A junctionless field effect transistor

Abstract

The invention provides a non-junction field-effect transistor. The non-junction field-effect transistor includes a source region and a drain region, wherein the source region and the drain region are arranged at two sides of a channel region in a central symmetry manner; the channel region, the source region and the drain region are the same in the doping type and the doping concentration; the channel region is provided with a gate dielectric layer and a gate electrode which is arranged on the gate dielectric layer; the source region and the drain region are respectively provided with a source electrode dielectric layer, a source electrode, a source end side electrode, a drain electrode dielectric layer, a drain electrode and a drain end side electrode; isolating dielectric layers isolate the source electrode from the gate electrode; and the work functions of the source electrode and the drain electrode are the work functions which are determined according to the doping type so as to form a conductive carrier layer on the surface of the source region and the surface of the drain region. The non-junction field-effect transistor can accumulate the corresponding type of carriers on the source region and the drain region to perform current transportation by adjusting the metal work functions of the source electrode and the drain electrode. The structure of the non-junction field-effect transistor can restrain the influence of rough edge of a technological fluctuation line on the device performance, can maintain the current driving capability of a non-junction device, and can optimize the subthreshold feature of the non-junction device so as to improve the stability of device.

Description

Technical field [0001] This application relates to the technical field of semiconductor integrated circuit devices, in particular to a junctionless field effect transistor. Background technique [0002] Under the guidance of Moore's Law in the integrated circuit industry, device sizes are getting smaller and smaller. However, as the size of the device continues to shrink, the performance of the device is increasingly affected by effects such as threshold voltage drift and increase in leakage current. Therefore, a variety of new device structures have been proposed to improve the gate control ability to suppress short channel defects. effect. However, with the further reduction of devices, especially after the device size is reduced to sub-10 nanometers in the next few years, the precision control of doping becomes extremely important and challenging; on the one hand, the control precision of the channel atom doping number needs to reach The units position avoids large fluctuati...

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Problems solved by technology

[0004] The present application provides a junctionless field effect transistor to solve the problem of poor stability of junctionless field effect transistors in the prior art

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