A kind of thin film structure transparent electrode and preparation method thereof

A technology of transparent electrodes and thin-film structures, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems affecting the quality of contact and the increase of contact interface defects, and achieve the effects of improving work efficiency, excellent performance, good quality, and high melting point
CN102916103BInactive Publication Date: 2017-05-03SUN YAT SEN UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
SUN YAT SEN UNIV
Publication Date
2017-05-03
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention discloses a thin film structure transparent electrode and a preparation method thereof. The thin film structure transparent electrode comprises a metal iridium in Schottky contact with an n-type semiconductor or iridium oxide in ohmic contact with a p-type semiconductor; a metal nickel is added into the metal iridium to form a metal iridium-metal nickel-metal iridium product; and nickel oxide is added into the iridium oxide to form an iridium oxide-nickel oxide-iridium oxide product. The thin film structure transparent electrode has the advantages of large metal work function, high melting point, good heat stability, good light transmittance, strong corrosion resistance, excellent resistance to oxidation and the like.
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Description

technical field

[0001] The invention relates to a thin film structure transparent electrode and a preparation method thereof. Background technique

[0002] Due to its excellent photoelectric properties, transparent conductive films have important applications in the fields of optical display devices, photodetection devices, solar cells, touch panels, and electrochromic devices. For light display devices, such as light-emitting diodes, the use of thin-film transparent electrodes can increase the light extraction efficiency and help improve the performance of light-emitting diodes; for photodetection devices, thin-film transparent electrodes can increase the amount of light received by the device and improve the sensitivity of the detector .

[0003] Group III nitrides belong to the third generation of semiconductors and are typical wide bandgap compound semiconductor materials. GaN-based materials (including its binary compounds GaN, InN, and AlN, ternary compounds InGaN, A...

Claims

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