669 results about "Bi layered" patented technology

Provided is a two-step ALD deposition process for forming a gate dielectric involving an erbium oxide layer deposition followed by a hafnium oxide layer deposition. Hafnium oxide can provide a high dielectric constant, high density, large bandgap and good thermal stability. Erbium oxide can act as a barrier against oxygen diffusion, which can lead to increasing an effective oxide thickness of the gate dielectric and preventing hafnium-silicon reactions that may lead to higher leakage current.

A dosage form that provides a controlled release of at least two different active agents is provided. Particular embodiments include a dosage form that provides therapeutically effective levels of a first active agent and a second active agent in a mammal for an extended period of time following oral administration. An osmotic device containing a bi-layered core is provided. The osmotic device provides a dual controlled release of both drugs from the core. The layers of the core are in stacked, substantially concentric or substantially eccentric arrangement.

A grid-top floor tile for outdoor use includes a polymer tile having a grid-type top surface with multiple levels, such as a bi-level surface having an upper lattice and a lower lattice oriented generally transverse to the upper lattice. The multiple levels of the surface are preferably integrally formed with one another and provide drainage gaps therethrough. In a bi-level surface configuration, the lower lattice has a top surface below a top surface of the upper lattice, so as to draw residual moisture below the top surface of the upper lattice. The tile further includes a support structure, configured to support the tile on a support surface and provide drainage pathways beneath the top surface. The tile still further comprises various reinforcement members on each of the loop and pin connectors used to interlock the tiles when forming a flooring assembly.

A composite hard mask is disclosed that prevents build up of metal etch residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ shape integrity is substantially improved. The hard mask has a lower non-magnetic spacer, a middle conductive layer, and an upper sacrificial dielectric layer. The non-magnetic spacer serves as an etch stop during a pattern transfer with fluorocarbon plasma through the conductive layer. A photoresist pattern is transferred through the dielectric layer with a first fluorocarbon etch. Then the photoresist is removed and a second fluorocarbon etch transfers the pattern through the conductive layer. The dielectric layer protects the top surface of the conductive layer during the second fluorocarbon etch and during a substantial portion of a third RIE step with a gas comprised of C, H, and O that transfers the pattern through the underlying MTJ layers.

Embodiments of the invention contemplate forming an electrochemical device and device components, such as a battery cell or supercapacitor, using thin-film or layer deposition processes and other related methods for forming the same. In one embodiment, a battery bi-layer cell is provided. The battery bi-layer cell comprises an anode structure comprising a conductive collector substrate, a plurality of pockets formed on the conductive collector substrate by conductive microstructures comprising a plurality of columnar projections, and an anodically active powder deposited in and over the plurality of pockets, an insulative separator layer formed over the plurality of pockets, and a cathode structure joined over the insulative separator.

A highly specific and versatile surface chemistry for immobilization of amine-terminated probes is disclosed. A bi-layered polymer thin film serves as the platform for coupling the probes, which are preferably oligonucleotides. The process involves sequentially coating a substrate with polyamine and polyacid anhydride. Hydrolyzed polyacid anhydride groups may be converted to non-hydrolyzed groups at about 100° C. prior to probe attachment. The process of coating the substrate requires no harsh chemical pretreatment of substrates such as RCA or Piranha cleaning. In addition, simple thermal activation of the anhydride groups has a low requirement for storage, leading to a long shelf life of modified surfaces. The disclosed surface chemistry is especially compatible with microfabrication processes, and its effective application to magnetic biosensors is demonstrated.

A porous bi-layer separator composed of a first layer with a contacting array of non-conducting particles overlaid with a second layer of a microporous polymer layer, may be fabricated on the electrode surface of the anode of a lithium-ion battery to form an integral electrode-separator construction. The bi-layer separator may prevent development of a direct electronic path between the anode and cathode of the battery while accommodating electrolyte solution and enabling passage of lithium ions. Such an integral separator should be mechanically robust and tolerant of elevated temperatures. Exemplary bi-layer separators may be fabricated by sequential deposition of solvent-containing slurries and polymer solutions with subsequent controlled evaporation of solvent. The elevated temperature performance of lithium-ion battery cells incorporating such integral electrode-bi-layer separators was demonstrated to exceed the performance of similar cells using commercial and experimental single layer polymer separators.

The present disclosure sets forth battery components for secondary and / or traction batteries. Described herein are new solid-state lithium (Li) conducting electrolytes including monolithic, single layer, and bi-layer solid-state sulfide-based lithium ion (Li+) conducting catholytes or electrolytes. These solid-state ion conductors have particular chemical compositions which are arranged and / or bonded through both crystalline and amorphous bonds. Also provided herein are methods of making these solid-state sulfide-based lithium ion conductors including new annealing methods. These ion conductors are useful, for example, as membrane separators in rechargeable batteries.

