Thin film transistor, manufacture method thereof, array substrate and display device

A technology of thin film transistor and substrate substrate, which is applied in the fields of thin film transistor and its manufacturing method, array substrate and display device, can solve the problems of small on-state current and low charging rate of TFT, so as to increase on-state current and improve charging rate effect

Active Publication Date: 2016-08-10
BOE TECH GRP CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problem of small on-state current and low charging rate of TFT, the present i

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  • Thin film transistor, manufacture method thereof, array substrate and display device
  • Thin film transistor, manufacture method thereof, array substrate and display device
  • Thin film transistor, manufacture method thereof, array substrate and display device

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[0083] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. . Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0084] Please refer to figure 1 , Which shows a schematic structural diagram of a thin film transistor 00 provided by an embodiment of the present invention, see figure 1 , The thin film transistor 00 includes: a base substrate 001. The base substrate 001 may be a transparent substrate, which specifically may be a substrate made of a light-guiding and non-metallic material with certain sturdiness, such as glass, quartz, and tra...

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Abstract

The invention discloses a thin film transistor, a manufacture method thereof, an array substrate and a display device, which belongs to the technical field of display. The thin film transistor comprises a substrate. A gate is formed on the substrate. A gate insulating layer is formed on the substrate with the gate. An active layer and a source drain metal pattern are formed on the substrate with the gate insulating layer. The active layer comprises a polysilicon pattern and an amorphous silicon pattern on the polysilicon pattern. The source drain metal pattern comprises a source and a drain. The source contacts the polysilicon pattern and the amorphous silicon pattern. The drain contacts the polysilicon pattern and the amorphous silicon pattern. According to the invention, the problems of small open current and low charging rate of the thin film transistor are solved; the open current of the thin film transistor is increased; and the charging rate is improved. The thin film transistor, the manufacture method thereof, the array substrate and the display device are applied to the array substrate.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a manufacturing method thereof, an array substrate, and a display device. Background technique [0002] In the display industry, a thin film transistor (English: Thin Film Transistor; TFT for short) is formed in a pixel unit of a display device, and the TFT can drive the pixel unit to realize image display. [0003] In the related art, the TFT can be a-Si (Chinese: amorphous silicon) TFT, and the a-Si TFT includes: a substrate, a gate, a gate insulating layer, an active layer, and a source-drain sequentially formed on the substrate. An electrode metal pattern, wherein the active layer includes an a-Si layer formed of a-Si material, the source and drain metal patterns include: a source and a drain, the source and the drain are respectively in contact with the a-Si layer, and the drain The electrode is also in contact with the pixel electrode in the pix...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L29/417H01L21/336H01L21/28H01L27/12
CPCH01L27/1229H01L29/41733H01L29/66765H01L29/78669H01L29/78678H01L29/78696H01L29/458H01L29/78609H01L21/223H01L27/124H01L27/1288H01L29/78618
Inventor 白金超郭会斌丁向前王静
Owner BOE TECH GRP CO LTD
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