265 results about "Oxygen diffusion" patented technology

Provided is a two-step ALD deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a high dielectric constant, high density, large bandgap and good thermal stability. Erbium oxide can act as a barrier against oxygen diffusion, which can lead to increasing an effective oxide thickness of the gate dielectric and preventing hafnium-silicon reactions that may lead to higher leakage current.

Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.

A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.

A process is disclosed of forming metal replacement gates for NMOS and PMOS transistors with oxygen in the PMOS metal gates and metal atom enrichment in the NMOS gates such that the PMOS gates have effective work functions above 4.85 eV and the NMOS gates have effective work functions below 4.25 eV. Metal work function layers in both the NMOS and PMOS gates are oxidized to increase their effective work functions to the desired PMOS range. An oxygen diffusion blocking layer is formed over the PMOS gate and an oxygen getter is formed over the NMOS gates. A getter anneal extracts the oxygen from the NMOS work function layers and adds metal atom enrichment to the NMOS work function layers, reducing their effective work functions to the desired NMOS range. Processes and materials for the metal work function layers, the oxidation process and oxygen gettering are disclosed.

A shallow trench isolation structure is formed in a semiconductor substrate adjacent to an active semiconductor region. A selective self-assembling oxygen barrier layer is formed on the surface of the shallow trench isolation structure that includes a dielectric oxide material. The formation of the selective self-assembling oxygen barrier layer is selective in that it is not formed on the surface the active semiconductor region having a semiconductor surface. The selective self-assembling oxygen barrier layer is a self-assembled monomer layer of a chemical which is a derivative of alkylsilanes including at least one alkylene moiety. The silicon containing portion of the chemical forms polysiloxane, which is bonded to surface silanol groups via Si—O—Si bonds. The monolayer of the chemical is the selective self-assembling oxygen barrier layer that prevents diffusion of oxygen to a high dielectric constant material layer that is subsequently deposited as a gate dielectric.

The present invention provides a method for depositing a dielectric stack comprising forming a dielectric layer atop a substrate, the dielectric layer comprising at least oxygen and silicon atoms; forming a layer of metal atoms atop the dielectric layer within a non-oxidizing atmosphere, wherein the layer of metal atoms has a thickness of less than about 15 Å; forming an oxygen diffusion barrier atop the layer of metal atoms, wherein the non-oxidizing atmosphere is maintained; forming a gate conductor atop the oxygen diffusion barrier; and annealing the layer of metal atoms and the dielectric layer, wherein the layer of metal atoms reacts with the dielectric layer to provide a continuous metal oxide layer having a dielectric constant ranging from about 25 to about 30 and a thickness less than about 15 Å.

A resistive memory device and a method for manufacturing the same are disclosed. The resistive memory device includes a lower electrode formed over a substrate, a resistive layer disposed over the lower electrode, an upper electrode formed over the resistive layer, and an oxygen-diffusion barrier pattern provided in an interface between the resistive layer and the upper electrode. The above-described resistive memory device and a method for manufacturing the same may prevent the out diffusion of oxygen in the interface of the upper electrode to avoid set-stuck phenomenon occurring upon the operation of the resistive memory device, thereby improving the endurance of the resistive memory device.

A liner for bottle caps and method for controlling the oxygen diffusion rate of closures. The oxygen barrier layer of a laminated cap liner or seal over cork stopper for a container closure, such as a metal foil or PVDC, is provided with perforations, formed, for example, by laser. Perforations permit an increased oxygen diffusion rate as compared to conventional barrier layers having imperforate metal foil, while permitting the liner or seal to retain a lower oxygen diffusion rate as compared to other conventional liners having no oxygen barrier. The oxygen diffusion rate can be further adjusted by changing the cumulative area of perforations in the metal foil of the barrier laminate, by varying the number of perforations, or by varying the size of the individual perforations.

According to one exemplary embodiment, a method for forming a field-effect transistor on a substrate, where the substrate includes a high-k dielectric layer situated over the substrate and a gate electrode layer situated over the high-k dielectric layer, comprises a step of etching the gate electrode layer and the high-k dielectric layer to form a gate stack, where the gate stack comprises a high-k dielectric segment situated over the substrate and a gate electrode segment situated over the high-k dielectric segment. According to this exemplary embodiment, the method further comprises performing a nitridation process on the gate stack. The nitridation process can be performed by, for example, utilizing a plasma to nitridate sidewalls of the gate stack, where the plasma comprises nitrogen. The nitridation process can cause nitrogen to enter the high-k dielectric segment and form an oxygen diffusion barrier in the high-k dielectric segment, for example.