A mask structure for fabricating a write pole for a perpendicular write head. The mask structure includes a first and second hard mask structures separated by an image transfer layer, such as DURAMIDE®. The first mask structure may be a bi-layer mask structure that functions as a CMP stop as well as a hard mask for ion milling. The first hard mask is chosen to have a desired resistance to removal by ion milling to maintain excellent track width control during an ion milling process used to form the write pole. Therefore, the first hard mask may be comprises of two layers selected from the group consisting of Rh, alumina, and diamond like carbon (DLC). The second hard mask is constructed of a material that functions as a bottom antireflective coating as well as a hard mask.

Disclosed are biomedical scaffolds that may be used, for example, for treatment of bone diseases and bone repair. Methods of preparing such scaffolds are also disclosed. These scaffolds permit nutrient and ion flow such that bone regeneration in the area surrounding the scaffold is promoted. Also disclosed are kits that include the scaffolds set forth herein.

A self-assembling nanoparticle drug delivery system for the delivery of drugs including peptides, proteins, nucleic acids or synthetic chemical drugs is provided. The self-assembling nanoparticle drug delivery system described herein includes viral capsid proteins, such as Hepatitis B Virus core protein, encapsulating the drug, a lipid bi-layer envelope and targeting or facilitating molecules anchored in the lipid bilayer. A method for construction of the self-assembling nanocparticle drug delivery system is also provided.

A high efficiency thin-film photovoltaic module is formed on a substrate. The photovoltaic module includes a plurality of stripe shaped photovoltaic cells electrically coupled to each other and physically disposed in parallel to the length one next to another across the width. Each cell includes a barrier material overlying the surface and a first electrode overlying the barrier material. Each cell further includes an absorber formed overlying the first electrode. The absorber includes a copper gallium indium diselenide compound material characterized by an energy band-gap of about 1 eV to 1.1 eV. Each cell additionally includes a buffer material overlying the absorber and a bi-layer zinc oxide material comprising a high resistivity transparent layer overlying the buffer material and a low resistivity transparent layer overlying the high resistivity transparent layer.

A perpendicular write head having a wrap around trailing shield for reducing stray field writing and adjacent track interference. A method for constructing such a write head allows for excellent control of side shield gap thickness and trailing shield gap thickness, and allows the ratio of side gap to trailing gap thicknesses to be maintained at about two to one as desired. The method includes depositing forming a write pole by constructing a mask which may include a bi-layer hard mask, and then ion milling to form the write pole. Once the write pole has been formed, a layer of alumina or some other non-magnetic material can be conformally deposited. A reactive ion mill (RIM) can be performed to open up the top of the write pole (remove the horizontally disposed portions of the alumina layer). Then, a second layer of alumina or some other non-magnetic material can be deposited, and the write pole can be plated. The thickness of the side shield gaps is defined by the sum of the final thicknesses of the first and second alumina layers, while the thickness of the first magnetic layer defines the thickness of the trailing shield gap.

The present invention is directed to bi-layer tablets comprising at least one estrogen in a first layer and a therapeutic agent in a second layer, and processes for their preparation.

A method of making porous shapes from unit structures such as beads involves coating the beads with two or more layers of material deposited such that it forms an energetic material. These bi-layer energetic materials are formed from a variety of materials including, but not limited to: Ti & B, Zr & B, Hf & B, Ti & C, Zr & C, Hf & C, Ti & Si, Zr & Si, Nb & Si, Ni & Al, Zr & Al, or Pd & Al, all of which can be deposited from vapor. Pressure is applied to prevent the components from moving and the solid-state reaction between the alternating layers produces exothermic heat. Heat from the reaction alone or in conjunction of an applied brazing compound joins the beads forming a porous shape that is desired. The reaction in the materials may be activated with a small pulse of local energy that can be applied using optical, electrical, or thermal sources. Common examples include an electrical pulse, spark, hot filament, a laser beam, etc. The method reduces energy consumption and the need for specialized equipment. The reactive materials and optional brazing material are preferably applied in a fluidized CVD furnace.

A bi-layer pseudo-spin field-effect transistor (BiSFET) is disclosed. The BiSFET includes a first and second conduction layers separated by a tunnel dielectric. The BiSFET transistor also includes a first gate separated from the first conduction layer by an insulating dielectric layer, and a second gate separated from the second conduction layer by an insulating layer. These conduction layers may be composed of graphene. The voltages applied to the first and / or second gates can control the peak current and associated voltage value for current flow between top and bottom conduction channels, and interlayer current voltage characteristic exhibiting negative differential resistance. BiSFETs may be used to make a variety of logic gates. A clocked power supply scheme may be used to facilitate BiSFET-based logic.

