1results about How to "Adjust threshold voltage" patented technology

A method for forming a semiconductor structure, the method comprising: providing a substrate comprising a first region and a second region, and forming an interlayer dielectric layer having a gate opening on the substrate; forming a shielding layer covering the gate opening of the second region and exposing the gate opening of the first region, the shielding layer occupying the gate opening of the second region, so that in the step of forming a first work function material layer in the gate opening of the first region, the first work function material layer is formed on the shielding layer, and in the process of removing the shielding layer and the first work function material layer on the shielding layer, the removal process window of the first work function material layer of the second region is larger, and it is not easy to have residues, and the removal efficiency is higher, which is beneficial to improve the yield; in addition, the removal process window of the shielding layer is larger, and it is not easy to have residues, the second work function layer can better adjust the threshold voltage of the transistor of the second region, reduce the parasitic capacitance in the transistor of the second region, so that the electrical performance of the semiconductor structure is better.