resulting in the bandgap of the medium-sized battery. The difference between the gap (1.41eV, InGaAs) and the bottom cell (0.67eV, Ge) is large, so that the photocurrent of the bottom cell is too large, and the infrared part of the solar spectrum beyond 880nm is not fully utilized, whi...

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Abstract

The invention provides a lattice mismatch multi-junction solar cell. The lattice mismatch multi-junction solar cell comprises at least one crystal lattice mismatch sub cell and a tunneling junction grown on the crystal lattice mismatch sub cell; the P-type doping functional layer of the tunneling junction is a C-doped p-type AlxGaAs layer / Zn-doped p type AlyInGaAs layer / C-doped p-type AlxGaAs layer, or after the C-doped p-type AlxGaAs layer / Zn-doped p type AlyInGaAs layer alternately grow for N periods, and then the superlattice structure of the C-doped p-type AlxGaAs is grown. A new structureis adopted to replace the C-doped p type (Al) InGaAs layer in the prior art, so that the problem of InGaAs lattice mismatch with the body material in the solar cell caused by suppression of In component access due to the doped reaction source halogen in the p type AlyInGaAs, so that the photoelectric conversion efficiency of the solar cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a lattice-mismatched multi-junction solar cell. Background technique [0002] Solar cells convert solar energy directly into electricity and are the most efficient form of clean energy. Gallium arsenide triple-junction solar cells have completely replaced Si solar cells and become The main power source of the space vehicle. Among them, the conversion efficiency of gallium arsenide triple-junction solar cells represented by GaInP / InGaAs / Ge has exceeded 30% under the space spectrum (AM0), and the conversion efficiency has exceeded 40% under the condition of high concentration on the ground. Efficiency leader. [0003] Solar cells in the prior art are classified into lattice-matched solar cells and lattice-mismatched solar cells, and lattice-mismatched solar cells are solar cells including lattice-mismatched subcells. It is known that lattice-matched tunnel junctio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0304H01L31/0352H01L31/0687B82Y40/00
CPCB82Y40/00H01L31/03042H01L31/03046H01L31/035209H01L31/035272H01L31/0687Y02E10/544
Inventor 吴真龙张海林张策吴志明
Owner YANGZHOU CHANGELIGHT
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