U type FinFET NOR gate structure and manufacture method thereof

Abstract

The invention relates to a U type FinFET NOR gate structure and a manufacture method thereof. The structure comprises a substrate, a bit line, a first fin, a second fin, a third fin, source-drain regions and isolation regions, wherein the bit line is arranged in the top area of the substrate and formed by a carrier doped zone; the first fin is placed on the substrate, and the lower half portion of the first fin is surrounded by a first word line to form a first channel region; the second fin is placed on the substrate, and the lower half portion of the second fin is surrounded by a second word line to form a second channel region; the third fin is placed on the substrate, and the lower half portion of the third fin is surrounded by a third word line to form a third channel region; areas, not surrounded by the first, second and third word lines, at the tops of the first, second and third fins include the source-drain regions of the same type of the bit line respectively; and the isolation regions fill the areas among the first, second and third word lines to isolate the word lines from one another. According to the invention, the NOR gate device structure based on the U type FinFET is provided, the grid length of the device is not limited by the footprint size, the problem caused by the short channel effects is effectively solved.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing a FinFET. technical background [0002] Moore's Law states that the number of transistors that can be accommodated on an integrated circuit doubles every 18 months, and the performance also doubles at the same time. At present, with the development of integrated circuit technology and technology, devices such as diodes, MOSFETs, and FinFETs have appeared successively, and the size of nodes has been continuously reduced. However, since 2011, silicon transistors have approached the atomic level and reached the physical limit. Due to the natural properties of this material, in addition to the short-channel effect, the quantum effect of the device also has a great impact on the performance of the device. The speed and performance of silicon transistors are hard to break through. Therefore, how to greatly improve the performance ...

AI Technical Summary

Problems solved by technology

[0003] The invention provides a U-shaped FinFET NOR gate device structure and its manufacturing method. A new device structure is proposed on the basis of the existing FinFET process, so that the gate length of the device is not limited by the footprint size, effectively solving the problem of The problems caused by the short channel effect

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