The present invention provides a method of fabricating a silicon fin useful in preparing FinFET type semiconductor structures. The method is particularly useful for creating fins with a width and smoothness appropriate for sub-50 nm type gates. The method begins with a silicon fin prepared by lithographic means from an SOI type structure such that the fin is larger in dimension, particularly width, than is desired in the final fin. If desired the silicon fin can include a nitride cap. A conformal diffusion layer, such as of silicon dioxide, is then deposited onto the fin and silicon dioxide substrate. A PECVD deposition using TEOS gas is one method to deposit the diffusion layer. The coated fin is then heated and exposed to oxygen. The oxygen diffuses through the diffusion layer and converts a portion of the silicon material to silicon dioxide. This oxidation continues until a desired amount of silicon material is converted to SiO₂ such that the remaining silicon has the desired dimensions. The silicon fin is then exposed through wet etching steps that remove the silicon dioxide coating.

The invention discloses an unsymmetrical lithia battery. The battery takes lithium peroxide as a positive pole active material, lithium peroxide and a catalyst which are uniformly mixed are loaded on a porous carbon material so as to form a positive pole, the material capable of realizing deintercalation of lithium ions is taken a negative pole, and the weight content of lithium peroxide is 1-50% in a composite material. According to the invention, the discharging product lithium peroxide of the traditional lithia battery is directly used as the positive pole active material, the pole material of the traditional lithium ion battery, which is capable of realizing deintercalation of lithium ions, is taken as the negative pole, the damage of negative pole lithium dendrites of a lithia battery to the battery is solved, and meanwhile, the controllable distribution of the discharging product is realized, an unblocked oxygen diffusion channel is guaranteed, and the charge-discharge capacity and cycle performance of the lithia battery are effectively improved.

An automobile or vehicle having a high efficiency solar control system is provided. The automobile may have a window defined by a sheet of glass and a film mounted to its exterior side. The film may reflect solar radiation in the near and mid infrared ranges yet allow high transmission of light in the visible range such that the occupants of the automobile may view his/her surroundings through the window. The film may have a layer of silver which reflects the solar radiation in the near and mid infrared ranges. Since the silver is susceptible to oxidation and turns the silver into a black body which absorbs the near and mid infrared radiation, the film may be designed to slow the rate of oxidation of the silver layer to an acceptable level. The silver layer may be sandwiched between the glass which does not allow oxygen to diffuse there through and reach the layer of silver and a stack of sacrificial layers having a certain thickness which slows down the rate of oxygen diffusion to an acceptable level.

A compound metal comprising MO_xN_y which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the MO_xN_y compound metal. Furthermore, the MO_xN_y metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000° C. allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (PMOS) device. In the above formula, M is a metal selected from Group IVB, VB, VIB or VIIB of the Periodic Table of Elements, x is from about 5 to about 40 atomic % and y is from about 5 to about 40 atomic %.

There is provided a method of manufacturing a thin film device and a thin film device manufactured using the same. The method includes forming a sacrificial layer using a first oxide having a perovskite structure on a preliminary substrate; forming an electrode layer using a second oxide having a perovskite structure on the sacrificial layer; forming a thin film laminate on the electrode layer; bonding a permanent substrate onto the thin film laminate; decomposing the sacrificial layer by irradiating a laser onto the preliminary substrate; and separating the preliminary substrate from the electrode layer. During a laser lift-off process, degradation of properties caused by oxygen diffusion can be prevented. Since the electrode layer has thermal conductivity lower than an existing metal electrode, heat emission can be considerably reduced and the sacrificial layer can be easily decomposed by heat accumulation. Therefore, a thin film device having excellent properties can be manufactured.

The present invention provides a process for thermosetting pitch fibers in reduced times, at low concentrations of oxygen and at higher temperatures than previously possible. Additionally, the present invention provides a pitch fiber which has an oxygen diffusion rate to the center of the fiber which is competitive with the rate of oxidation at the fiber's surface. Further, the present invention provides a high density pitch fiber batt which thermosets without loss of fiber structure.

Method of forming a semiconductor device includes providing a substrate with defined NMOS and PMOS device regions and an interface layer on the NMOS and PMOS device regions, depositing a high-k film on the interface layer, depositing a first cap layer on the high-k film, and removing the first cap layer from the high-k film in the PMOS device region. The method further includes depositing a second cap layer on the first cap layer in the NMOS device region and on the high-k film in the PMOS device region, performing a heat-treating process to diffuse a first chemical element into the high-k film in the NMOS device region and to reduce or eliminate the interface layer by oxygen diffusion from the interface layer into the second cap layer, removing the first and second cap layers from the high-k film, and depositing a gate electrode film over the high-k film.