P-type metal oxide current blocking layer Ga2O3 vertical metal oxide semiconductor field effect transistor

A field-effect transistor, oxide semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as limiting device application, low breakdown voltage, and inability to form pn junctions in devices to improve breakdown. voltage, the effect of increasing the breakdown voltage

Active Publication Date: 2021-09-21
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since only n-type Ga 2 o 3 , while the p-type Ga 2 o 3 , so the pn junction cannot be formed in the device, so that the breakdown voltage is at a low level, and it is difficult to increase the breakdown voltage of the device by adjusting the doping concentration, which greatly limits the application of the device in the field of power devices

Method used

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  • P-type metal oxide current blocking layer Ga2O3 vertical metal oxide semiconductor field effect transistor
  • P-type metal oxide current blocking layer Ga2O3 vertical metal oxide semiconductor field effect transistor
  • P-type metal oxide current blocking layer Ga2O3 vertical metal oxide semiconductor field effect transistor

Examples

Experimental program
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Effect test

Embodiment 1

[0038] Example 1: The preparation thickness is 2um, and the doping concentration is 2×10 18 cm -3 The p-type tin oxide current blocking layer gallium oxide vertical MOSFET.

[0039] Step 1, growing a gallium oxide drift layer on a gallium oxide substrate, such as image 3 (a).

[0040] Select a Sn-doped gallium oxide (001) substrate and clean it; 2 Under the atmosphere, GaCl and O are introduced into the reaction chamber 2 , a silicon-doped gallium oxide drift layer was deposited on the substrate by hydride vapor phase epitaxy, where the proportion of GaCl to the mixed gas was 0.2, and the flow rate was 60slm;

[0041] Silicon ions are implanted in the gallium oxide drift layer by ion implantation technology, and the implantation dose is 5×10 13 cm -3 , with an implant energy of 600keV, and at 800°C N 2 Annealing for 1min under atmosphere to activate impurities;

[0042] For grown Ga 2 o 3 The drift layer is chemically mechanically polished to remove surface pits gen...

Embodiment 2

[0053] Example 2: The preparation thickness is 1um, and the doping concentration is 7×10 17 cm -3 The p-type nickel oxide current blocking layer gallium oxide vertical MOSFET.

[0054] Step 1, growing a gallium oxide drift layer on a gallium oxide substrate, such as image 3 (a).

[0055] 1.1) Select a Sn-doped gallium oxide (001) substrate and clean it; 2 Under the atmosphere, GaCl and O are introduced into the reaction chamber 2 , Deposit a silicon-doped gallium oxide drift layer on the substrate by hydride vapor phase epitaxy, where the ratio of GaCl to the mixed gas is 0.4, and the flow rate is 60slm;

[0056] 1.2) By ion implantation technology, silicon ions are implanted in the gallium oxide drift layer, and the implant dose is 6×10 13 cm -3 , with an implant energy of 600keV, and at 800°C N 2 Annealing for 1min under atmosphere to activate impurities;

[0057] 1.3) For grown Ga 2 o 3 The drift layer is chemically mechanically polished to remove surface pits ge...

Embodiment 3

[0071] Example 3: The preparation thickness is 0.2um, and the doping concentration is 2×10 17 cm -3 The p-type cuprous oxide current blocking layer gallium oxide vertical MOSFET.

[0072] Step A, growing a gallium oxide drift layer on a gallium oxide substrate, such as image 3 (a).

[0073] Select a Sn-doped gallium oxide (001) substrate and clean it; 2 Under the atmosphere, GaCl and O are introduced into the reaction chamber 2 , Deposit a silicon-doped gallium oxide drift layer on the substrate by hydride vapor phase epitaxy, where the ratio of GaCl to the mixed gas is 0.1, and the flow rate is 30slm;

[0074] Then, through ion implantation technology, silicon ions are implanted in the gallium oxide drift layer, and the implantation dose is 8×10 13 cm -3 , with an implant energy of 600keV, and at 800°C N 2 Annealing for 1min under atmosphere to activate impurities;

[0075] For grown Ga 2 o 3 The drift layer is chemically mechanically polished to remove surface pit...

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Abstract

The invention discloses a p-type metal oxide current barrier layer Ga2O3 vertical metal oxide semiconductor field effect transistor, which mainly solves the problem of low breakdown voltage caused by incapability of forming a pn junction in the prior art. The device comprises a drain electrode (1), a gallium oxide substrate (2), a gallium oxide drift layer (3), a gallium oxide channel layer (4), a gate dielectric layer (5) and a gate electrode (6) from bottom to top. Current blocking layers (7) are arranged on the two sides of the gallium oxide drift layer (3), a current aperture (8) is formed in the middle of the gallium oxide drift layer (3), and source electrodes (9) are arranged on the two sides of the gallium oxide channel layer (4) and the gate dielectric layer (5). The current blocking layer (7) is made of a p-type metal oxide material doped with boron element, and forms two heterojunctions with the gallium oxide drift layer (3) and the gallium oxide channel layer (4) respectively. The breakdown voltage of the device is greatly improved, and the device can be applied to high-power devices of industrial power and automobile power systems.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a Ga 2 o 3 Vertical Metal Oxide Semiconductor Field Effect Transistor (MOSFET) can be applied to high-power devices in industrial power and automotive power systems. Background technique [0002] With the continuous development of modern semiconductor power devices, the performance of traditional silicon-based devices has reached the theoretical limit. To break through this limit, materials with better characteristics are needed. Ga 2 o 3 It is a wide bandgap compound semiconductor material with a bandgap between 4.5 and 4.9eV, a Bliga figure of merit of more than 3000 and good and controllable n-type doping. Ga 2 o 3 The substrate can be easily grown by melting method, and the substrate has the advantages of high quality, large size and low cost. With its ultra-wide bandgap, Ga 2 o 3 The theoretical critical field strength is as high as 8MV / cm, which is mo...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/10H01L29/24H01L29/78H01L21/336
CPCH01L29/0615H01L29/1033H01L29/24H01L29/78H01L29/66969
Inventor 张春福黄钰文陈大正许育张进成郝跃
Owner XIDIAN UNIV
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