A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure.

An electronic component device having a first sealing frame formed on a main substrate and a second sealing frame formed on a cover substrate, both of which are composed of a Ni film. A bonding section bonds the first sealing frame to the second sealing frame. For example, a Bi layer is formed on the first sealing frame and an Au layer is formed on the second sealing frame, and then the first sealing frame and the second sealing frame are heated at a temperature of 300° C. for 10 seconds while applying pressure in the direction in which the first sealing frame and the second sealing frame are close contact with each other to form the bonding section. The bonding section is constituted by a mixed layer predominantly composed of a mixed alloy of a Ni—Bi—Au ternary alloy and Au2Bi.

This invention discloses a method for preparing phenolic hydroxyl-containing polyimide adhesive. The method comprises: (1) reacting phenolic hydroxyl-containing aromatic diamine, or its mixture with other aromatic diamines, with aromatic dianhydride at a mol ratio of 1:1 in strongly polar non-proton organic solvent at 0-10 deg.C for 4-8 h to obtain uniform, transparent and viscose polyhydroxyamic acid solution; (2) adding azeotropic dehydrator in nitrogen atmosphere, heating, performing imidization reaction under refluxing and dehydration at 120-160 deg.C for 1-6 h, and cooling to room temperature to obtain phenolic hydroxyl-containing polyimide adhesive. The volume ratio of azeotropic dehydrator to strongly polar non-proton organic solvent is 1 :( 1-5). The method has such advantages as easy operation, no special requirement for equipment, and high product quality. The phenolic hydroxyl-containing polyimide adhesive has such advantages as short adhesion and curing time, low energy consumption, and high adhesiveness to copper foil and polyimide thin film, and can be used to produce bi-layer flexible printed circuit boards.

Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

The invention relates to an optimization method in the field of power system automation, in particular to a layered optimization method of a regional distribution network comprising a micro-grid. The method includes the following steps: (1) building a micro-grid and distribution network combined dispatching model; (2) building an efficiency-maximizing secondary dispatching model of the micro-grid; (3) optimizing the two dispatching models. According to the method, the micro-grid is taken as a controllable unit capable of dispatching independently; through coordinated dispatching of a controllable distributed power supply on the distribution network side, the micro-grid and the distribution network and bi-layer dispatching control of economic dispatch of distributed energy resources inside the micro-grid, the distributed energy resources are used in a maximized manner internally, the regional distribution network power supply and loads are dispatched optimally externally, and acceptance capability of the distraction network to the distributed power supply can be effectively improved.

High-capacity capacitors and gate insulators exhibiting moderately high dielectric constants with surprisingly low leakage using amorphous or low temperature films of perovskite type oxides including a titanate system material such as barium titanate, strontium titanate, barium strontium titanate (BST), lead titanate, lead zirconate titanate, lead lanthanum zirconate titanate, barium lanthanum titanate, a niobate, aluminate or tantalate system material such as lead magnesium niobate, lithium niobate lithium tantalate, potassium niobate and potassium tantalum niobate, a tungsten-bronze system material such as barium strontium niobate, lead barium niobate, barium titanium niobate, and Bi-layered perovskite system material such as strontium bismuth tantalate, bismuth titanate deposited directly on a silicon surface at temperatures about 450° C. or less.

A paving block that closely resembles a used mined cobblestone. The blocks are manufactured by a bi-layer concept that is subjected to processes that cause the layers to structurally integrate. The process and composition permit the mass production of blocks having independent top topographies that emulate the surfaces of original cobblestones and with a comparable strength.

The disclosed subject matter provides a method and structure for obtaining ultra-low surface recombination velocities from highly efficient surface passivation in crystalline silicon substrate-based solar cells by utilizing a bi-layer passivation scheme which also works as an efficient ARC. The bi-layer passivation consists of a first thin layer of wet chemical oxide or a thin hydrogenated amorphous silicon layer. A second layer of amorphous hydrogenated silicon nitride film is deposited on top of the wet chemical oxide or amorphous silicon film. This deposition is then followed by annealing to further enhance the surface passivation.

An LED device that includes electrodes patterned over a substrate; the pattern forming several first electrodes separated by inter-electrode spacers. One or more light-emitting layers are formed over the first electrodes. A patterned conductive layer is formed over the one or more light-emitting layers and over the first electrodes in regions external to the inter-electrode spacers. A continuous unpatterned conductive layer is formed over both the patterned conductive layer and the inter-electrode spacers. Finally, a combination of the patterned and continuous unpatterned conductive layers form a single, bi-layered, electrically continuous second electrode.